JPS6452693A - Production of crystal by sealed tube method - Google Patents
Production of crystal by sealed tube methodInfo
- Publication number
- JPS6452693A JPS6452693A JP20938787A JP20938787A JPS6452693A JP S6452693 A JPS6452693 A JP S6452693A JP 20938787 A JP20938787 A JP 20938787A JP 20938787 A JP20938787 A JP 20938787A JP S6452693 A JPS6452693 A JP S6452693A
- Authority
- JP
- Japan
- Prior art keywords
- cock
- crucible
- crystal
- gas
- feedstock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain high-purity crystal by applying dry etching method to the crystal production process to eliminate trace impurities from the feedstock and crucible. CONSTITUTION:A quartz crucible 1 is packed with seed crystal 2 and Ga-As feedstock 3 and a crucible cap 4 is then welded at the cap sealing section 5. The crucible 1 is then put in an electric furnace 6 followed by exhaust with a vacuum pump 8 via a-cock 7. Thence, an etching gas is fed to the Ga-As feedstock 3 from a halogen gas ampule 11 through on-off operation of b-cock 9 and c-cock 10. Following the etching, the quartz crucible 1 is sealed at the sealing section 12 either in a vacuum or in an inert gas atmosphere brought to specified pressure by feeding said gas via d-cock 14 from a gas cylinder 13.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20938787A JPS6452693A (en) | 1987-08-25 | 1987-08-25 | Production of crystal by sealed tube method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20938787A JPS6452693A (en) | 1987-08-25 | 1987-08-25 | Production of crystal by sealed tube method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6452693A true JPS6452693A (en) | 1989-02-28 |
Family
ID=16572065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20938787A Pending JPS6452693A (en) | 1987-08-25 | 1987-08-25 | Production of crystal by sealed tube method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6452693A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0474787A (en) * | 1990-07-12 | 1992-03-10 | Kobe Steel Ltd | Method for cleaning apparatus for producing single crystal and production of single crystal |
JPH0492881A (en) * | 1990-08-03 | 1992-03-25 | Kobe Steel Ltd | Cleaning of container for producing single crystal and production of single crystal |
-
1987
- 1987-08-25 JP JP20938787A patent/JPS6452693A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0474787A (en) * | 1990-07-12 | 1992-03-10 | Kobe Steel Ltd | Method for cleaning apparatus for producing single crystal and production of single crystal |
JPH0492881A (en) * | 1990-08-03 | 1992-03-25 | Kobe Steel Ltd | Cleaning of container for producing single crystal and production of single crystal |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE8602869L (en) | SET AND DEVICE FOR CLEANING ARGON | |
MY107784A (en) | Method for growing multiple single crystals and apparatus for use therein | |
GB1103329A (en) | Refining of silicon | |
JPS6452693A (en) | Production of crystal by sealed tube method | |
JPS55104044A (en) | Evacuation method of fluorescent lamp | |
EP0244874A3 (en) | Luminescent material, process for producing it and luminescent semiconductor device using it | |
EP0137315A3 (en) | Process and apparatus for the manufacture of high-purity alloys | |
JPS54139478A (en) | Pressing/heating process method for semiconductor substrate | |
JPH0257961U (en) | ||
JPH0357961U (en) | ||
UA16722A1 (en) | Method for making alkali halide crystals | |
KR890005825A (en) | Dendrite Web Silicon Crystal Growth Method | |
JPS6487598A (en) | Treatment of raw material for compound semiconductor polycrystal | |
JPS54121283A (en) | Manufacture of silicon single crystal by pulling method and apparatus therefor | |
SU1702717A1 (en) | Method of removing waste gases from aluminium cell | |
JPS5637299A (en) | Sapphire synthesizing method by thermit reaction | |
JPS61132596A (en) | Apparatus for producing compound semiconductor single crystal | |
JPS5571693A (en) | Production of single crystal | |
JPS539082A (en) | Gas exhausting device for fluorescent lamp | |
JPS525537A (en) | Method of producing glass for light fibers | |
JPS6442386A (en) | Process and apparatus for producing single crystal | |
Wu et al. | Decomposition of high purity palladium by vaporization-microwave heating-autoclave process | |
TH6208EX (en) | Method for the production of pure alumina materials | |
JPS6445796A (en) | Apparatus for pulling up si single crystal and method therefor | |
JPS6448347A (en) | Manufacture of bulb |