JPH0224025B2 - - Google Patents

Info

Publication number
JPH0224025B2
JPH0224025B2 JP59147957A JP14795784A JPH0224025B2 JP H0224025 B2 JPH0224025 B2 JP H0224025B2 JP 59147957 A JP59147957 A JP 59147957A JP 14795784 A JP14795784 A JP 14795784A JP H0224025 B2 JPH0224025 B2 JP H0224025B2
Authority
JP
Japan
Prior art keywords
superlattice structure
effect transistor
field effect
carrier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59147957A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6127681A (ja
Inventor
Zenko Hirose
Seiichi Myazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shingijutsu Kaihatsu Jigyodan filed Critical Shingijutsu Kaihatsu Jigyodan
Priority to JP14795784A priority Critical patent/JPS6127681A/ja
Publication of JPS6127681A publication Critical patent/JPS6127681A/ja
Publication of JPH0224025B2 publication Critical patent/JPH0224025B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP14795784A 1984-07-17 1984-07-17 超格子構造のチヤネル部をもつ電界効果トランジスタ Granted JPS6127681A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14795784A JPS6127681A (ja) 1984-07-17 1984-07-17 超格子構造のチヤネル部をもつ電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14795784A JPS6127681A (ja) 1984-07-17 1984-07-17 超格子構造のチヤネル部をもつ電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS6127681A JPS6127681A (ja) 1986-02-07
JPH0224025B2 true JPH0224025B2 (enrdf_load_stackoverflow) 1990-05-28

Family

ID=15441903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14795784A Granted JPS6127681A (ja) 1984-07-17 1984-07-17 超格子構造のチヤネル部をもつ電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS6127681A (enrdf_load_stackoverflow)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719888B2 (ja) * 1985-04-05 1995-03-06 セイコーエプソン株式会社 電界効果型トランジスタ及びその製造方法
JPS62279672A (ja) * 1986-05-28 1987-12-04 Kanegafuchi Chem Ind Co Ltd 半導体装置
FR2600821B1 (fr) * 1986-06-30 1988-12-30 Thomson Csf Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative
JP2709374B2 (ja) * 1986-10-08 1998-02-04 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置
JPS6394681A (ja) * 1986-10-08 1988-04-25 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置の作製方法
US4908678A (en) * 1986-10-08 1990-03-13 Semiconductor Energy Laboratory Co., Ltd. FET with a super lattice channel
JPS6394682A (ja) * 1986-10-08 1988-04-25 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置
US5051786A (en) * 1989-10-24 1991-09-24 Mcnc Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof
JP2692599B2 (ja) 1994-07-27 1997-12-17 株式会社島津製作所 レーザー非接触伸び計
US6993222B2 (en) 1999-03-03 2006-01-31 Rj Mears, Llc Optical filter device with aperiodically arranged grating elements
GB2386254A (en) 1999-03-05 2003-09-10 Nanovis Llc Superlattices
JP3373831B2 (ja) 2000-01-19 2003-02-04 岸本産業株式会社 試験片の伸び測定方法及び装置
EP1231640A4 (en) * 2000-06-27 2008-10-08 Matsushita Electric Ind Co Ltd SEMICONDUCTOR COMPONENT
KR100454199B1 (ko) 2000-11-21 2004-10-26 마츠시타 덴끼 산교 가부시키가이샤 반도체장치 및 그 제조방법
WO2005018005A1 (en) 2003-06-26 2005-02-24 Rj Mears, Llc Semiconductor device including mosfet having band-engineered superlattice
US7045377B2 (en) 2003-06-26 2006-05-16 Rj Mears, Llc Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
US7229902B2 (en) 2003-06-26 2007-06-12 Rj Mears, Llc Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction
US7586165B2 (en) 2003-06-26 2009-09-08 Mears Technologies, Inc. Microelectromechanical systems (MEMS) device including a superlattice
US7531850B2 (en) 2003-06-26 2009-05-12 Mears Technologies, Inc. Semiconductor device including a memory cell with a negative differential resistance (NDR) device
US7531828B2 (en) 2003-06-26 2009-05-12 Mears Technologies, Inc. Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions
US7535041B2 (en) 2003-06-26 2009-05-19 Mears Technologies, Inc. Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance
US7491587B2 (en) 2003-06-26 2009-02-17 Mears Technologies, Inc. Method for making a semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer
US7659539B2 (en) 2003-06-26 2010-02-09 Mears Technologies, Inc. Semiconductor device including a floating gate memory cell with a superlattice channel
US6878576B1 (en) * 2003-06-26 2005-04-12 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice
US6897472B2 (en) 2003-06-26 2005-05-24 Rj Mears, Llc Semiconductor device including MOSFET having band-engineered superlattice
US7586116B2 (en) 2003-06-26 2009-09-08 Mears Technologies, Inc. Semiconductor device having a semiconductor-on-insulator configuration and a superlattice
US7598515B2 (en) 2003-06-26 2009-10-06 Mears Technologies, Inc. Semiconductor device including a strained superlattice and overlying stress layer and related methods
US7612366B2 (en) 2003-06-26 2009-11-03 Mears Technologies, Inc. Semiconductor device including a strained superlattice layer above a stress layer
US7514328B2 (en) 2003-06-26 2009-04-07 Mears Technologies, Inc. Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween
US7446002B2 (en) 2003-06-26 2008-11-04 Mears Technologies, Inc. Method for making a semiconductor device comprising a superlattice dielectric interface layer
US7227174B2 (en) 2003-06-26 2007-06-05 Rj Mears, Llc Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
US7045813B2 (en) 2003-06-26 2006-05-16 Rj Mears, Llc Semiconductor device including a superlattice with regions defining a semiconductor junction
US7531829B2 (en) 2003-06-26 2009-05-12 Mears Technologies, Inc. Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance
US7517702B2 (en) 2005-12-22 2009-04-14 Mears Technologies, Inc. Method for making an electronic device including a poled superlattice having a net electrical dipole moment
WO2007098138A2 (en) 2006-02-21 2007-08-30 Mears Technologies, Inc. Semiconductor device comprising a lattice matching layer and associated methods
US7781827B2 (en) 2007-01-24 2010-08-24 Mears Technologies, Inc. Semiconductor device with a vertical MOSFET including a superlattice and related methods
US7928425B2 (en) 2007-01-25 2011-04-19 Mears Technologies, Inc. Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods
US7863066B2 (en) 2007-02-16 2011-01-04 Mears Technologies, Inc. Method for making a multiple-wavelength opto-electronic device including a superlattice
US7880161B2 (en) 2007-02-16 2011-02-01 Mears Technologies, Inc. Multiple-wavelength opto-electronic device including a superlattice
US7812339B2 (en) 2007-04-23 2010-10-12 Mears Technologies, Inc. Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures
CN106104805B (zh) 2013-11-22 2020-06-16 阿托梅拉公司 包括超晶格穿通停止层堆叠的垂直半导体装置和相关方法
US9716147B2 (en) 2014-06-09 2017-07-25 Atomera Incorporated Semiconductor devices with enhanced deterministic doping and related methods
US9722046B2 (en) 2014-11-25 2017-08-01 Atomera Incorporated Semiconductor device including a superlattice and replacement metal gate structure and related methods
EP3281231B1 (en) 2015-05-15 2021-11-03 Atomera Incorporated Method of fabricating semiconductor devices with superlattice and punch-through stop (pts) layers at different depths
US9721790B2 (en) 2015-06-02 2017-08-01 Atomera Incorporated Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control
EP3635789B1 (en) 2017-05-16 2022-08-10 Atomera Incorporated Semiconductor device and method including a superlattice as a gettering layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137542A (en) * 1977-04-20 1979-01-30 International Business Machines Corporation Semiconductor structure
JPS55117281A (en) * 1979-03-05 1980-09-09 Nippon Telegr & Teleph Corp <Ntt> 3[5 group compound semiconductor hetero structure mosfet
JPS5984475A (ja) * 1982-11-05 1984-05-16 Hitachi Ltd 電界効果型トランジスタ

