JPH0370391B2 - - Google Patents
Info
- Publication number
- JPH0370391B2 JPH0370391B2 JP56021657A JP2165781A JPH0370391B2 JP H0370391 B2 JPH0370391 B2 JP H0370391B2 JP 56021657 A JP56021657 A JP 56021657A JP 2165781 A JP2165781 A JP 2165781A JP H0370391 B2 JPH0370391 B2 JP H0370391B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- type
- mesa stripe
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2165781A JPS57136385A (en) | 1981-02-16 | 1981-02-16 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2165781A JPS57136385A (en) | 1981-02-16 | 1981-02-16 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57136385A JPS57136385A (en) | 1982-08-23 |
| JPH0370391B2 true JPH0370391B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-11-07 |
Family
ID=12061112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2165781A Granted JPS57136385A (en) | 1981-02-16 | 1981-02-16 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57136385A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6031287A (ja) * | 1983-07-29 | 1985-02-18 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| DE102006013442A1 (de) | 2006-03-17 | 2007-09-20 | Humboldt-Universität Zu Berlin | Halbleiterlaser und Verfahren zu seiner Herstellung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5811111B2 (ja) * | 1975-06-20 | 1983-03-01 | 松下電器産業株式会社 | 半導体レ−ザ装置の製造方法 |
| JPS556830A (en) * | 1978-06-29 | 1980-01-18 | Fujitsu Ltd | Semiconductor luminous apparatus |
-
1981
- 1981-02-16 JP JP2165781A patent/JPS57136385A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57136385A (en) | 1982-08-23 |