JPH0222812A - 化合物半導体層の成長方法 - Google Patents

化合物半導体層の成長方法

Info

Publication number
JPH0222812A
JPH0222812A JP63171862A JP17186288A JPH0222812A JP H0222812 A JPH0222812 A JP H0222812A JP 63171862 A JP63171862 A JP 63171862A JP 17186288 A JP17186288 A JP 17186288A JP H0222812 A JPH0222812 A JP H0222812A
Authority
JP
Japan
Prior art keywords
growth
compound semiconductor
gaas
growing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63171862A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0573335B2 (enExample
Inventor
Sachiko Onozawa
小野沢　幸子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP63171862A priority Critical patent/JPH0222812A/ja
Publication of JPH0222812A publication Critical patent/JPH0222812A/ja
Publication of JPH0573335B2 publication Critical patent/JPH0573335B2/ja
Granted legal-status Critical Current

Links

JP63171862A 1988-07-12 1988-07-12 化合物半導体層の成長方法 Granted JPH0222812A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63171862A JPH0222812A (ja) 1988-07-12 1988-07-12 化合物半導体層の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63171862A JPH0222812A (ja) 1988-07-12 1988-07-12 化合物半導体層の成長方法

Publications (2)

Publication Number Publication Date
JPH0222812A true JPH0222812A (ja) 1990-01-25
JPH0573335B2 JPH0573335B2 (enExample) 1993-10-14

Family

ID=15931165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63171862A Granted JPH0222812A (ja) 1988-07-12 1988-07-12 化合物半導体層の成長方法

Country Status (1)

Country Link
JP (1) JPH0222812A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317941A (ja) * 2004-03-29 2005-11-10 Showa Denko Kk ｐｎ接合型化合物半導体発光素子、及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119280A (ja) * 1986-11-06 1988-05-23 Matsushita Electric Ind Co Ltd 青色発光ダイオ−ド

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119280A (ja) * 1986-11-06 1988-05-23 Matsushita Electric Ind Co Ltd 青色発光ダイオ−ド

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317941A (ja) * 2004-03-29 2005-11-10 Showa Denko Kk ｐｎ接合型化合物半導体発光素子、及びその製造方法

Also Published As

Publication number Publication date
JPH0573335B2 (enExample) 1993-10-14

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term