JPS56111188A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS56111188A
JPS56111188A JP1265880A JP1265880A JPS56111188A JP S56111188 A JPS56111188 A JP S56111188A JP 1265880 A JP1265880 A JP 1265880A JP 1265880 A JP1265880 A JP 1265880A JP S56111188 A JPS56111188 A JP S56111188A
Authority
JP
Japan
Prior art keywords
node
sense amplifier
memory section
voltage
readout
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1265880A
Other languages
Japanese (ja)
Other versions
JPS603709B2 (en
Inventor
Kenichi Nagao
Tomotaka Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55012658A priority Critical patent/JPS603709B2/en
Publication of JPS56111188A publication Critical patent/JPS56111188A/en
Publication of JPS603709B2 publication Critical patent/JPS603709B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To speed up the information readout with a simple constitution, by applying the output of memory section to a sense amplifier via the voltage set means setting a voltage near the threshold value of the sense amplifier at precharge period. CONSTITUTION:FETs 13 and 17 of the memory 11 are respectively ON and OFF with the signal phiT1 at precharge period T1 for precharge and FETs 22 and 24 of a voltage set circuit 25 connecting the memory section 11 and the sense amplifier 16 via a capacitor 20 are both ON. Thus, the node 19 of the circuit 25 is set to somewhat low level than a threshold voltage Vth1 of the amplifier 26 and the output of the amplifier 16 is 0 volt, and the node 19 and the node 15 of the memory section 11 are coupled with the capacitor of a given potential difference. Thus, when the level change of the node 15 of the memory section 11 is started at readout, the voltage of a node 19 is immediately reached to the threshold voltage Vth1, allowing the readout of information by the sense amplifier with a simple constitution in high speed.
JP55012658A 1980-02-05 1980-02-05 semiconductor storage device Expired JPS603709B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55012658A JPS603709B2 (en) 1980-02-05 1980-02-05 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55012658A JPS603709B2 (en) 1980-02-05 1980-02-05 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS56111188A true JPS56111188A (en) 1981-09-02
JPS603709B2 JPS603709B2 (en) 1985-01-30

Family

ID=11811451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55012658A Expired JPS603709B2 (en) 1980-02-05 1980-02-05 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS603709B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399820A2 (en) * 1989-05-25 1990-11-28 Sony Corporation Semiconductor memories
JPH04326814A (en) * 1991-04-26 1992-11-16 Toshiba Corp Logic circuit
JPH08321190A (en) * 1995-04-28 1996-12-03 Sgs Thomson Microelectron Srl Sense amplifier circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399820A2 (en) * 1989-05-25 1990-11-28 Sony Corporation Semiconductor memories
JPH04326814A (en) * 1991-04-26 1992-11-16 Toshiba Corp Logic circuit
JP2566067B2 (en) * 1991-04-26 1996-12-25 株式会社東芝 Logic circuit
JPH08321190A (en) * 1995-04-28 1996-12-03 Sgs Thomson Microelectron Srl Sense amplifier circuit
US5982666A (en) * 1995-04-28 1999-11-09 Stmicroelectronics S.R.L. Sense amplifier circuit for semiconductor memory devices

Also Published As

Publication number Publication date
JPS603709B2 (en) 1985-01-30

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