JPH0215054B2 - - Google Patents
Info
- Publication number
- JPH0215054B2 JPH0215054B2 JP58165269A JP16526983A JPH0215054B2 JP H0215054 B2 JPH0215054 B2 JP H0215054B2 JP 58165269 A JP58165269 A JP 58165269A JP 16526983 A JP16526983 A JP 16526983A JP H0215054 B2 JPH0215054 B2 JP H0215054B2
- Authority
- JP
- Japan
- Prior art keywords
- formula
- group
- resist
- resist material
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Silicon Polymers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58165269A JPS6057833A (ja) | 1983-09-09 | 1983-09-09 | レジスト材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58165269A JPS6057833A (ja) | 1983-09-09 | 1983-09-09 | レジスト材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6057833A JPS6057833A (ja) | 1985-04-03 |
| JPH0215054B2 true JPH0215054B2 (enExample) | 1990-04-10 |
Family
ID=15809119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58165269A Granted JPS6057833A (ja) | 1983-09-09 | 1983-09-09 | レジスト材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6057833A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4732841A (en) * | 1986-03-24 | 1988-03-22 | Fairchild Semiconductor Corporation | Tri-level resist process for fine resolution photolithography |
| JP2608429B2 (ja) * | 1987-11-09 | 1997-05-07 | 東レ・ダウコーニング・シリコーン株式会社 | パターン形成用材料およびパターン形成方法 |
| DE10026432A1 (de) | 2000-05-29 | 2002-02-14 | 3M Espe Ag | Präpolymere (Meth)acrylate mit polycyclischen oder aromatischen Segmenten |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58207041A (ja) * | 1982-05-28 | 1983-12-02 | Nec Corp | 放射線感応性高分子レジスト |
| JPS59193451A (ja) * | 1983-04-18 | 1984-11-02 | Nippon Telegr & Teleph Corp <Ntt> | パタ−ン形成用材料及びパタ−ン形成方法 |
| JPS6017443A (ja) * | 1983-07-11 | 1985-01-29 | Nippon Telegr & Teleph Corp <Ntt> | パタ−ン形成用材料及びパタ−ン形成方法 |
-
1983
- 1983-09-09 JP JP58165269A patent/JPS6057833A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6057833A (ja) | 1985-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0122398B1 (en) | Pattern forming material and method for forming pattern therewith | |
| EP0067066B2 (en) | Dry-developing resist composition | |
| US4286049A (en) | Method of forming a negative resist pattern | |
| JPS60238827A (ja) | 感光性樹脂組成物 | |
| JPH0215054B2 (enExample) | ||
| JPS58207041A (ja) | 放射線感応性高分子レジスト | |
| JPS59198446A (ja) | 感光性樹脂組成物及びその使用方法 | |
| JPS6098431A (ja) | パタン形成材料及びパタン形成方法 | |
| JPS6120031A (ja) | レジスト材料およびその製造方法 | |
| JPS60212756A (ja) | パタン形成材料及びパタン形成方法 | |
| JPS62212645A (ja) | レジスト材料 | |
| JPS6017443A (ja) | パタ−ン形成用材料及びパタ−ン形成方法 | |
| JPS60220341A (ja) | 感光性ホトレジスト組成物及びパタ−ン形成方法 | |
| JPS58105142A (ja) | 遠紫外線感応性レジスト材料及びその使用方法 | |
| JPH0521227B2 (enExample) | ||
| JPS6273250A (ja) | パタ−ン形成用材料およびパタ−ン形成方法 | |
| JPS62123451A (ja) | 放射線感応性ネガ型レジスト材料 | |
| JPS6058465B2 (ja) | 微細パタ−ン形成法 | |
| JPS62172342A (ja) | パタ−ン形成用材料 | |
| JPS59148056A (ja) | 高エネルギ−線感応材料及びその使用方法 | |
| JPS59192245A (ja) | レジスト材料 | |
| JPS62269138A (ja) | パタ−ン形成用材料及びパタ−ン形成方法 | |
| JPS6197651A (ja) | パタ−ン形成用材料及びパタ−ン形成方法 | |
| JPS5816234A (ja) | ネガ形高エネルギ−線レジストの増感方法 | |
| JPS59193451A (ja) | パタ−ン形成用材料及びパタ−ン形成方法 |