JPS57109187A - Re-charging circuit - Google Patents

Re-charging circuit

Info

Publication number
JPS57109187A
JPS57109187A JP55188803A JP18880380A JPS57109187A JP S57109187 A JPS57109187 A JP S57109187A JP 55188803 A JP55188803 A JP 55188803A JP 18880380 A JP18880380 A JP 18880380A JP S57109187 A JPS57109187 A JP S57109187A
Authority
JP
Japan
Prior art keywords
node
level
phi4
vth
sensitivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55188803A
Other languages
Japanese (ja)
Other versions
JPS6141075B2 (en
Inventor
Makoto Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55188803A priority Critical patent/JPS57109187A/en
Publication of JPS57109187A publication Critical patent/JPS57109187A/en
Publication of JPS6141075B2 publication Critical patent/JPS6141075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To prevent the lowering in sensitivity of amplifier, by storing the charge on bit lines, when a drive timing pulse has a negative noise, in a sense amplifier of MOS dynamic RAM. CONSTITUTION:A driving timing pulse phi1 is at H level in timing P7, a bit line HA of a node A and a bit line HB of a node B are precharged to a power supply voltage V, and a node C is charged to V-VTH through a transistor T6. When phi5 changes from H to L level after phi4 is at L level, a negative noise is applied to the phi4 through a capacitor C5, the node C is lowered negative with a C1 and charges are applied through the T6. Further, when the phi4 returns to L level, the node C is increased to the level more than V-VTH with the C1. Thus, no charge is moved to the node C from a line HB through the T6, and the sensitivity of the sense amplifier is not lowered.
JP55188803A 1980-12-25 1980-12-25 Re-charging circuit Granted JPS57109187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188803A JPS57109187A (en) 1980-12-25 1980-12-25 Re-charging circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188803A JPS57109187A (en) 1980-12-25 1980-12-25 Re-charging circuit

Publications (2)

Publication Number Publication Date
JPS57109187A true JPS57109187A (en) 1982-07-07
JPS6141075B2 JPS6141075B2 (en) 1986-09-12

Family

ID=16230070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188803A Granted JPS57109187A (en) 1980-12-25 1980-12-25 Re-charging circuit

Country Status (1)

Country Link
JP (1) JPS57109187A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894189A (en) * 1981-11-27 1983-06-04 Fujitsu Ltd Dynamic type semiconductor storage device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04129364U (en) * 1991-05-20 1992-11-26 テクノスーパーライナー技術研究組合 Air-cussion boat bow seal structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894189A (en) * 1981-11-27 1983-06-04 Fujitsu Ltd Dynamic type semiconductor storage device
JPH0217872B2 (en) * 1981-11-27 1990-04-23 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS6141075B2 (en) 1986-09-12

Similar Documents

Publication Publication Date Title
GB1355009A (en) Electrical circuit for reducing a voltage
EP0326708A3 (en) Semiconductor memory circuit with improved bit line precharge circuit
JPS5694838A (en) Driving circuit
JPS56129570A (en) Booster circuit
GB1431504A (en) Fet threshold compensating bias circuit
JPS56165982A (en) Static type memory circuit
IE830569L (en) Single transistor, single capacitor mos random access memory
JPS57109187A (en) Re-charging circuit
EP0050772A3 (en) Jfet dynamic memory
JPS6436215A (en) Clamp circuit
JPS5710534A (en) High-voltage mos inverter and its driving method
JPS6016035B2 (en) Width increase circuit
SU677092A1 (en) Peak detector
JPS5628522A (en) Pulse generating circuit
JPS5610275A (en) Power source device for cell clock
GB1307838A (en) Apparatus for and a method of reducing the effect of noise in the output current of a photoemissive cell
JPS5718080A (en) Readout and rewrite-in method for dynamic mos semiconductor memory
JPS53105324A (en) Semiconductor dynamic memory unut
JPS56111188A (en) Semiconductor storage device
JPS54124665A (en) Sense amplifier
JPS55115730A (en) Switching circuit
JPS576582A (en) Controller for speed of motor
SU525247A1 (en) Amplifier-shaper pulses on TIR transistors
JPS55121780A (en) Solid state pickup device
JPS5275257A (en) Matrix selection driving circuit