JPH0255950B2 - - Google Patents

Info

Publication number
JPH0255950B2
JPH0255950B2 JP60187008A JP18700885A JPH0255950B2 JP H0255950 B2 JPH0255950 B2 JP H0255950B2 JP 60187008 A JP60187008 A JP 60187008A JP 18700885 A JP18700885 A JP 18700885A JP H0255950 B2 JPH0255950 B2 JP H0255950B2
Authority
JP
Japan
Prior art keywords
region
regions
channel
transistor
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60187008A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6247156A (ja
Inventor
Masaki Sato
Shigeru Atsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60187008A priority Critical patent/JPS6247156A/ja
Priority to US06/899,025 priority patent/US5016077A/en
Publication of JPS6247156A publication Critical patent/JPS6247156A/ja
Publication of JPH0255950B2 publication Critical patent/JPH0255950B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP60187008A 1985-08-26 1985-08-26 絶縁ゲ−ト型半導体装置 Granted JPS6247156A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60187008A JPS6247156A (ja) 1985-08-26 1985-08-26 絶縁ゲ−ト型半導体装置
US06/899,025 US5016077A (en) 1985-08-26 1986-08-22 Insulated gate type semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60187008A JPS6247156A (ja) 1985-08-26 1985-08-26 絶縁ゲ−ト型半導体装置

Publications (2)

Publication Number Publication Date
JPS6247156A JPS6247156A (ja) 1987-02-28
JPH0255950B2 true JPH0255950B2 (OSRAM) 1990-11-28

Family

ID=16198586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60187008A Granted JPS6247156A (ja) 1985-08-26 1985-08-26 絶縁ゲ−ト型半導体装置

Country Status (1)

Country Link
JP (1) JPS6247156A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02189153A (ja) * 1989-01-17 1990-07-25 Masaru Kobayashi 使い捨て容器入りうがいぐすり
JPH0422951U (OSRAM) * 1990-06-19 1992-02-25

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2553594B2 (ja) * 1987-11-16 1996-11-13 松下電器産業株式会社 半導体回路
JPH02274475A (ja) * 1989-04-13 1990-11-08 Honda Motor Co Ltd 締付装置
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
JP4835104B2 (ja) * 2005-10-24 2011-12-14 日亜化学工業株式会社 半導体発光装置
JP4952233B2 (ja) * 2006-04-19 2012-06-13 日亜化学工業株式会社 半導体装置
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
JP5349811B2 (ja) 2008-02-06 2013-11-20 シャープ株式会社 半導体発光装置
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
KR101064084B1 (ko) 2010-03-25 2011-09-08 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02189153A (ja) * 1989-01-17 1990-07-25 Masaru Kobayashi 使い捨て容器入りうがいぐすり
JPH0422951U (OSRAM) * 1990-06-19 1992-02-25

Also Published As

Publication number Publication date
JPS6247156A (ja) 1987-02-28

Similar Documents

Publication Publication Date Title
KR930000968B1 (ko) 반도체 집적회로
EP0243603B1 (en) Binary logic circuit
US4672584A (en) CMOS integrated circuit
JP2633746B2 (ja) 半導体装置
JPH07105447B2 (ja) 伝送ゲート
US10211205B2 (en) Field effect transistor structure for reducing contact resistance
JPH0255950B2 (OSRAM)
JP3071612B2 (ja) Ｃｍｏｓ型半導体集積回路
JP3320872B2 (ja) Ｃｍｏｓ集積回路装置
US4384300A (en) Negative resistance device
US5016077A (en) Insulated gate type semiconductor device and method of manufacturing the same
US5014105A (en) Semiconductor device of complementary integrated circuit
US4689653A (en) Complementary MOS integrated circuit including lock-up prevention parasitic transistors
US5083179A (en) CMOS semiconductor integrated circuit device
US5164617A (en) High speed bicmos logic circuit
US6713815B2 (en) Semiconductor device with transistors that convert a voltage difference into a drain current difference
JPH06275826A (ja) 半導体装置
JP2737629B2 (ja) Ｃｍｏｓ構成の出力回路を有する半導体装置
JPH0441505B2 (OSRAM)
JPH0535927B2 (OSRAM)
JP2609746B2 (ja) 半導体装置
JPH1028045A (ja) Ｍｏｓトランジスタ回路
JP3060311B2 (ja) 半導体集積回路
JP2780289B2 (ja) 半導体装置
US6118305A (en) Semiconductor integrated circuit capable of preventing breakdown of a gate oxide film

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term