DE3378143D1 - Dynamic memory with a reduced number of signal lines - Google Patents

Dynamic memory with a reduced number of signal lines

Info

Publication number
DE3378143D1
DE3378143D1 DE8383303470T DE3378143T DE3378143D1 DE 3378143 D1 DE3378143 D1 DE 3378143D1 DE 8383303470 T DE8383303470 T DE 8383303470T DE 3378143 T DE3378143 T DE 3378143T DE 3378143 D1 DE3378143 D1 DE 3378143D1
Authority
DE
Germany
Prior art keywords
signal lines
reduced number
dynamic memory
dynamic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383303470T
Other languages
English (en)
Inventor
Katsuhiko C O Nec Cor Nakagawa
Takao C O Nec Corporati Kusano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3378143D1 publication Critical patent/DE3378143D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE8383303470T 1982-06-15 1983-06-15 Dynamic memory with a reduced number of signal lines Expired DE3378143D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57102619A JPS58220293A (ja) 1982-06-15 1982-06-15 記憶装置

Publications (1)

Publication Number Publication Date
DE3378143D1 true DE3378143D1 (en) 1988-11-03

Family

ID=14332260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383303470T Expired DE3378143D1 (en) 1982-06-15 1983-06-15 Dynamic memory with a reduced number of signal lines

Country Status (4)

Country Link
US (1) US4780849A (de)
EP (1) EP0098080B1 (de)
JP (1) JPS58220293A (de)
DE (1) DE3378143D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196595A (ja) * 1984-10-17 1986-05-15 Toshiba Corp 半導体記憶装置
JPS63894A (ja) * 1986-06-20 1988-01-05 Hitachi Ltd メモリ
JPH0831275B2 (ja) * 1986-09-09 1996-03-27 日本電気株式会社 メモリ回路
JP2587229B2 (ja) * 1987-03-11 1997-03-05 日本テキサス・インスツルメンツ株式会社 アービタ回路
JP2578139B2 (ja) * 1987-11-16 1997-02-05 沖電気工業株式会社 Ｉｃカード
US5007022A (en) * 1987-12-21 1991-04-09 Texas Instruments Incorporated Two-port two-transistor DRAM
JP3922653B2 (ja) * 1993-03-17 2007-05-30 ゲイトフィールド・コーポレイション ランダムアクセスメモリ（ｒａｍ）ベースのコンフィギュラブルアレイ
WO2002019341A2 (en) 2000-08-30 2002-03-07 Micron Technology, Inc. Semiconductor memory having dual port cell supporting hidden refresh
US6903964B2 (en) * 2002-06-28 2005-06-07 Freescale Semiconductor, Inc. MRAM architecture with electrically isolated read and write circuitry
JP2004054547A (ja) * 2002-07-19 2004-02-19 Nec Electronics Corp バスインタフェース回路及びレシーバ回路
US7187610B1 (en) * 2003-07-17 2007-03-06 Actel Corporation Flash/dynamic random access memory field programmable gate array
US6891769B2 (en) * 2003-07-17 2005-05-10 Actel Corporation Flash/dynamic random access memory field programmable gate array
JP2013191265A (ja) * 2012-02-17 2013-09-26 Semiconductor Energy Lab Co Ltd 記憶装置、記憶装置の駆動方法、及び該記憶装置を備えた電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651472A (en) * 1970-03-04 1972-03-21 Honeywell Inc Multistate flip-flop element including a local memory for use in constructing a data processing system
DE2364253A1 (de) * 1973-12-22 1975-06-26 Olympia Werke Ag Schaltungsanordnung fuer mikroprogrammierte geraete der datenverarbeitung
US3919694A (en) * 1974-05-10 1975-11-11 Hewlett Packard Co Circulating shift register memory having editing and subroutining capability
NL7713707A (nl) * 1977-12-12 1979-06-14 Philips Nv Informatiebuffergeheugen van het "eerst-in, eerst-uit" type met variabele ingang en vaste uitgang.
JPS56147203A (en) * 1980-04-17 1981-11-16 Toshiba Mach Co Ltd Sequence control device equipped with row cyclic operation part
US4456965A (en) * 1980-10-14 1984-06-26 Texas Instruments Incorporated Data processing system having multiple buses
NL8103477A (nl) * 1981-07-23 1983-02-16 Philips Nv Kantoorsysteem met eindstations, een dataverwerkende processor en hulpapparaten en een doorschakelinrichting voor het verzorgen van massaal datatransport tussen de hulpapparaten.

Also Published As

Publication number Publication date
EP0098080A2 (de) 1984-01-11
EP0098080B1 (de) 1988-09-28
JPH0235398B2 (de) 1990-08-09
US4780849A (en) 1988-10-25
EP0098080A3 (en) 1985-05-15
JPS58220293A (ja) 1983-12-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee