JPH0230575B2 - - Google Patents

Info

Publication number
JPH0230575B2
JPH0230575B2 JP55170365A JP17036580A JPH0230575B2 JP H0230575 B2 JPH0230575 B2 JP H0230575B2 JP 55170365 A JP55170365 A JP 55170365A JP 17036580 A JP17036580 A JP 17036580A JP H0230575 B2 JPH0230575 B2 JP H0230575B2
Authority
JP
Japan
Prior art keywords
polysilicon
doped layer
base
oxide film
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55170365A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5793569A (en
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55170365A priority Critical patent/JPS5793569A/ja
Publication of JPS5793569A publication Critical patent/JPS5793569A/ja
Publication of JPH0230575B2 publication Critical patent/JPH0230575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP55170365A 1980-12-03 1980-12-03 Manufacture of semiconductor device Granted JPS5793569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170365A JPS5793569A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170365A JPS5793569A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5793569A JPS5793569A (en) 1982-06-10
JPH0230575B2 true JPH0230575B2 (enrdf_load_stackoverflow) 1990-07-06

Family

ID=15903577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170365A Granted JPS5793569A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793569A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5070693B2 (ja) * 2005-11-11 2012-11-14 サンケン電気株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558569A (en) * 1978-10-24 1980-05-01 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5793569A (en) 1982-06-10

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