JPH0237689B2 - - Google Patents

Info

Publication number
JPH0237689B2
JPH0237689B2 JP59210052A JP21005284A JPH0237689B2 JP H0237689 B2 JPH0237689 B2 JP H0237689B2 JP 59210052 A JP59210052 A JP 59210052A JP 21005284 A JP21005284 A JP 21005284A JP H0237689 B2 JPH0237689 B2 JP H0237689B2
Authority
JP
Japan
Prior art keywords
ipa
developer
material layer
resist material
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59210052A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6188526A (ja
Inventor
Juji Hamada
Tetsuhiro Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59210052A priority Critical patent/JPS6188526A/ja
Publication of JPS6188526A publication Critical patent/JPS6188526A/ja
Publication of JPH0237689B2 publication Critical patent/JPH0237689B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00—

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59210052A 1984-10-05 1984-10-05 ポジ型微細加工法 Granted JPS6188526A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59210052A JPS6188526A (ja) 1984-10-05 1984-10-05 ポジ型微細加工法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59210052A JPS6188526A (ja) 1984-10-05 1984-10-05 ポジ型微細加工法

Publications (2)

Publication Number Publication Date
JPS6188526A JPS6188526A (ja) 1986-05-06
JPH0237689B2 true JPH0237689B2 (cg-RX-API-DMAC10.html) 1990-08-27

Family

ID=16583009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59210052A Granted JPS6188526A (ja) 1984-10-05 1984-10-05 ポジ型微細加工法

Country Status (1)

Country Link
JP (1) JPS6188526A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0328851A (ja) * 1988-05-24 1991-02-07 Toppan Printing Co Ltd 電子ビームレジストのパターン形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026220B2 (ja) * 1977-07-19 1985-06-22 三菱電機株式会社 静電記録装置用搬送ロ−ラ
JPS5739049A (en) * 1980-08-21 1982-03-04 Sumitomo Metal Ind Ltd Manufacture of seamless eccentric reducer tube joint

Also Published As

Publication number Publication date
JPS6188526A (ja) 1986-05-06

Similar Documents

Publication Publication Date Title
TW463227B (en) Frequency doubling hybrid photoresist
JPS6313035A (ja) パタ−ン形成方法
JPS59124134A (ja) レジスト・マスクの形成方法
JPH0237689B2 (cg-RX-API-DMAC10.html)
JPS6037548A (ja) 照射線反応ネガレジストの形成方法
TW200300962A (en) Improved lithography process for transparent substrates
JPH04363017A (ja) パターン形成方法
JPS5833246A (ja) ポジ型レジストのパタ−ン形成方法
JP2002148809A (ja) レジスト基板の製造方法及びレジスト基板
JPH0821532B2 (ja) 半導体装置の製造方法
JPH01129251A (ja) ポジ型微細加工法
JPS6211852A (ja) パタ−ン形成方法
JPS5877230A (ja) パタ−ン形成方法
JPS59232418A (ja) 微細パタ−ン形成法
JP2617923B2 (ja) パターン形成方法
JPS60134234A (ja) ネガ型レジスト組成物
JP3179127B2 (ja) パターン形成方法
JPH05210231A (ja) 位相シフトマスク及びその製造方法
JPH06332181A (ja) レジスト構造とその製造方法
JPS61131446A (ja) レジストパタ−ン形成方法
JPH02151863A (ja) レジスト材料
JPH033210B2 (cg-RX-API-DMAC10.html)
JPH01140718A (ja) パターン形成方法
JPS58140118A (ja) レジストパタ−ン形成方法
JPS63273856A (ja) レジストパタ−ンの形成方法