JPH0215054B2 - - Google Patents

Info

Publication number
JPH0215054B2
JPH0215054B2 JP58165269A JP16526983A JPH0215054B2 JP H0215054 B2 JPH0215054 B2 JP H0215054B2 JP 58165269 A JP58165269 A JP 58165269A JP 16526983 A JP16526983 A JP 16526983A JP H0215054 B2 JPH0215054 B2 JP H0215054B2
Authority
JP
Japan
Prior art keywords
formula
group
resist
resist material
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58165269A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6057833A (ja
Inventor
Haruyori Tanaka
Masao Morita
Saburo Imamura
Toshiaki Tamamura
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58165269A priority Critical patent/JPS6057833A/ja
Publication of JPS6057833A publication Critical patent/JPS6057833A/ja
Publication of JPH0215054B2 publication Critical patent/JPH0215054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Polymers (AREA)
JP58165269A 1983-09-09 1983-09-09 レジスト材料 Granted JPS6057833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165269A JPS6057833A (ja) 1983-09-09 1983-09-09 レジスト材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165269A JPS6057833A (ja) 1983-09-09 1983-09-09 レジスト材料

Publications (2)

Publication Number Publication Date
JPS6057833A JPS6057833A (ja) 1985-04-03
JPH0215054B2 true JPH0215054B2 (enExample) 1990-04-10

Family

ID=15809119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165269A Granted JPS6057833A (ja) 1983-09-09 1983-09-09 レジスト材料

Country Status (1)

Country Link
JP (1) JPS6057833A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
JP2608429B2 (ja) * 1987-11-09 1997-05-07 東レ・ダウコーニング・シリコーン株式会社 パターン形成用材料およびパターン形成方法
DE10026432A1 (de) 2000-05-29 2002-02-14 3M Espe Ag Präpolymere (Meth)acrylate mit polycyclischen oder aromatischen Segmenten

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207041A (ja) * 1982-05-28 1983-12-02 Nec Corp 放射線感応性高分子レジスト
JPS59193451A (ja) * 1983-04-18 1984-11-02 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成用材料及びパタ−ン形成方法
JPS6017443A (ja) * 1983-07-11 1985-01-29 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成用材料及びパタ−ン形成方法

Also Published As

Publication number Publication date
JPS6057833A (ja) 1985-04-03

Similar Documents

Publication Publication Date Title
EP0122398B1 (en) Pattern forming material and method for forming pattern therewith
EP0067066B2 (en) Dry-developing resist composition
US4286049A (en) Method of forming a negative resist pattern
JPS60238827A (ja) 感光性樹脂組成物
JPH0215054B2 (enExample)
JPS58207041A (ja) 放射線感応性高分子レジスト
JPS59198446A (ja) 感光性樹脂組成物及びその使用方法
JPS6098431A (ja) パタン形成材料及びパタン形成方法
JPS6120031A (ja) レジスト材料およびその製造方法
JPS60212756A (ja) パタン形成材料及びパタン形成方法
JPS62212645A (ja) レジスト材料
JPS6017443A (ja) パタ−ン形成用材料及びパタ−ン形成方法
JPS60220341A (ja) 感光性ホトレジスト組成物及びパタ−ン形成方法
JPS58105142A (ja) 遠紫外線感応性レジスト材料及びその使用方法
JPH0521227B2 (enExample)
JPS6273250A (ja) パタ−ン形成用材料およびパタ−ン形成方法
JPS62123451A (ja) 放射線感応性ネガ型レジスト材料
JPS6058465B2 (ja) 微細パタ−ン形成法
JPS62172342A (ja) パタ−ン形成用材料
JPS59148056A (ja) 高エネルギ−線感応材料及びその使用方法
JPS59192245A (ja) レジスト材料
JPS62269138A (ja) パタ−ン形成用材料及びパタ−ン形成方法
JPS6197651A (ja) パタ−ン形成用材料及びパタ−ン形成方法
JPS5816234A (ja) ネガ形高エネルギ−線レジストの増感方法
JPS59193451A (ja) パタ−ン形成用材料及びパタ−ン形成方法