JPH02170536A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH02170536A
JPH02170536A JP63326687A JP32668788A JPH02170536A JP H02170536 A JPH02170536 A JP H02170536A JP 63326687 A JP63326687 A JP 63326687A JP 32668788 A JP32668788 A JP 32668788A JP H02170536 A JPH02170536 A JP H02170536A
Authority
JP
Japan
Prior art keywords
layer
insulating layer
tungsten
wiring
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63326687A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0577331B2 (enExample
Inventor
Yasuhisa Sato
泰久 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63326687A priority Critical patent/JPH02170536A/ja
Priority to US07/401,690 priority patent/US4983543A/en
Priority to EP95105869A priority patent/EP0665589B1/en
Priority to DE68928873T priority patent/DE68928873T2/de
Priority to EP89116458A priority patent/EP0359109B1/en
Priority to DE68928748T priority patent/DE68928748T2/de
Priority to KR1019890012954A priority patent/KR920006573B1/ko
Publication of JPH02170536A publication Critical patent/JPH02170536A/ja
Publication of JPH0577331B2 publication Critical patent/JPH0577331B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP63326687A 1988-09-07 1988-12-23 半導体装置 Granted JPH02170536A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP63326687A JPH02170536A (ja) 1988-12-23 1988-12-23 半導体装置
US07/401,690 US4983543A (en) 1988-09-07 1989-09-01 Method of manufacturing a semiconductor integrated circuit having an interconnection wire embedded in a protective layer covering the semiconductor integrated circuit
EP95105869A EP0665589B1 (en) 1988-09-07 1989-09-06 Method of manufacturing a semiconductor integrated circuit having an interconnection wire embedded in a protective layer covering the semiconductor integrated circuit
DE68928873T DE68928873T2 (de) 1988-09-07 1989-09-06 Herstellungsverfahren für eine integrierte Halbleiterschaltung mit einem Verbundungsleiter, der in einer Schutzschicht auf der integriertere Halbleiterschaltung eingebettet ist
EP89116458A EP0359109B1 (en) 1988-09-07 1989-09-06 Method of manufacturing a semiconductor integrated circuit having an interconnection wire embedded in a protective layer covering the semiconductor integrated circuit
DE68928748T DE68928748T2 (de) 1988-09-07 1989-09-06 Verfahren zum Herstellen einer integrierten Halbleiterschaltung mit einem in einer Schutzschicht integrierten Verbindungsleiter
KR1019890012954A KR920006573B1 (ko) 1988-09-07 1989-09-07 보호층내에 배선을 매설한 반도체 직접회로의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63326687A JPH02170536A (ja) 1988-12-23 1988-12-23 半導体装置

Publications (2)

Publication Number Publication Date
JPH02170536A true JPH02170536A (ja) 1990-07-02
JPH0577331B2 JPH0577331B2 (enExample) 1993-10-26

Family

ID=18190537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63326687A Granted JPH02170536A (ja) 1988-09-07 1988-12-23 半導体装置

Country Status (1)

Country Link
JP (1) JPH02170536A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020029618A (ja) * 2018-08-20 2020-02-27 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 周期的堆積プロセスによって基材の誘電体表面上にモリブデン金属膜を堆積させる方法および関連する半導体デバイス構造
US11908736B2 (en) 2017-08-30 2024-02-20 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US12119228B2 (en) 2018-01-19 2024-10-15 Asm Ip Holding B.V. Deposition method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021009939A (ja) * 2019-07-02 2021-01-28 株式会社デンソー ソレノイド

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11908736B2 (en) 2017-08-30 2024-02-20 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US12119228B2 (en) 2018-01-19 2024-10-15 Asm Ip Holding B.V. Deposition method
JP2020029618A (ja) * 2018-08-20 2020-02-27 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 周期的堆積プロセスによって基材の誘電体表面上にモリブデン金属膜を堆積させる方法および関連する半導体デバイス構造

Also Published As

Publication number Publication date
JPH0577331B2 (enExample) 1993-10-26

Similar Documents

Publication Publication Date Title
JPH04321224A (ja) コンタクトを形成する方法
JP2785768B2 (ja) 半導体装置の製造方法
US5683938A (en) Method for filling contact holes with metal by two-step deposition
US4960727A (en) Method for forming a dielectric filled trench
US5607878A (en) Contact plug forming method
JPH02170536A (ja) 半導体装置
EP0026953B1 (en) Method of manufacturing a semiconductor device
JPH03248534A (ja) 半導体素子の製造方法
CN1110848C (zh) 在半导体衬底中制造平面绝缘沟槽的方法
JP2702007B2 (ja) 半導体装置の製造方法
US5324536A (en) Method of forming a multilayered structure
JPH01258439A (ja) 半導体装置およびその製造方法
JP2782912B2 (ja) 半導体装置の製造方法
JPH01129439A (ja) 半導体装置の製造方法
JPH0310231B2 (enExample)
US20040253834A1 (en) Method for fabricating a trench isolation structure
JPH04277649A (ja) 半導体装置の製造方法
JP2727574B2 (ja) 半導体装置の製造方法
JPH03159124A (ja) 半導体装置の製造方法
JPH04127425A (ja) 半導体集積回路の製造方法
JP3206944B2 (ja) 半導体装置
JPH043961A (ja) 配線形成方法
JPH06268077A (ja) 半導体装置の製造方法
JPS6320018B2 (enExample)
JPS6281728A (ja) 素子分離領域の形成方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees