JPH02100335A - Semiconductor wafer - Google Patents
Semiconductor waferInfo
- Publication number
- JPH02100335A JPH02100335A JP25298888A JP25298888A JPH02100335A JP H02100335 A JPH02100335 A JP H02100335A JP 25298888 A JP25298888 A JP 25298888A JP 25298888 A JP25298888 A JP 25298888A JP H02100335 A JPH02100335 A JP H02100335A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- semiconductor
- region
- electrical
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000012360 testing method Methods 0.000 claims abstract description 31
- 239000000523 sample Substances 0.000 claims abstract description 26
- 235000012431 wafers Nutrition 0.000 claims description 39
- 239000004020 conductor Substances 0.000 abstract description 12
- 238000007796 conventional method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体ウェハに関し、特に、半導体ウェハの
電気テスト時に用いる全探針と半導体ウェハとの電気的
な接触状態を試験することに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to semiconductor wafers, and more particularly to testing the electrical contact between all probes used in electrical testing of semiconductor wafers and the semiconductor wafer.
従来の技術
従来の半導体ウェハには、第3図Ca>の半導体ウェハ
7に示すように、半導体素子と導電体で構成された要求
される機能を持つ領域3とその機能を外部に取り出す為
のパッド4とからなる領域2(以下、半導体チップと呼
ぶ)が全面に配列されている。BACKGROUND OF THE INVENTION Conventional semiconductor wafers include a region 3 with a required function made up of semiconductor elements and a conductor, and a region 3 for extracting the function to the outside, as shown in a semiconductor wafer 7 in FIG. A region 2 (hereinafter referred to as a semiconductor chip) consisting of pads 4 is arranged over the entire surface.
したがって、半導体ウェハ7の個々の半導体チップ2の
パッド4にブロービング用の探針を接触させて、それぞ
れ要求される機能を試験することはできるが、前記探針
とパッド4.すなわち半導体ウェハとの電気的な接触状
態を試験する為には。Therefore, it is possible to test the required functions by bringing a probing probe into contact with the pads 4 of the individual semiconductor chips 2 on the semiconductor wafer 7. In other words, to test the electrical contact with the semiconductor wafer.
半導体ウェハに接触している探針をすべて電気的に短絡
させる必要があり、半導体ウェハ7ではそれができない
。It is necessary to electrically short-circuit all the probes that are in contact with the semiconductor wafer, and this is not possible with the semiconductor wafer 7.
そこで従来は、第3図(b)に示されるように、全面を
導電体で覆った半導体ウェハ8を使い、電気テスト用の
探針を半導体ウェハ8の導電体の上に接触させて、探針
と半導体ウェハの電気的な接触状態を試験していた。Therefore, conventionally, as shown in FIG. 3(b), a semiconductor wafer 8 whose entire surface is covered with a conductive material is used, and a probe for electrical testing is brought into contact with the conductive material of the semiconductor wafer 8. The electrical contact between the needle and the semiconductor wafer was being tested.
発明が解決しようとする課題 以上述べたように、従来の半導体ウェハでは。Problems that the invention aims to solve As mentioned above, in conventional semiconductor wafers.
半導体ウェハと電気テスト用の探針との電気的な接触状
態を試験するときに、複数の半導体チップを含む半導体
ウェハと、全面を導電体で覆った半導体ウェハとを交換
しなければならないという欠点がある。A disadvantage is that when testing the electrical contact between a semiconductor wafer and an electrical test probe, a semiconductor wafer containing multiple semiconductor chips must be replaced with a semiconductor wafer whose entire surface is covered with a conductive material. There is.
本発明は従来の上記実情に鑑みてなされたものであり、
従って本発明の目的は、従来の技術に内在する上記欠点
を解消することを可能とした新規な半導体ウェハを提供
することにある。The present invention has been made in view of the above-mentioned conventional situation,
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a novel semiconductor wafer which makes it possible to eliminate the above-mentioned drawbacks inherent in the conventional technology.
発明の従来技術に対する相違点 上述した従来の半導体ウェハに対し、本発明は。Differences between the invention and the prior art The present invention differs from the conventional semiconductor wafer described above.
半導体チップとは別に、半導体ウェハの電気テスト時に
用いる全探針の半導体ウェハ上の接触位置を電気的に短
絡状態にする領域を含むという相違点を有する。It differs from the semiconductor chip in that it includes a region that electrically shorts the contact positions of all the probes on the semiconductor wafer used during electrical testing of the semiconductor wafer.
