JPS60101974A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60101974A
JPS60101974A JP58209376A JP20937683A JPS60101974A JP S60101974 A JPS60101974 A JP S60101974A JP 58209376 A JP58209376 A JP 58209376A JP 20937683 A JP20937683 A JP 20937683A JP S60101974 A JPS60101974 A JP S60101974A
Authority
JP
Japan
Prior art keywords
layer
source
gaas
resistance
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58209376A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0210586B2 (cg-RX-API-DMAC7.html
Inventor
Akio Nakagawa
明夫 中川
Jiro Yoshida
二朗 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58209376A priority Critical patent/JPS60101974A/ja
Publication of JPS60101974A publication Critical patent/JPS60101974A/ja
Publication of JPH0210586B2 publication Critical patent/JPH0210586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58209376A 1983-11-08 1983-11-08 半導体装置 Granted JPS60101974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58209376A JPS60101974A (ja) 1983-11-08 1983-11-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58209376A JPS60101974A (ja) 1983-11-08 1983-11-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS60101974A true JPS60101974A (ja) 1985-06-06
JPH0210586B2 JPH0210586B2 (cg-RX-API-DMAC7.html) 1990-03-08

Family

ID=16571893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58209376A Granted JPS60101974A (ja) 1983-11-08 1983-11-08 半導体装置

Country Status (1)

Country Link
JP (1) JPS60101974A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142873A (ja) * 1986-12-05 1988-06-15 Nec Corp 半導体装置及びその製造方法
JPH0482275A (ja) * 1990-01-31 1992-03-16 Res Dev Corp Of Japan 半導体デバイス及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223275A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Field effect transistor and its manufacturing method
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223275A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Field effect transistor and its manufacturing method
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142873A (ja) * 1986-12-05 1988-06-15 Nec Corp 半導体装置及びその製造方法
JPH0482275A (ja) * 1990-01-31 1992-03-16 Res Dev Corp Of Japan 半導体デバイス及びその製造方法

Also Published As

Publication number Publication date
JPH0210586B2 (cg-RX-API-DMAC7.html) 1990-03-08

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