JPH0217872B2 - - Google Patents
Info
- Publication number
- JPH0217872B2 JPH0217872B2 JP56190370A JP19037081A JPH0217872B2 JP H0217872 B2 JPH0217872 B2 JP H0217872B2 JP 56190370 A JP56190370 A JP 56190370A JP 19037081 A JP19037081 A JP 19037081A JP H0217872 B2 JPH0217872 B2 JP H0217872B2
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- potential
- transistor
- sense amplifier
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56190370A JPS5894189A (ja) | 1981-11-27 | 1981-11-27 | ダイナミツク型半導体記憶装置 |
| EP82402139A EP0080936B1 (en) | 1981-11-27 | 1982-11-24 | Dynamic semiconductor memory device |
| US06/444,487 US4481610A (en) | 1981-11-27 | 1982-11-24 | Dynamic Semiconductor memory device |
| DE8282402139T DE3278866D1 (en) | 1981-11-27 | 1982-11-24 | Dynamic semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56190370A JPS5894189A (ja) | 1981-11-27 | 1981-11-27 | ダイナミツク型半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5894189A JPS5894189A (ja) | 1983-06-04 |
| JPH0217872B2 true JPH0217872B2 (OSRAM) | 1990-04-23 |
Family
ID=16257044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56190370A Granted JPS5894189A (ja) | 1981-11-27 | 1981-11-27 | ダイナミツク型半導体記憶装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4481610A (OSRAM) |
| EP (1) | EP0080936B1 (OSRAM) |
| JP (1) | JPS5894189A (OSRAM) |
| DE (1) | DE3278866D1 (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132492A (ja) * | 1982-12-22 | 1984-07-30 | Fujitsu Ltd | 半導体記憶装置 |
| US5122914A (en) * | 1984-01-17 | 1992-06-16 | Norand Corporation | Disk drive system with transportable carrier and mounting assembly |
| JPS6122494A (ja) * | 1984-07-10 | 1986-01-31 | Nec Corp | アクテイブプルアツプ回路 |
| JPH0612612B2 (ja) * | 1987-03-06 | 1994-02-16 | 株式会社東芝 | 半導体記憶装置 |
| JPH0715952B2 (ja) * | 1988-04-13 | 1995-02-22 | 株式会社東芝 | 半導体記憶装置 |
| US5270967A (en) * | 1991-01-16 | 1993-12-14 | National Semiconductor Corporation | Refreshing ferroelectric capacitors |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1576970A (en) * | 1977-12-22 | 1980-10-15 | Signetics Corp | Sense and refresh amplifier |
| US4363111A (en) * | 1980-10-06 | 1982-12-07 | Heightley John D | Dummy cell arrangement for an MOS memory |
| JPS57109187A (en) * | 1980-12-25 | 1982-07-07 | Mitsubishi Electric Corp | Re-charging circuit |
-
1981
- 1981-11-27 JP JP56190370A patent/JPS5894189A/ja active Granted
-
1982
- 1982-11-24 EP EP82402139A patent/EP0080936B1/en not_active Expired
- 1982-11-24 US US06/444,487 patent/US4481610A/en not_active Expired - Fee Related
- 1982-11-24 DE DE8282402139T patent/DE3278866D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5894189A (ja) | 1983-06-04 |
| EP0080936A2 (en) | 1983-06-08 |
| EP0080936B1 (en) | 1988-08-03 |
| DE3278866D1 (en) | 1988-09-08 |
| US4481610A (en) | 1984-11-06 |
| EP0080936A3 (en) | 1985-11-06 |
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