JPH0224022B2 - - Google Patents

Info

Publication number
JPH0224022B2
JPH0224022B2 JP56138176A JP13817681A JPH0224022B2 JP H0224022 B2 JPH0224022 B2 JP H0224022B2 JP 56138176 A JP56138176 A JP 56138176A JP 13817681 A JP13817681 A JP 13817681A JP H0224022 B2 JPH0224022 B2 JP H0224022B2
Authority
JP
Japan
Prior art keywords
layer
transistor
emitter
diode
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56138176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5839060A (ja
Inventor
Masami Iwasaki
Hiroshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56138176A priority Critical patent/JPS5839060A/ja
Publication of JPS5839060A publication Critical patent/JPS5839060A/ja
Publication of JPH0224022B2 publication Critical patent/JPH0224022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56138176A 1981-09-02 1981-09-02 半導体装置 Granted JPS5839060A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56138176A JPS5839060A (ja) 1981-09-02 1981-09-02 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138176A JPS5839060A (ja) 1981-09-02 1981-09-02 半導体装置

Publications (2)

Publication Number Publication Date
JPS5839060A JPS5839060A (ja) 1983-03-07
JPH0224022B2 true JPH0224022B2 (enrdf_load_html_response) 1990-05-28

Family

ID=15215816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138176A Granted JPS5839060A (ja) 1981-09-02 1981-09-02 半導体装置

Country Status (1)

Country Link
JP (1) JPS5839060A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0614417U (ja) * 1991-05-30 1994-02-25 自動車部品工業株式会社 エンジンのブローバイガス還流装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6310055A (ja) * 1986-07-01 1988-01-16 Ube Ind Ltd 溶湯注湯方法
JP5365035B2 (ja) * 2008-03-17 2013-12-11 富士電機株式会社 電力変換装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5127892B2 (enrdf_load_html_response) * 1973-06-21 1976-08-16
JPS5727052A (en) * 1980-07-25 1982-02-13 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0614417U (ja) * 1991-05-30 1994-02-25 自動車部品工業株式会社 エンジンのブローバイガス還流装置

Also Published As

Publication number Publication date
JPS5839060A (ja) 1983-03-07

Similar Documents

Publication Publication Date Title
JPH0793383B2 (ja) 半導体装置
JPS59104165A (ja) 電力用トランジスタ
JPH0224022B2 (enrdf_load_html_response)
GB2061001A (en) Semiconductor device
JPH0378787B2 (enrdf_load_html_response)
JP3469730B2 (ja) 半導体素子
JPH05267675A (ja) 半導体装置
US4398205A (en) Gate turn-off device with high turn-off gain
JPS5849104B2 (ja) 半導体スイツチ
JPS61158175A (ja) プレ−ナ型トランジスタ装置
JPS586312B2 (ja) ハンドウタイセイギヨソウチ
JPH02206174A (ja) ｐチャンネル絶縁ゲート型バイポーラトランジスタ
JPS59163865A (ja) ゲ−トタ−ンオフサイリスタ
JPS63242022A (ja) 半導体スイツチング回路
JPH0326679Y2 (enrdf_load_html_response)
JP3198266B2 (ja) 電力用半導体モジュール
JPS59207654A (ja) 半導体装置
JPS6122867B2 (enrdf_load_html_response)
JPS633168Y2 (enrdf_load_html_response)
JP2690776B2 (ja) 半導体装置
JPH0448024Y2 (enrdf_load_html_response)
JPS62144357A (ja) スイツチング用半導体装置
JPS6141247Y2 (enrdf_load_html_response)
JPH02264516A (ja) 絶縁ゲート型バイポーラトランジスタの駆動回路
JPS6024051A (ja) 半導体装置