JPH0218614B2 - - Google Patents
Info
- Publication number
- JPH0218614B2 JPH0218614B2 JP57175203A JP17520382A JPH0218614B2 JP H0218614 B2 JPH0218614 B2 JP H0218614B2 JP 57175203 A JP57175203 A JP 57175203A JP 17520382 A JP17520382 A JP 17520382A JP H0218614 B2 JPH0218614 B2 JP H0218614B2
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- acoustic wave
- aluminum nitride
- nitride film
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 39
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 29
- 230000000644 propagated effect Effects 0.000 claims description 14
- 239000006185 dispersion Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 6
- 230000001902 propagating effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175203A JPS5964908A (ja) | 1982-10-05 | 1982-10-05 | 弾性表面波素子 |
| US06/536,926 US4516049A (en) | 1982-10-05 | 1983-09-28 | Multi-layer acoustic surface wave device having minimal delay time temperature coefficient |
| GB08326084A GB2130452A (en) | 1982-10-05 | 1983-09-29 | Acoustic surface wave device |
| DE3336281A DE3336281C2 (de) | 1982-10-05 | 1983-10-05 | SAW-Oberflächenwellenbauelement |
| FR8315873A FR2534089B1 (fr) | 1982-10-05 | 1983-10-05 | Dispositif a onde acoustique de surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175203A JPS5964908A (ja) | 1982-10-05 | 1982-10-05 | 弾性表面波素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5964908A JPS5964908A (ja) | 1984-04-13 |
| JPH0218614B2 true JPH0218614B2 (US20080094685A1-20080424-C00004.png) | 1990-04-26 |
Family
ID=15992090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57175203A Granted JPS5964908A (ja) | 1982-10-05 | 1982-10-05 | 弾性表面波素子 |
Country Status (5)
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2181917B (en) * | 1982-03-11 | 1987-11-18 | Nobuo Mikoshiba | Surface acoustic wave device |
| GB2181918B (en) * | 1982-03-11 | 1987-11-18 | Nobuo Mikoshiba | Surface acoustic wave device |
| JPS60119114A (ja) * | 1983-11-30 | 1985-06-26 | Murata Mfg Co Ltd | 表面波装置 |
| US4695986A (en) * | 1985-03-28 | 1987-09-22 | Ultrasonic Arrays, Inc. | Ultrasonic transducer component and process for making the same and assembly |
| JPS6362281A (ja) * | 1986-09-02 | 1988-03-18 | Clarion Co Ltd | 弾性表面波コンボルバ |
| JPH01233819A (ja) * | 1988-03-15 | 1989-09-19 | Fujitsu Ltd | 弾性表面波ディバイス |
| US5235233A (en) * | 1988-03-17 | 1993-08-10 | Fanuc Ltd. | Surface acoustic wave device |
| JPH01236712A (ja) * | 1988-03-17 | 1989-09-21 | Fujitsu Ltd | 弾性表面波ディバイス |
| WO1989008949A1 (fr) * | 1988-03-17 | 1989-09-21 | Fujitsu Limited | Dispositif a ondes acoustiques de surface |
| JPH0217707A (ja) * | 1988-07-05 | 1990-01-22 | Clarion Co Ltd | 広帯域弾性表面波フィルタ |
| US5215546A (en) * | 1990-09-04 | 1993-06-01 | Motorola, Inc. | Method and apparatus for SAW device passivation |
| JPH04343514A (ja) * | 1991-05-20 | 1992-11-30 | Clarion Co Ltd | 弾性表面波素子 |
| US5453652A (en) * | 1992-12-17 | 1995-09-26 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device with interdigital transducers formed on a holding substrate thereof and a method of producing the same |
| US5446330A (en) * | 1993-03-15 | 1995-08-29 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device having a lamination structure |
| US5576589A (en) * | 1994-10-13 | 1996-11-19 | Kobe Steel Usa, Inc. | Diamond surface acoustic wave devices |
| DE69611771T2 (de) * | 1995-09-01 | 2001-06-28 | Murata Manufacturing Co | Akustische Oberflächenwellenanordnung |
| US5831492A (en) * | 1995-09-15 | 1998-11-03 | Sawtek Inc. | Weighted tapered spudt saw device |
| US5818310A (en) * | 1996-08-27 | 1998-10-06 | Sawtek Inc. | Series-block and line-width weighted saw filter device |
| US6049155A (en) * | 1997-10-27 | 2000-04-11 | Lucent Technologies Inc. | Thermally tunable surface acoustic wave devices |
