JPS6057833A - レジスト材料 - Google Patents

レジスト材料

Info

Publication number
JPS6057833A
JPS6057833A JP58165269A JP16526983A JPS6057833A JP S6057833 A JPS6057833 A JP S6057833A JP 58165269 A JP58165269 A JP 58165269A JP 16526983 A JP16526983 A JP 16526983A JP S6057833 A JPS6057833 A JP S6057833A
Authority
JP
Japan
Prior art keywords
polyphenylsilsesquioxane
resist material
resist
group
production example
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58165269A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0215054B2 (enExample
Inventor
Haruyori Tanaka
啓順 田中
Masao Morita
雅夫 森田
Saburo Imamura
三郎 今村
Toshiaki Tamamura
敏昭 玉村
Osamu Kogure
小暮　攻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58165269A priority Critical patent/JPS6057833A/ja
Publication of JPS6057833A publication Critical patent/JPS6057833A/ja
Publication of JPH0215054B2 publication Critical patent/JPH0215054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Polymers (AREA)
JP58165269A 1983-09-09 1983-09-09 レジスト材料 Granted JPS6057833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165269A JPS6057833A (ja) 1983-09-09 1983-09-09 レジスト材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165269A JPS6057833A (ja) 1983-09-09 1983-09-09 レジスト材料

Publications (2)

Publication Number Publication Date
JPS6057833A true JPS6057833A (ja) 1985-04-03
JPH0215054B2 JPH0215054B2 (enExample) 1990-04-10

Family

ID=15809119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165269A Granted JPS6057833A (ja) 1983-09-09 1983-09-09 レジスト材料

Country Status (1)

Country Link
JP (1) JPS6057833A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
JPH01123229A (ja) * 1987-11-09 1989-05-16 Toray Silicone Co Ltd パターン形成用材料およびパターン形成方法
US6852795B2 (en) 2000-05-29 2005-02-08 3M Espe Ag Prepolymeric (meth)acrylates with polycyclic or aromatic segments

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207041A (ja) * 1982-05-28 1983-12-02 Nec Corp 放射線感応性高分子レジスト
JPS59193451A (ja) * 1983-04-18 1984-11-02 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成用材料及びパタ−ン形成方法
JPS6017443A (ja) * 1983-07-11 1985-01-29 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成用材料及びパタ−ン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207041A (ja) * 1982-05-28 1983-12-02 Nec Corp 放射線感応性高分子レジスト
JPS59193451A (ja) * 1983-04-18 1984-11-02 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成用材料及びパタ−ン形成方法
JPS6017443A (ja) * 1983-07-11 1985-01-29 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成用材料及びパタ−ン形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
JPH01123229A (ja) * 1987-11-09 1989-05-16 Toray Silicone Co Ltd パターン形成用材料およびパターン形成方法
US6852795B2 (en) 2000-05-29 2005-02-08 3M Espe Ag Prepolymeric (meth)acrylates with polycyclic or aromatic segments

Also Published As

Publication number Publication date
JPH0215054B2 (enExample) 1990-04-10

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