JPS5793569A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5793569A
JPS5793569A JP17036580A JP17036580A JPS5793569A JP S5793569 A JPS5793569 A JP S5793569A JP 17036580 A JP17036580 A JP 17036580A JP 17036580 A JP17036580 A JP 17036580A JP S5793569 A JPS5793569 A JP S5793569A
Authority
JP
Japan
Prior art keywords
film
oxidized
polysilicon
base
nitrided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17036580A
Other languages
Japanese (ja)
Other versions
JPH0230575B2 (en
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17036580A priority Critical patent/JPS5793569A/en
Publication of JPS5793569A publication Critical patent/JPS5793569A/en
Publication of JPH0230575B2 publication Critical patent/JPH0230575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To suppress the increase in the parasitic base resistance by covering a hole of a nitrided film used as a mask newly with a nitrided film to block the hole, and then advancing the selective oxidation of a thick polysilicon of a field oxidized unit continuously. CONSTITUTION:A field oxidized film 2, a base diffused region 3 and a field oxidized film is laminated on a semiconductor substrate 1 to form a polysilicon film 21 of different thickness. Subsequently, the polysilicon 21 is covered with oxidation resistant mask of the first nitrided film 51, and the exposed portion of the polysilicon is oxidized. When the polysilicon 54 on the base region has completely oxidized to become an oxidized film 23a, the second nitrided film 56 for blocking the hole is covered, and the oxidation of the part 53 partly oxidized is continued. The part 53 of the thick polysilicon film is completely oxidized to become an oxidized film 23b, and the resistance r between the base and the emitter is not increased.
JP17036580A 1980-12-03 1980-12-03 Manufacture of semiconductor device Granted JPS5793569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17036580A JPS5793569A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17036580A JPS5793569A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5793569A true JPS5793569A (en) 1982-06-10
JPH0230575B2 JPH0230575B2 (en) 1990-07-06

Family

ID=15903577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17036580A Granted JPS5793569A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793569A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134588A (en) * 2005-11-11 2007-05-31 Sanken Electric Co Ltd Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558569A (en) * 1978-10-24 1980-05-01 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558569A (en) * 1978-10-24 1980-05-01 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134588A (en) * 2005-11-11 2007-05-31 Sanken Electric Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0230575B2 (en) 1990-07-06

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