JPH0230836Y2 - - Google Patents
Info
- Publication number
- JPH0230836Y2 JPH0230836Y2 JP5569382U JP5569382U JPH0230836Y2 JP H0230836 Y2 JPH0230836 Y2 JP H0230836Y2 JP 5569382 U JP5569382 U JP 5569382U JP 5569382 U JP5569382 U JP 5569382U JP H0230836 Y2 JPH0230836 Y2 JP H0230836Y2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- rotating
- silicon substrate
- etched
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 111
- 239000000758 substrate Substances 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000002791 soaking Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 9
- 238000003756 stirring Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5569382U JPS58159737U (ja) | 1982-04-19 | 1982-04-19 | 半導体基板のエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5569382U JPS58159737U (ja) | 1982-04-19 | 1982-04-19 | 半導体基板のエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58159737U JPS58159737U (ja) | 1983-10-25 |
| JPH0230836Y2 true JPH0230836Y2 (enrdf_load_stackoverflow) | 1990-08-20 |
Family
ID=30066258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5569382U Granted JPS58159737U (ja) | 1982-04-19 | 1982-04-19 | 半導体基板のエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58159737U (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6224441B2 (ja) * | 2013-11-28 | 2017-11-01 | 京セラ株式会社 | エッチング方法 |
-
1982
- 1982-04-19 JP JP5569382U patent/JPS58159737U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58159737U (ja) | 1983-10-25 |
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