| DE10119293A1 (de) * | 2001-04-19 | 2002-11-21 | Stiftung Caesar | Berührungslose magnetoelastische Sensoren |
| JP2005176152A (ja) * | 2003-12-15 | 2005-06-30 | Alps Electric Co Ltd | 弾性表面波素子及びその製造方法 |
| JP4279271B2 (ja) * | 2005-06-01 | 2009-06-17 | アルプス電気株式会社 | 弾性表面波素子及びその製造方法 |
| DE112009000281T5 (de) * | 2008-02-05 | 2011-02-17 | Murata Mfg. Co., Ltd., Nagaokakyo-shi | Rand-Schallwellenvorrichtung |
| TWI381060B (zh) * | 2008-08-12 | 2013-01-01 | Univ Tatung | High frequency surface acoustic wave elements and their substrates |
| US8689426B2 (en) | 2008-12-17 | 2014-04-08 | Sand 9, Inc. | Method of manufacturing a resonating structure |
| WO2010077313A1 (en) * | 2008-12-17 | 2010-07-08 | Sand9, Inc. | Mechanical resonating structures including a temperature compensation structure |
| JP2010187373A (ja) * | 2009-01-19 | 2010-08-26 | Ngk Insulators Ltd | 複合基板及びそれを用いた弾性波デバイス |
| US9232315B2 (en) | 2011-03-16 | 2016-01-05 | Phonon Corporation | Monolithically applied heating elements on saw substrate |
| US10800649B2 (en) | 2016-11-28 | 2020-10-13 | Analog Devices International Unlimited Company | Planar processing of suspended microelectromechanical systems (MEMS) devices |
| US11722121B2 (en) * | 2017-02-14 | 2023-08-08 | Kyocera Corporation | Acoustic wave element |
| US10843920B2 (en) | 2019-03-08 | 2020-11-24 | Analog Devices International Unlimited Company | Suspended microelectromechanical system (MEMS) devices |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1363519A (en) * | 1972-08-17 | 1974-08-14 | Standard Telephones Cables Ltd | Acoustic surface wave device |
| GB1440950A (en) * | 1973-10-12 | 1976-06-30 | Mullard Ltd | Acoustic surface-wave devices |
| US3965444A (en) * | 1975-01-03 | 1976-06-22 | Raytheon Company | Temperature compensated surface acoustic wave devices |
| DE2607837C2 (de) * | 1975-03-04 | 1984-09-13 | Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto | Mehrschichten-Interdigital-Wandler für akustische Oberflächenwellen |
| US4037176A (en) * | 1975-03-18 | 1977-07-19 | Matsushita Electric Industrial Co., Ltd. | Multi-layered substrate for a surface-acoustic-wave device |
| US4194171A (en) * | 1978-07-07 | 1980-03-18 | The United States Of America As Represented By The Secretary Of The Navy | Zinc oxide on silicon device for parallel in, serial out, discrete fourier transform |
| JPS55158720A (en) * | 1979-05-28 | 1980-12-10 | Clarion Co Ltd | Surface elastic wave device |
| SU805918A1 (ru) * | 1979-09-28 | 1982-03-30 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Преобразователь поверхностных акустических волн |
| JPS56100510A (en) * | 1980-01-16 | 1981-08-12 | Clarion Co Ltd | Elastic surface wave device |
| US4358745A (en) * | 1981-03-16 | 1982-11-09 | International Business Machines Corporation | Semiconductor surface acoustic wave device |
| US4511816A (en) * | 1982-03-11 | 1985-04-16 | Nobuo Mikoshiba | Surface acoustic wave device using an elastic substrate and an aluminum nitride piezoelectric film |
-
1982
- 1982-10-05 JP JP57175203A patent/JPS5964908A/ja active Granted
-
1983
- 1983-09-28 US US06/536,926 patent/US4516049A/en not_active Expired - Lifetime
- 1983-09-29 GB GB08326084A patent/GB2130452A/en not_active Withdrawn
- 1983-10-05 FR FR8315873A patent/FR2534089B1/fr not_active Expired
- 1983-10-05 DE DE3336281A patent/DE3336281C2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5964908A (ja) | 1984-04-13 |
| FR2534089B1 (fr) | 1988-11-04 |
| GB8326084D0 (en) | 1983-11-02 |
| US4516049A (en) | 1985-05-07 |
| FR2534089A1 (fr) | 1984-04-06 |
| DE3336281A1 (de) | 1984-04-05 |
| DE3336281C2 (de) | 1995-04-20 |
| GB2130452A (en) | 1984-05-31 |
