JPH0230584B2 - - Google Patents

Info

Publication number
JPH0230584B2
JPH0230584B2 JP57010833A JP1083382A JPH0230584B2 JP H0230584 B2 JPH0230584 B2 JP H0230584B2 JP 57010833 A JP57010833 A JP 57010833A JP 1083382 A JP1083382 A JP 1083382A JP H0230584 B2 JPH0230584 B2 JP H0230584B2
Authority
JP
Japan
Prior art keywords
region
semiconductor device
collector
insulating layer
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57010833A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57143860A (en
Inventor
Furunerisu De Guraafu Hendoriku
Herurafusu Bonken Biruherumusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS57143860A publication Critical patent/JPS57143860A/ja
Publication of JPH0230584B2 publication Critical patent/JPH0230584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP57010833A 1981-01-26 1982-01-26 Semiconductor device Granted JPS57143860A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8100347A NL8100347A (nl) 1981-01-26 1981-01-26 Halfgeleiderinrichting met een beveiligingsinrichting.

Publications (2)

Publication Number Publication Date
JPS57143860A JPS57143860A (en) 1982-09-06
JPH0230584B2 true JPH0230584B2 (en, 2012) 1990-07-06

Family

ID=19836919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57010833A Granted JPS57143860A (en) 1981-01-26 1982-01-26 Semiconductor device

Country Status (8)

Country Link
US (1) US4697199A (en, 2012)
EP (1) EP0057024B1 (en, 2012)
JP (1) JPS57143860A (en, 2012)
AU (1) AU550015B2 (en, 2012)
CA (1) CA1180468A (en, 2012)
DE (1) DE3261244D1 (en, 2012)
IE (1) IE53096B1 (en, 2012)
NL (1) NL8100347A (en, 2012)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123055A (ja) * 1983-12-07 1985-07-01 Fujitsu Ltd 半導体装置及びその製造方法
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
JPS63244874A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 入力保護回路
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
JP2679046B2 (ja) * 1987-05-22 1997-11-19 ソニー株式会社 メモリ装置
US4812891A (en) * 1987-12-17 1989-03-14 Maxim Integrated Products Bipolar lateral pass-transistor for CMOS circuits
JPH03502389A (ja) * 1988-02-02 1991-05-30 アナログ　デバイセス　インコーポレーテッド 静電損傷を減少させる手段を備えた集積回路
US5141898A (en) * 1988-02-02 1992-08-25 Analog Devices, Incorporated Integrated circuit with means for reducing ESD damage
US5089433A (en) * 1988-08-08 1992-02-18 National Semiconductor Corporation Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
EP0355501B1 (de) * 1988-08-16 1994-02-16 Siemens Aktiengesellschaft Bipolartransistor als Schutzelement für integrierte Schaltungen
NL8900239A (nl) * 1989-02-01 1990-09-03 Philips Nv Protectie-element en werkwijze ter vervaardiging daarvan.
US5225896A (en) * 1989-02-01 1993-07-06 U.S. Philips Corporation Protection element and method of manufacturing same
JPH0821840B2 (ja) * 1989-12-07 1996-03-04 富士電機株式会社 パワー半導体装置のスナバ回路
US5465189A (en) * 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
TW203148B (en, 2012) * 1991-03-27 1993-04-01 American Telephone & Telegraph
US5401997A (en) * 1992-01-22 1995-03-28 Integrated Device Technology, Inc. ESD protection for poly resistor on oxide
JP2512118Y2 (ja) * 1993-01-30 1996-09-25 寛 野垣内 内装用造作柱材
US5459083A (en) * 1993-03-01 1995-10-17 Motorola, Inc. Method for making BIMOS device having a bipolar transistor and a MOS triggering transistor
US5733794A (en) * 1995-02-06 1998-03-31 Motorola, Inc. Process for forming a semiconductor device with ESD protection
KR100214235B1 (ko) * 1995-05-24 1999-08-02 가네꼬 히사시 반도체 장치 및 그 제조방법
JPH09312391A (ja) * 1996-05-22 1997-12-02 Toshiba Corp 半導体装置およびその製造方法
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
US6153892A (en) * 1998-02-12 2000-11-28 Nec Corporation Semiconductor device and method for manufacture thereof
US20140266393A1 (en) * 2013-03-14 2014-09-18 Linear Technology Corporation Bipolar transistor with lowered 1/f noise
US10937785B2 (en) * 2016-01-29 2021-03-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
GB1179388A (en) * 1967-11-02 1970-01-28 Ncr Co Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
JPS5410836B1 (en, 2012) * 1970-06-26 1979-05-10
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
JPS53145486A (en) * 1977-05-24 1978-12-18 Mitsubishi Electric Corp Protecting circuit using insulated gate field effect type transistors
JPS5563871A (en) * 1978-11-06 1980-05-14 Nec Corp Protector for field-effect transistor with insulated gate
JPS55165682A (en) * 1979-06-11 1980-12-24 Mitsubishi Electric Corp Mos field effect semiconductor device

Also Published As

Publication number Publication date
DE3261244D1 (en) 1985-01-03
CA1180468A (en) 1985-01-02
IE820142L (en) 1982-07-26
NL8100347A (nl) 1982-08-16
AU7974182A (en) 1982-08-05
EP0057024A1 (en) 1982-08-04
IE53096B1 (en) 1988-06-22
US4697199A (en) 1987-09-29
EP0057024B1 (en) 1984-11-21
JPS57143860A (en) 1982-09-06
AU550015B2 (en) 1986-02-27

Similar Documents

Publication Publication Date Title
JPH0230584B2 (en, 2012)
US5502317A (en) Silicon controlled rectifier and method for forming the same
US6639284B1 (en) Compensated-well electrostatic discharge protection structure
US5272371A (en) Electrostatic discharge protection structure
US6548865B2 (en) High breakdown voltage MOS type semiconductor apparatus
US4595941A (en) Protection circuit for integrated circuit devices
US5372954A (en) Method of fabricating an insulated gate bipolar transistor
JP3180831B2 (ja) 絶縁ゲート制御半導体装置
US5701024A (en) Electrostatic discharge (ESD) protection structure for high voltage pins
JP2666996B2 (ja) 放射線耐度改善型ｍｏｓトランジスタ
US5686750A (en) Power semiconductor device having improved reverse recovery voltage
JPH0758784B2 (ja) ラッチ・アップ防止性能を改良したラテラル形絶縁ゲート・バイポーラ・トランジスタ
JP2862027B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JP2814079B2 (ja) 半導体集積回路とその製造方法
US5714783A (en) Field-effect transistor
US4260910A (en) Integrated circuits with built-in power supply protection
US5949128A (en) Bipolar transistor with MOS-controlled protection for reverse-biased emitter-base junction
US4868921A (en) High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
JPH0362028B2 (en, 2012)
US3466511A (en) Insulated gate field effect transistors with means preventing overvoltage feedthrough by auxiliary structure providing bipolar transistor action through substrate
US4982259A (en) Sensitive thyristor having improved noise-capability
US5962898A (en) Field-effect transistor
JP3216315B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JPS6239547B2 (en, 2012)
EP0281032B1 (en) Semiconductor device comprising a field effect transistor