JPH0235398B2 - - Google Patents
Info
- Publication number
- JPH0235398B2 JPH0235398B2 JP57102619A JP10261982A JPH0235398B2 JP H0235398 B2 JPH0235398 B2 JP H0235398B2 JP 57102619 A JP57102619 A JP 57102619A JP 10261982 A JP10261982 A JP 10261982A JP H0235398 B2 JPH0235398 B2 JP H0235398B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- data
- bit line
- write data
- data line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010586 diagram Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57102619A JPS58220293A (ja) | 1982-06-15 | 1982-06-15 | 記憶装置 |
DE8383303470T DE3378143D1 (en) | 1982-06-15 | 1983-06-15 | Dynamic memory with a reduced number of signal lines |
EP83303470A EP0098080B1 (en) | 1982-06-15 | 1983-06-15 | Dynamic memory with a reduced number of signal lines |
US07/166,788 US4780849A (en) | 1982-06-15 | 1988-03-02 | Information handling apparatus having memory means |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57102619A JPS58220293A (ja) | 1982-06-15 | 1982-06-15 | 記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58220293A JPS58220293A (ja) | 1983-12-21 |
JPH0235398B2 true JPH0235398B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-08-09 |
Family
ID=14332260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57102619A Granted JPS58220293A (ja) | 1982-06-15 | 1982-06-15 | 記憶装置 |
Country Status (4)
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6196595A (ja) * | 1984-10-17 | 1986-05-15 | Toshiba Corp | 半導体記憶装置 |
JPS63894A (ja) * | 1986-06-20 | 1988-01-05 | Hitachi Ltd | メモリ |
JPH0831275B2 (ja) * | 1986-09-09 | 1996-03-27 | 日本電気株式会社 | メモリ回路 |
JP2587229B2 (ja) * | 1987-03-11 | 1997-03-05 | 日本テキサス・インスツルメンツ株式会社 | アービタ回路 |
JP2578139B2 (ja) * | 1987-11-16 | 1997-02-05 | 沖電気工業株式会社 | Icカード |
US5007022A (en) * | 1987-12-21 | 1991-04-09 | Texas Instruments Incorporated | Two-port two-transistor DRAM |
WO1994022142A1 (en) * | 1993-03-17 | 1994-09-29 | Zycad Corporation | Random access memory (ram) based configurable arrays |
EP1323168A2 (en) | 2000-08-30 | 2003-07-02 | Micron Technology, Inc. | Semiconductor memory having dual port cell supporting hidden refresh |
US6903964B2 (en) * | 2002-06-28 | 2005-06-07 | Freescale Semiconductor, Inc. | MRAM architecture with electrically isolated read and write circuitry |
JP2004054547A (ja) * | 2002-07-19 | 2004-02-19 | Nec Electronics Corp | バスインタフェース回路及びレシーバ回路 |
US7187610B1 (en) * | 2003-07-17 | 2007-03-06 | Actel Corporation | Flash/dynamic random access memory field programmable gate array |
US6891769B2 (en) * | 2003-07-17 | 2005-05-10 | Actel Corporation | Flash/dynamic random access memory field programmable gate array |
JP2013191265A (ja) * | 2012-02-17 | 2013-09-26 | Semiconductor Energy Lab Co Ltd | 記憶装置、記憶装置の駆動方法、及び該記憶装置を備えた電子機器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3651472A (en) * | 1970-03-04 | 1972-03-21 | Honeywell Inc | Multistate flip-flop element including a local memory for use in constructing a data processing system |
DE2364253A1 (de) * | 1973-12-22 | 1975-06-26 | Olympia Werke Ag | Schaltungsanordnung fuer mikroprogrammierte geraete der datenverarbeitung |
US3919694A (en) * | 1974-05-10 | 1975-11-11 | Hewlett Packard Co | Circulating shift register memory having editing and subroutining capability |
NL7713707A (nl) * | 1977-12-12 | 1979-06-14 | Philips Nv | Informatiebuffergeheugen van het "eerst-in, eerst-uit" type met variabele ingang en vaste uitgang. |
JPS56147203A (en) * | 1980-04-17 | 1981-11-16 | Toshiba Mach Co Ltd | Sequence control device equipped with row cyclic operation part |
US4456965A (en) * | 1980-10-14 | 1984-06-26 | Texas Instruments Incorporated | Data processing system having multiple buses |
NL8103477A (nl) * | 1981-07-23 | 1983-02-16 | Philips Nv | Kantoorsysteem met eindstations, een dataverwerkende processor en hulpapparaten en een doorschakelinrichting voor het verzorgen van massaal datatransport tussen de hulpapparaten. |
-
1982
- 1982-06-15 JP JP57102619A patent/JPS58220293A/ja active Granted
-
1983
- 1983-06-15 EP EP83303470A patent/EP0098080B1/en not_active Expired
- 1983-06-15 DE DE8383303470T patent/DE3378143D1/de not_active Expired
-
1988
- 1988-03-02 US US07/166,788 patent/US4780849A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0098080B1 (en) | 1988-09-28 |
EP0098080A3 (en) | 1985-05-15 |
US4780849A (en) | 1988-10-25 |
JPS58220293A (ja) | 1983-12-21 |
DE3378143D1 (en) | 1988-11-03 |
EP0098080A2 (en) | 1984-01-11 |
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