JPH0230116B2 - - Google Patents
Info
- Publication number
- JPH0230116B2 JPH0230116B2 JP56001000A JP100081A JPH0230116B2 JP H0230116 B2 JPH0230116 B2 JP H0230116B2 JP 56001000 A JP56001000 A JP 56001000A JP 100081 A JP100081 A JP 100081A JP H0230116 B2 JPH0230116 B2 JP H0230116B2
- Authority
- JP
- Japan
- Prior art keywords
- sense amplifiers
- data lines
- sense
- adjacent
- memory cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000011295 pitch Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56001000A JPS57113484A (en) | 1981-01-07 | 1981-01-07 | Semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56001000A JPS57113484A (en) | 1981-01-07 | 1981-01-07 | Semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57113484A JPS57113484A (en) | 1982-07-14 |
| JPH0230116B2 true JPH0230116B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-07-04 |
Family
ID=11489311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56001000A Granted JPS57113484A (en) | 1981-01-07 | 1981-01-07 | Semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57113484A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0612603B2 (ja) * | 1986-12-22 | 1994-02-16 | 日本電気株式会社 | 半導体集積化メモリ |
| JPS63204590A (ja) * | 1987-02-19 | 1988-08-24 | Nec Corp | 半導体集積化メモリ |
| JPH0612605B2 (ja) * | 1987-03-18 | 1994-02-16 | 日本電気株式会社 | 半導体集積化メモリ |
| JPH0166698U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1987-10-20 | 1989-04-28 |
-
1981
- 1981-01-07 JP JP56001000A patent/JPS57113484A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57113484A (en) | 1982-07-14 |