JPH0257961U - - Google Patents
Info
- Publication number
- JPH0257961U JPH0257961U JP13712888U JP13712888U JPH0257961U JP H0257961 U JPH0257961 U JP H0257961U JP 13712888 U JP13712888 U JP 13712888U JP 13712888 U JP13712888 U JP 13712888U JP H0257961 U JPH0257961 U JP H0257961U
- Authority
- JP
- Japan
- Prior art keywords
- quartz ampoule
- gallium
- quartz
- single crystal
- arsenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003708 ampul Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 238000001514 detection method Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13712888U JPH0257961U (enrdf_load_stackoverflow) | 1988-10-20 | 1988-10-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13712888U JPH0257961U (enrdf_load_stackoverflow) | 1988-10-20 | 1988-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0257961U true JPH0257961U (enrdf_load_stackoverflow) | 1990-04-26 |
Family
ID=31398271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13712888U Pending JPH0257961U (enrdf_load_stackoverflow) | 1988-10-20 | 1988-10-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0257961U (enrdf_load_stackoverflow) |
-
1988
- 1988-10-20 JP JP13712888U patent/JPH0257961U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MY107784A (en) | Method for growing multiple single crystals and apparatus for use therein | |
| GB1243930A (en) | Improvements in or relating to the production of monocrystals | |
| JPH0257961U (enrdf_load_stackoverflow) | ||
| JPH0357961U (enrdf_load_stackoverflow) | ||
| GB1430480A (en) | Methods of making single crystal intermetallic compounds semi conductors | |
| GB1408215A (en) | Production of monocrystalline gallium arsenide rods | |
| JPS5637293A (en) | Single crystal manufacturing refractory crucible | |
| JPS6452693A (en) | Production of crystal by sealed tube method | |
| JPS6445799A (en) | Production of cadmium telluride based crystal | |
| JPS6450518A (en) | Apparatus for liquid growth of semiconductor crystal | |
| JPS54121283A (en) | Manufacture of silicon single crystal by pulling method and apparatus therefor | |
| JPS6450519A (en) | Apparatus for liquid growth of semiconductor crystal | |
| JPH01102160U (enrdf_load_stackoverflow) | ||
| JP2575415B2 (ja) | 結晶成長の監視方法 | |
| JPS54141389A (en) | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible | |
| JPS57140398A (en) | Manufacture of crystal of rare earth element phosphate | |
| JPS6437488A (en) | Production of single crystal of compound semiconductor and device therefor | |
| BORODIN | PRODUCTION OF SAPPHIRE TUBES BY THE STEPANOV METHOD AT HIGH GROWTH RATES | |
| JPS54102967A (en) | Gas-phase crystal growth method for multiple semiconductor | |
| JPS5562881A (en) | Production of multicomponent semiconductor crystal | |
| JPS5676525A (en) | Liquid phase epitaxial growth device | |
| JPS63140071U (enrdf_load_stackoverflow) | ||
| JPS6279883U (enrdf_load_stackoverflow) | ||
| JPS57211713A (en) | Furnace for liquid epitaxial growth | |
| Pinkus et al. | A simple method for obtaining melting points of compounds reacting with moisture or oxygen |