JPH0218318B2 - - Google Patents
Info
- Publication number
- JPH0218318B2 JPH0218318B2 JP57036823A JP3682382A JPH0218318B2 JP H0218318 B2 JPH0218318 B2 JP H0218318B2 JP 57036823 A JP57036823 A JP 57036823A JP 3682382 A JP3682382 A JP 3682382A JP H0218318 B2 JPH0218318 B2 JP H0218318B2
- Authority
- JP
- Japan
- Prior art keywords
- graphite
- graphite crucible
- silicon
- crucible
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57036823A JPS58156595A (ja) | 1982-03-08 | 1982-03-08 | シリコン単結晶引上げ装置用黒鉛ルツボ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57036823A JPS58156595A (ja) | 1982-03-08 | 1982-03-08 | シリコン単結晶引上げ装置用黒鉛ルツボ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58156595A JPS58156595A (ja) | 1983-09-17 |
| JPH0218318B2 true JPH0218318B2 (OSRAM) | 1990-04-25 |
Family
ID=12480470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57036823A Granted JPS58156595A (ja) | 1982-03-08 | 1982-03-08 | シリコン単結晶引上げ装置用黒鉛ルツボ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58156595A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001031473A (ja) * | 1999-07-21 | 2001-02-06 | Toyo Tanso Kk | 黒鉛ヒーター |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5626781A (en) * | 1979-08-04 | 1981-03-14 | Hitachi Chemical Co Ltd | Manufacture of siccclad graphite material |
| JPS5632396A (en) * | 1979-08-17 | 1981-04-01 | Toshiba Ceramics Co Ltd | Silicon single crystal pulling apparatus |
| JPS5684381A (en) * | 1979-12-04 | 1981-07-09 | Toshiba Ceramics Co | Carbon silicate material |
| JPS56120584A (en) * | 1980-06-26 | 1981-09-21 | Hitachi Chemical Co Ltd | Manufacture of carbonnsic composite member |
| JPS57191292A (en) * | 1981-05-19 | 1982-11-25 | Toshiba Ceramics Co Ltd | Graphite crucible for preparing single crystal of semiconductor |
-
1982
- 1982-03-08 JP JP57036823A patent/JPS58156595A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58156595A (ja) | 1983-09-17 |
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