JPS5828867A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS5828867A
JPS5828867A JP56127266A JP12726681A JPS5828867A JP S5828867 A JPS5828867 A JP S5828867A JP 56127266 A JP56127266 A JP 56127266A JP 12726681 A JP12726681 A JP 12726681A JP S5828867 A JPS5828867 A JP S5828867A
Authority
JP
Japan
Prior art keywords
thin film
transistor
capacitor
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56127266A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0247865B2 (enrdf_load_stackoverflow
Inventor
Shinji Morozumi
両角　伸治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56127266A priority Critical patent/JPS5828867A/ja
Publication of JPS5828867A publication Critical patent/JPS5828867A/ja
Publication of JPH0247865B2 publication Critical patent/JPH0247865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP56127266A 1981-08-13 1981-08-13 薄膜トランジスタの製造方法 Granted JPS5828867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56127266A JPS5828867A (ja) 1981-08-13 1981-08-13 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56127266A JPS5828867A (ja) 1981-08-13 1981-08-13 薄膜トランジスタの製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP3213428A Division JPH0722201B2 (ja) 1991-08-26 1991-08-26 液晶表示装置の製造方法
JP21342791A Division JPH0828521B2 (ja) 1991-08-26 1991-08-26 液晶表示装置

Publications (2)

Publication Number Publication Date
JPS5828867A true JPS5828867A (ja) 1983-02-19
JPH0247865B2 JPH0247865B2 (enrdf_load_stackoverflow) 1990-10-23

Family

ID=14955761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56127266A Granted JPS5828867A (ja) 1981-08-13 1981-08-13 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5828867A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0317131U (enrdf_load_stackoverflow) * 1989-06-28 1991-02-20
JPH0669235A (ja) * 1991-08-26 1994-03-11 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH06333950A (ja) * 1994-01-27 1994-12-02 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置作製方法
JPH0799316A (ja) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH0799208A (ja) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd 液晶表示パネル用絶縁ゲート型電界効果半導体装置の作製方法
US20180135756A1 (en) * 2014-01-14 2018-05-17 Vistadeltek, Llc Gasket retainer for surface mount fluid component

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04319859A (ja) * 1991-04-18 1992-11-10 Canon Inc 自動発呼機能付きファクシミリ装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0317131U (enrdf_load_stackoverflow) * 1989-06-28 1991-02-20
JPH0669235A (ja) * 1991-08-26 1994-03-11 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH06333950A (ja) * 1994-01-27 1994-12-02 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置作製方法
JPH0799316A (ja) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH0799208A (ja) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd 液晶表示パネル用絶縁ゲート型電界効果半導体装置の作製方法
US20180135756A1 (en) * 2014-01-14 2018-05-17 Vistadeltek, Llc Gasket retainer for surface mount fluid component

Also Published As

Publication number Publication date
JPH0247865B2 (enrdf_load_stackoverflow) 1990-10-23

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