Also Published As

Publication number Publication date
JPS6127681A (ja) 1986-02-07

Similar Documents

Publication Publication Date Title
JPH0224025B2 (enrdf_load_stackoverflow)
JP2786327B2 (ja) ヘテロ接合電界効果トランジスタ
JP2609587B2 (ja) 半導体装置
JPH0156543B2 (enrdf_load_stackoverflow)
JP2722885B2 (ja) 電界効果トランジスタ
JPH0355980B2 (enrdf_load_stackoverflow)
JPH0312769B2 (enrdf_load_stackoverflow)
JP2855775B2 (ja) 電界効果トランジスタ
JPS61276269A (ja) ヘテロ接合型電界効果トランジスタ
JP3054216B2 (ja) 半導体装置
JP2761211B2 (ja) 半導体装置
JPS6281063A (ja) 超格子電子素子
JPH0311767A (ja) 速度変調型電界効果トランジスタ
JPH01143264A (ja) 電界効果半導体素子
JPS62245681A (ja) 負性微分抵抗電界効果トランジスタ
JPH0582558A (ja) 電界効果型トランジスタ
JPH04273447A (ja) 半導体装置
JP2615714B2 (ja) ヘテロ接合電界効果トランジスタ
JPH05102190A (ja) 化合物半導体ヘテロ接合ゲート電界効果トランジスタ
JP3245657B2 (ja) ヘテロ接合型電界効果トランジスタ
JPH0638494B2 (ja) 化合物半導体装置
JPH04250635A (ja) ２次元電子ガス電界効果トランジスタの製造方法
JPS594085A (ja) 半導体装置
JPS63229763A (ja) 半導体装置
JPH05102198A (ja) 擬１次元電界効果トランジスタとその製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term