JPH0254658B2 - - Google Patents
Info
- Publication number
- JPH0254658B2 JPH0254658B2 JP11151882A JP11151882A JPH0254658B2 JP H0254658 B2 JPH0254658 B2 JP H0254658B2 JP 11151882 A JP11151882 A JP 11151882A JP 11151882 A JP11151882 A JP 11151882A JP H0254658 B2 JPH0254658 B2 JP H0254658B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- semiconductor substrate
- ultrafine particles
- ultrafine
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11151882A JPS593952A (ja) | 1982-06-30 | 1982-06-30 | アルミニウム配線層の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11151882A JPS593952A (ja) | 1982-06-30 | 1982-06-30 | アルミニウム配線層の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS593952A JPS593952A (ja) | 1984-01-10 |
| JPH0254658B2 true JPH0254658B2 (enrdf_load_stackoverflow) | 1990-11-22 |
Family
ID=14563346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11151882A Granted JPS593952A (ja) | 1982-06-30 | 1982-06-30 | アルミニウム配線層の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS593952A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63208244A (ja) * | 1987-02-24 | 1988-08-29 | Nec Corp | 半導体装置の製造方法 |
| JPH01298169A (ja) * | 1988-05-27 | 1989-12-01 | Tokyo Electron Ltd | 膜形成方法 |
| JPH1197392A (ja) * | 1997-09-16 | 1999-04-09 | Ebara Corp | 微細窪みの充填方法及び装置 |
| KR100741040B1 (ko) * | 1999-10-15 | 2007-07-20 | 가부시키가이샤 에바라 세이사꾸쇼 | 배선형성방법 및 장치 |
| KR100805128B1 (ko) * | 2000-05-02 | 2008-02-21 | 쇼꾸바이 카세이 고교 가부시키가이샤 | 집적 회로의 제조방법 및 집적 회로의 제조방법에 의해형성된 집적 회로를 지닌 기판 |
| JP2006519493A (ja) * | 2003-02-07 | 2006-08-24 | ナノ クラスター デバイシス リミテッド | テンプレートでクラスタが集合した線 |
-
1982
- 1982-06-30 JP JP11151882A patent/JPS593952A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS593952A (ja) | 1984-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6041735A (en) | Inductively coupled plasma powder vaporization for fabricating integrated circuits | |
| EP0222884A4 (en) | COMBINATION OF AN INTEGRATED CIRCUIT WITH A FERROELECTRICAL MEMORY ARRANGEMENT AND ELECTRON BEAM METHOD FOR THEIR PRODUCTION. | |
| US3566207A (en) | Silicon-to-gold bonded structure and method of making the same | |
| JPH0254658B2 (enrdf_load_stackoverflow) | ||
| JP2718842B2 (ja) | 半導体集積回路用配線金属膜の製造方法 | |
| JPS6130028B2 (enrdf_load_stackoverflow) | ||
| JPH03225829A (ja) | 半導体装置の製造方法 | |
| JP3066673B2 (ja) | ドライエッチング方法 | |
| US20010032708A1 (en) | Electrode plate for plasma etching equipment for forming uniformly-etched surface | |
| JPS5856457A (ja) | 半導体装置の製造方法 | |
| JPH07252655A (ja) | 薄膜形成装置 | |
| JP2892321B2 (ja) | 半導体装置及びその製造方法 | |
| JP2760988B2 (ja) | ハイブリッド基板 | |
| JP2954219B2 (ja) | 半導体装置の製造プロセスに適用される改良された選択cvd | |
| JPH029530B2 (enrdf_load_stackoverflow) | ||
| JPS6148920A (ja) | 半導体装置の製造方法 | |
| JPH03261135A (ja) | アルミニウム系薄膜の形成方法および形成装置 | |
| JPS6329504A (ja) | バイアススパツタ方法 | |
| KR20040043847A (ko) | 스퍼터링 타겟의 제조장치 및 스퍼터링 타겟의 제조방법 | |
| JPH05136253A (ja) | 基体支持機構およびこれを用いた基体処理装置 | |
| JPS589902A (ja) | 金属微粒子の製造方法 | |
| JPH02308538A (ja) | 半導体装置の製造方法および製造装置 | |
| JPH04234124A (ja) | 半導体装置 | |
| JPS60160623A (ja) | 半導体装置の製造方法および製造装置 | |
| JPH0426769A (ja) | 銅薄膜の形成方法 |