JPS56111188A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS56111188A JPS56111188A JP1265880A JP1265880A JPS56111188A JP S56111188 A JPS56111188 A JP S56111188A JP 1265880 A JP1265880 A JP 1265880A JP 1265880 A JP1265880 A JP 1265880A JP S56111188 A JPS56111188 A JP S56111188A
- Authority
- JP
- Japan
- Prior art keywords
- node
- sense amplifier
- memory section
- voltage
- readout
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To speed up the information readout with a simple constitution, by applying the output of memory section to a sense amplifier via the voltage set means setting a voltage near the threshold value of the sense amplifier at precharge period. CONSTITUTION:FETs 13 and 17 of the memory 11 are respectively ON and OFF with the signal phiT1 at precharge period T1 for precharge and FETs 22 and 24 of a voltage set circuit 25 connecting the memory section 11 and the sense amplifier 16 via a capacitor 20 are both ON. Thus, the node 19 of the circuit 25 is set to somewhat low level than a threshold voltage Vth1 of the amplifier 26 and the output of the amplifier 16 is 0 volt, and the node 19 and the node 15 of the memory section 11 are coupled with the capacitor of a given potential difference. Thus, when the level change of the node 15 of the memory section 11 is started at readout, the voltage of a node 19 is immediately reached to the threshold voltage Vth1, allowing the readout of information by the sense amplifier with a simple constitution in high speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55012658A JPS603709B2 (en) | 1980-02-05 | 1980-02-05 | semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55012658A JPS603709B2 (en) | 1980-02-05 | 1980-02-05 | semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56111188A true JPS56111188A (en) | 1981-09-02 |
JPS603709B2 JPS603709B2 (en) | 1985-01-30 |
Family
ID=11811451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55012658A Expired JPS603709B2 (en) | 1980-02-05 | 1980-02-05 | semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS603709B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0399820A2 (en) * | 1989-05-25 | 1990-11-28 | Sony Corporation | Semiconductor memories |
JPH04326814A (en) * | 1991-04-26 | 1992-11-16 | Toshiba Corp | Logic circuit |
JPH08321190A (en) * | 1995-04-28 | 1996-12-03 | Sgs Thomson Microelectron Srl | Sense amplifier circuit |
-
1980
- 1980-02-05 JP JP55012658A patent/JPS603709B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0399820A2 (en) * | 1989-05-25 | 1990-11-28 | Sony Corporation | Semiconductor memories |
JPH04326814A (en) * | 1991-04-26 | 1992-11-16 | Toshiba Corp | Logic circuit |
JP2566067B2 (en) * | 1991-04-26 | 1996-12-25 | 株式会社東芝 | Logic circuit |
JPH08321190A (en) * | 1995-04-28 | 1996-12-03 | Sgs Thomson Microelectron Srl | Sense amplifier circuit |
US5982666A (en) * | 1995-04-28 | 1999-11-09 | Stmicroelectronics S.R.L. | Sense amplifier circuit for semiconductor memory devices |
Also Published As
Publication number | Publication date |
---|---|
JPS603709B2 (en) | 1985-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3949381A (en) | Differential charge transfer sense amplifier | |
JPS5619586A (en) | Semiconductor memory unit | |
JPS56129570A (en) | Booster circuit | |
IE813069L (en) | Buffer circuit | |
EP0151248A3 (en) | High voltage circuit | |
JPS56165982A (en) | Static type memory circuit | |
IE830569L (en) | Single transistor, single capacitor mos random access memory | |
JPS5372429A (en) | Non-volatile semiconductor memory unit | |
KR880006698A (en) | I / O circuit of SeaMOS semiconductor memory device | |
JPS56111188A (en) | Semiconductor storage device | |
JPS55136723A (en) | Booster circuit | |
EP0049462A3 (en) | Memory device | |
JPS5577088A (en) | Nonvolatile semiconductor memory unit | |
JPS578988A (en) | Semiconductor memory | |
JPS5641593A (en) | Semiconductor memory unit | |
JPS56107387A (en) | Semiconductor storage device | |
JPS5512576A (en) | Integrated memory cell | |
JPS5778695A (en) | Semiconductor storage device | |
JPS5791029A (en) | Power-on reset circuit | |
JPS55153194A (en) | Integrated semiconductor memory unit | |
DE3878784D1 (en) | SEMICONDUCTOR MEMORY WITH A SIGNAL CHANGE DETECTION CIRCUIT. | |
JPS57195387A (en) | Data lien precharging system of memory integrated circuit | |
JPS56114198A (en) | Semiconductor circuit | |
JPS57123596A (en) | Semiconductor storage circuit device | |
JPS5720992A (en) | Storage device |