JPH0228255B2 - - Google Patents

Info

Publication number
JPH0228255B2
JPH0228255B2 JP60030161A JP3016185A JPH0228255B2 JP H0228255 B2 JPH0228255 B2 JP H0228255B2 JP 60030161 A JP60030161 A JP 60030161A JP 3016185 A JP3016185 A JP 3016185A JP H0228255 B2 JPH0228255 B2 JP H0228255B2
Authority
JP
Japan
Prior art keywords
gate
layer
sio
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60030161A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61190985A (ja
Inventor
Yoshimi Yamashita
Kinshiro Kosemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60030161A priority Critical patent/JPS61190985A/ja
Publication of JPS61190985A publication Critical patent/JPS61190985A/ja
Publication of JPH0228255B2 publication Critical patent/JPH0228255B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60030161A 1985-02-20 1985-02-20 半導体装置 Granted JPS61190985A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60030161A JPS61190985A (ja) 1985-02-20 1985-02-20 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60030161A JPS61190985A (ja) 1985-02-20 1985-02-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS61190985A JPS61190985A (ja) 1986-08-25
JPH0228255B2 true JPH0228255B2 (enrdf_load_stackoverflow) 1990-06-22

Family

ID=12296030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60030161A Granted JPS61190985A (ja) 1985-02-20 1985-02-20 半導体装置

Country Status (1)

Country Link
JP (1) JPS61190985A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700462A (en) * 1986-10-08 1987-10-20 Hughes Aircraft Company Process for making a T-gated transistor
JPH02126628A (ja) * 1988-11-07 1990-05-15 Canon Inc 位置合わせ装置及びその方法
US5139968A (en) * 1989-03-03 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a t-shaped gate electrode
JP3093487B2 (ja) * 1992-10-28 2000-10-03 松下電子工業株式会社 半導体装置およびその製造方法
JP3170141B2 (ja) * 1993-07-27 2001-05-28 株式会社東芝 半導体装置
JP2000138237A (ja) * 1998-11-02 2000-05-16 Nec Corp 感光性有機膜を有する半導体装置及びその製造方法
KR100574911B1 (ko) * 1999-01-18 2006-04-28 삼성전자주식회사 반도체 소자의 도전성 배선층 형성방법

Also Published As

Publication number Publication date
JPS61190985A (ja) 1986-08-25

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term