JPH0210586B2 - - Google Patents

Info

Publication number
JPH0210586B2
JPH0210586B2 JP58209376A JP20937683A JPH0210586B2 JP H0210586 B2 JPH0210586 B2 JP H0210586B2 JP 58209376 A JP58209376 A JP 58209376A JP 20937683 A JP20937683 A JP 20937683A JP H0210586 B2 JPH0210586 B2 JP H0210586B2
Authority
JP
Japan
Prior art keywords
layer
gate
source
resistance
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58209376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60101974A (ja
Inventor
Akio Nakagawa
Jiro Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58209376A priority Critical patent/JPS60101974A/ja
Publication of JPS60101974A publication Critical patent/JPS60101974A/ja
Publication of JPH0210586B2 publication Critical patent/JPH0210586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58209376A 1983-11-08 1983-11-08 半導体装置 Granted JPS60101974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58209376A JPS60101974A (ja) 1983-11-08 1983-11-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58209376A JPS60101974A (ja) 1983-11-08 1983-11-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS60101974A JPS60101974A (ja) 1985-06-06
JPH0210586B2 true JPH0210586B2 (cg-RX-API-DMAC7.html) 1990-03-08

Family

ID=16571893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58209376A Granted JPS60101974A (ja) 1983-11-08 1983-11-08 半導体装置

Country Status (1)

Country Link
JP (1) JPS60101974A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142873A (ja) * 1986-12-05 1988-06-15 Nec Corp 半導体装置及びその製造方法
JPH07105497B2 (ja) * 1990-01-31 1995-11-13 新技術事業団 半導体デバイス及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828753B2 (ja) * 1975-08-15 1983-06-17 株式会社日立製作所 縦形電界効果トランジスタの製造方法
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device

Also Published As

Publication number Publication date
JPS60101974A (ja) 1985-06-06

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