JPH0573333B2 - - Google Patents
Info
- Publication number
- JPH0573333B2 JPH0573333B2 JP11928088A JP11928088A JPH0573333B2 JP H0573333 B2 JPH0573333 B2 JP H0573333B2 JP 11928088 A JP11928088 A JP 11928088A JP 11928088 A JP11928088 A JP 11928088A JP H0573333 B2 JPH0573333 B2 JP H0573333B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- temperature
- growth
- compound semiconductor
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000872 buffer Substances 0.000 claims description 45
- 150000001875 compounds Chemical class 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000006173 Good's buffer Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11928088A JPH01290220A (ja) | 1988-05-18 | 1988-05-18 | 化合物半導体層の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11928088A JPH01290220A (ja) | 1988-05-18 | 1988-05-18 | 化合物半導体層の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01290220A JPH01290220A (ja) | 1989-11-22 |
| JPH0573333B2 true JPH0573333B2 (enExample) | 1993-10-14 |
Family
ID=14757475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11928088A Granted JPH01290220A (ja) | 1988-05-18 | 1988-05-18 | 化合物半導体層の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01290220A (enExample) |
-
1988
- 1988-05-18 JP JP11928088A patent/JPH01290220A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01290220A (ja) | 1989-11-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |