JPH021386B2 - - Google Patents

Info

Publication number
JPH021386B2
JPH021386B2 JP58004456A JP445683A JPH021386B2 JP H021386 B2 JPH021386 B2 JP H021386B2 JP 58004456 A JP58004456 A JP 58004456A JP 445683 A JP445683 A JP 445683A JP H021386 B2 JPH021386 B2 JP H021386B2
Authority
JP
Japan
Prior art keywords
layer
cladding layer
optical waveguide
conductivity type
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58004456A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59129473A (ja
Inventor
Masasue Okajima
Naoto Mogi
Juhei Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58004456A priority Critical patent/JPS59129473A/ja
Publication of JPS59129473A publication Critical patent/JPS59129473A/ja
Publication of JPH021386B2 publication Critical patent/JPH021386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Lasers (AREA)
JP58004456A 1983-01-14 1983-01-14 半導体レーザ装置の製造方法 Granted JPS59129473A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58004456A JPS59129473A (ja) 1983-01-14 1983-01-14 半導体レーザ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58004456A JPS59129473A (ja) 1983-01-14 1983-01-14 半導体レーザ装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59129473A JPS59129473A (ja) 1984-07-25
JPH021386B2 true JPH021386B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-01-11

Family

ID=11584648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58004456A Granted JPS59129473A (ja) 1983-01-14 1983-01-14 半導体レーザ装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59129473A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766992B2 (ja) * 1984-12-21 1995-07-19 ソニー株式会社 ＡｌＧａＩｎＰ系半導体レーザとその製造方法
JP2525776B2 (ja) * 1986-07-15 1996-08-21 株式会社東芝 半導体装置の製造方法
US5028563A (en) * 1989-02-24 1991-07-02 Laser Photonics, Inc. Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays
US5119388A (en) * 1989-02-24 1992-06-02 Laser Photonics, Inc. Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays
JP2586826B2 (ja) * 1994-06-21 1997-03-05 ソニー株式会社 ＡｌＧａＩｎＰ系半導体レーザとその製法
US6567443B2 (en) * 1999-09-29 2003-05-20 Xerox Corporation Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes
JP2006005167A (ja) * 2004-06-17 2006-01-05 Sumitomo Electric Ind Ltd 半導体光素子
JP4461980B2 (ja) 2004-09-22 2010-05-12 住友電気工業株式会社 半導体光素子
JP4424223B2 (ja) 2005-03-01 2010-03-03 住友電気工業株式会社 半導体光素子
JP5463760B2 (ja) 2009-07-02 2014-04-09 三菱電機株式会社 光導波路集積型半導体光素子およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode
JPS526093A (en) * 1975-07-04 1977-01-18 Hitachi Ltd Production method of semiconductor device

Also Published As

Publication number Publication date
JPS59129473A (ja) 1984-07-25

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