JPH0247865B2 - - Google Patents

Info

Publication number
JPH0247865B2
JPH0247865B2 JP56127266A JP12726681A JPH0247865B2 JP H0247865 B2 JPH0247865 B2 JP H0247865B2 JP 56127266 A JP56127266 A JP 56127266A JP 12726681 A JP12726681 A JP 12726681A JP H0247865 B2 JPH0247865 B2 JP H0247865B2
Authority
JP
Japan
Prior art keywords
thin film
transistor
capacitor
gate
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56127266A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5828867A (ja
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP56127266A priority Critical patent/JPS5828867A/ja
Publication of JPS5828867A publication Critical patent/JPS5828867A/ja
Publication of JPH0247865B2 publication Critical patent/JPH0247865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP56127266A 1981-08-13 1981-08-13 薄膜トランジスタの製造方法 Granted JPS5828867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56127266A JPS5828867A (ja) 1981-08-13 1981-08-13 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56127266A JPS5828867A (ja) 1981-08-13 1981-08-13 薄膜トランジスタの製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP3213428A Division JPH0722201B2 (ja) 1991-08-26 1991-08-26 液晶表示装置の製造方法
JP21342791A Division JPH0828521B2 (ja) 1991-08-26 1991-08-26 液晶表示装置

Publications (2)

Publication Number Publication Date
JPS5828867A JPS5828867A (ja) 1983-02-19
JPH0247865B2 true JPH0247865B2 (enrdf_load_stackoverflow) 1990-10-23

Family

ID=14955761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56127266A Granted JPS5828867A (ja) 1981-08-13 1981-08-13 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5828867A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04319859A (ja) * 1991-04-18 1992-11-10 Canon Inc 自動発呼機能付きファクシミリ装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2525263Y2 (ja) * 1989-06-28 1997-02-05 三恵工業株式会社 スタンプドマフラ
JPH0722201B2 (ja) * 1991-08-26 1995-03-08 セイコーエプソン株式会社 液晶表示装置の製造方法
JP2996854B2 (ja) * 1994-01-27 2000-01-11 株式会社 半導体エネルギー研究所 絶縁ゲート型電界効果半導体装置作製方法
JP2648788B2 (ja) * 1994-06-10 1997-09-03 株式会社 半導体エネルギー研究所 絶縁ゲート型電界効果半導体装置
JP2789168B2 (ja) * 1994-06-10 1998-08-20 株式会社 半導体エネルギー研究所 液晶表示パネル用絶縁ゲート型電界効果半導体装置の作製方法
US10502321B2 (en) * 2014-01-14 2019-12-10 Compart Systems Pte, Ltd. Gasket retainer for surface mount fluid component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04319859A (ja) * 1991-04-18 1992-11-10 Canon Inc 自動発呼機能付きファクシミリ装置

Also Published As

Publication number Publication date
JPS5828867A (ja) 1983-02-19

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