JPH02299039A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPH02299039A
JPH02299039A JP1119506A JP11950689A JPH02299039A JP H02299039 A JPH02299039 A JP H02299039A JP 1119506 A JP1119506 A JP 1119506A JP 11950689 A JP11950689 A JP 11950689A JP H02299039 A JPH02299039 A JP H02299039A
Authority
JP
Japan
Prior art keywords
memory cell
memory cells
read
flag
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1119506A
Other languages
English (en)
Japanese (ja)
Inventor
Osamu Matsumoto
修 松本
Hiroyoshi Murata
浩義 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1119506A priority Critical patent/JPH02299039A/ja
Priority to EP19900108913 priority patent/EP0397194A3/en
Priority to KR1019900006774A priority patent/KR940000898B1/ko
Publication of JPH02299039A publication Critical patent/JPH02299039A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Storage Device Security (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP1119506A 1989-05-12 1989-05-12 半導体メモリ装置 Pending JPH02299039A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1119506A JPH02299039A (ja) 1989-05-12 1989-05-12 半導体メモリ装置
EP19900108913 EP0397194A3 (en) 1989-05-12 1990-05-11 Semiconductor memory device having two types of memory cell
KR1019900006774A KR940000898B1 (ko) 1989-05-12 1990-05-12 반도체 메모리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1119506A JPH02299039A (ja) 1989-05-12 1989-05-12 半導体メモリ装置

Publications (1)

Publication Number Publication Date
JPH02299039A true JPH02299039A (ja) 1990-12-11

Family

ID=14762948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1119506A Pending JPH02299039A (ja) 1989-05-12 1989-05-12 半導体メモリ装置

Country Status (3)

Country Link
EP (1) EP0397194A3 (ko)
JP (1) JPH02299039A (ko)
KR (1) KR940000898B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457298A (ja) * 1990-06-21 1992-02-25 Mitsubishi Electric Corp 半導体記憶装置
JPH0793223A (ja) * 1993-09-20 1995-04-07 Nec Corp 記憶情報保護回路
US7948026B2 (en) 2002-07-09 2011-05-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61148698A (ja) * 1984-12-20 1986-07-07 Matsushita Electronics Corp 紫外線消去型半導体不揮発性メモリ
JPS61249156A (ja) * 1985-04-26 1986-11-06 Hitachi Ltd 半導体記憶装置
JPS62107500A (ja) * 1985-11-05 1987-05-18 Matsushita Electronics Corp 半導体メモリ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599707A (en) * 1984-03-01 1986-07-08 Signetics Corporation Byte wide EEPROM with individual write circuits and write prevention means
JPS618798A (ja) * 1984-06-21 1986-01-16 Nec Corp 不揮発性記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61148698A (ja) * 1984-12-20 1986-07-07 Matsushita Electronics Corp 紫外線消去型半導体不揮発性メモリ
JPS61249156A (ja) * 1985-04-26 1986-11-06 Hitachi Ltd 半導体記憶装置
JPS62107500A (ja) * 1985-11-05 1987-05-18 Matsushita Electronics Corp 半導体メモリ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457298A (ja) * 1990-06-21 1992-02-25 Mitsubishi Electric Corp 半導体記憶装置
JPH0793223A (ja) * 1993-09-20 1995-04-07 Nec Corp 記憶情報保護回路
US7948026B2 (en) 2002-07-09 2011-05-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same
US8138043B2 (en) 2002-07-09 2012-03-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same
US8674431B2 (en) 2002-07-09 2014-03-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same

Also Published As

Publication number Publication date
EP0397194A2 (en) 1990-11-14
KR940000898B1 (ko) 1994-02-04
EP0397194A3 (en) 1992-02-26
KR900019045A (ko) 1990-12-22

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