JPH0228895B2 - - Google Patents

Info

Publication number
JPH0228895B2
JPH0228895B2 JP57083510A JP8351082A JPH0228895B2 JP H0228895 B2 JPH0228895 B2 JP H0228895B2 JP 57083510 A JP57083510 A JP 57083510A JP 8351082 A JP8351082 A JP 8351082A JP H0228895 B2 JPH0228895 B2 JP H0228895B2
Authority
JP
Japan
Prior art keywords
emitter
base
region
collector
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57083510A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58199563A (ja
Inventor
Tadahiko Tanaka
Norihiro Shigeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57083510A priority Critical patent/JPS58199563A/ja
Publication of JPS58199563A publication Critical patent/JPS58199563A/ja
Publication of JPH0228895B2 publication Critical patent/JPH0228895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57083510A 1982-05-17 1982-05-17 ダンパ−ダイオ−ド付トランジスタ Granted JPS58199563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57083510A JPS58199563A (ja) 1982-05-17 1982-05-17 ダンパ−ダイオ−ド付トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57083510A JPS58199563A (ja) 1982-05-17 1982-05-17 ダンパ−ダイオ−ド付トランジスタ

Publications (2)

Publication Number Publication Date
JPS58199563A JPS58199563A (ja) 1983-11-19
JPH0228895B2 true JPH0228895B2 (enrdf_load_stackoverflow) 1990-06-27

Family

ID=13804476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57083510A Granted JPS58199563A (ja) 1982-05-17 1982-05-17 ダンパ−ダイオ−ド付トランジスタ

Country Status (1)

Country Link
JP (1) JPS58199563A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7656009B2 (en) * 2007-04-09 2010-02-02 Analog Devices, Inc. Robust ESD cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950109B2 (ja) * 1976-07-12 1984-12-06 日本電気株式会社 半導体装置
JPS586307B2 (ja) * 1976-12-16 1983-02-03 富士電機株式会社 半導体装置
JPS57208170A (en) * 1981-06-17 1982-12-21 Nec Corp Composite transistor

Also Published As

Publication number Publication date
JPS58199563A (ja) 1983-11-19

Similar Documents

Publication Publication Date Title
US4994880A (en) Semiconductor device constituting bipolar transistor
JPH0228895B2 (enrdf_load_stackoverflow)
JP2002064106A (ja) 半導体装置
JPS611857U (ja) 放射トリガ式サイリスタ
JPH0712045B2 (ja) 電流検出素子
JPH041732Y2 (enrdf_load_stackoverflow)
JP2000100826A (ja) パワートランジスタ及びそれを用いた半導体集積回路装置
JP4287939B2 (ja) 半導体素子
JPH0412673Y2 (enrdf_load_stackoverflow)
KR920003801B1 (ko) 프로그램가능 반도체 셀 구조
JPH0438519Y2 (enrdf_load_stackoverflow)
JPH025532Y2 (enrdf_load_stackoverflow)
JPS59129475A (ja) ロ−ノイズ半導体装置
JP4414580B2 (ja) 半導体発光素子
JP2910456B2 (ja) マスタースライス方式集積回路装置
JP3253468B2 (ja) 半導体装置
JP3656657B2 (ja) マルチセル型バイポーラトランジスタ
JPH05218056A (ja) パワートランジスタ
JPH0658960B2 (ja) 小電流サイリスタ
JPH0517702B2 (enrdf_load_stackoverflow)
JPS62216266A (ja) 可変耐圧ダイオ−ド
JP2004119577A (ja) バイポーラトランジスタ
JPS58147065A (ja) 大容量トランジスタ
JPH0588542B2 (enrdf_load_stackoverflow)
JPH03108726A (ja) 過電流制限型半導体装置