課題を解決するための手段
前記目的を達成する為に1本発明に係る半導体ウェハは
、半導体チップとは別に、半導体ウェハの電気テスト時
に用いる全探針の半導体ウェハ上の接触位置を電気的に
短絡状態にする領域を備えて構成される。Means for Solving the Problems In order to achieve the above objects, the semiconductor wafer according to the present invention electrically adjusts the contact positions of all the probes on the semiconductor wafer, which are used during electrical testing of the semiconductor wafer, in addition to the semiconductor chips. The device is configured to include a region that is short-circuited.
実施例
次に本発明をその好ましい各実施例について図面を参照
して具体的に説明する。EXAMPLES Next, preferred embodiments of the present invention will be specifically explained with reference to the drawings.
第1図は、本発明による第1の実施例を示す平面図であ
る。FIG. 1 is a plan view showing a first embodiment according to the present invention.
第1図を参照するに、半導体ウェハ1の上には。Referring to FIG. 1, on a semiconductor wafer 1.
半導体素子と導電体で構成された要求される機能を持つ
領域3とその機能を外部に取り出す為のパッド4とから
なる領域2(半導体チップ)と、半導体ウェハ1の電気
テスト時に用いる全探針の半導体ウェハ上の接触位置を
電気的に短絡状態にする導電体からなる1チップ分の領
域5とが配列されている。A region 2 (semiconductor chip) consisting of a region 3 with a required function made up of a semiconductor element and a conductor, and a pad 4 for extracting the function to the outside, and all probes used during electrical testing of the semiconductor wafer 1. One chip's worth of regions 5 made of a conductor that electrically short-circuit the contact positions on the semiconductor wafer are arranged.
半導体チップ2の領域3の機能を試験する為の電気テス
トは、それぞれの半導体チップのパッド4に電気テスト
用の探針を接触させて行われる。An electrical test for testing the function of the region 3 of the semiconductor chip 2 is performed by bringing an electrical testing probe into contact with the pad 4 of each semiconductor chip.
また、電気テスト用の探針と半導体ウェハ1との電気的
な接触状態を試験するときには、すべての電気テスト用
の探針を領域5の上に接触させて行われる。Furthermore, when testing the state of electrical contact between the electrical test probes and the semiconductor wafer 1, all the electrical test probes are brought into contact with the area 5.
第2図は本発明による第2の実施例を示す平面図である
。FIG. 2 is a plan view showing a second embodiment of the present invention.
第2図を参照するに、上記第1の実施例と異なる点は、
電気テスト用の探針を電気的に短絡させる導電体からな
る領域5が、2チップ分設けられていることである。し
たがって、この第2の実施例は、半導体ウェハ6と電気
テスト用の探針との電気的な接触状態の試験を何度も行
うときに探針と領域5との接触位置を変えることができ
る為に、探針の接触の際にできる領域5上の傷による電
気的な接触状態への影響を減らせるという利点がある。Referring to FIG. 2, the differences from the first embodiment are as follows.
The region 5 made of a conductor that electrically shorts the probe for electrical testing is provided for two chips. Therefore, in this second embodiment, the contact position between the probe and the region 5 can be changed when testing the electrical contact state between the semiconductor wafer 6 and the probe for electrical testing many times. Therefore, there is an advantage that the influence on the electrical contact state due to scratches on the area 5 that are formed when the probe comes into contact with the probe can be reduced.
発明の詳細
な説明したように1本発明によれば、複数の半導体チッ
プを含む半導体ウェハにおいて、前記半導体チップとは
別に、半導体ウェハの電気テスト時に用いる全探針の半
導体ウェハ上の接触位置を電気的に短絡状態にする領域
を含むことにより、半導体ウェハを交換しないで半導体
ウェハと電気テスト用の探針との電気的な接触状態を試
験することができる効果が得られる。DETAILED DESCRIPTION OF THE INVENTION According to one aspect of the present invention, in a semiconductor wafer including a plurality of semiconductor chips, the contact positions of all probes used during electrical testing of the semiconductor wafer on the semiconductor wafer are determined separately from the semiconductor chips. By including the region that is electrically short-circuited, it is possible to test the electrical contact state between the semiconductor wafer and the electrical test probe without replacing the semiconductor wafer.
第1図は本発明による第1の実施例を示す平面図、第2
図は本発明による第2の実施例を示す平面図、第3図は
従来の技術を説明する平面図である。
1.6.7.、、半導体ウェハ、210.半導体チップ
、310.半導体素子と導電体で構成された要求される
機能を持つ領域、4.、、パッド、501.すべてのブ
ロービング用の探針を電気的にショートさせる導電体か
らなる領域、8.、、全面を導電体で覆った半導体ウェ
ハFIG. 1 is a plan view showing a first embodiment of the present invention, and FIG.
The figure is a plan view showing a second embodiment of the present invention, and FIG. 3 is a plan view illustrating a conventional technique. 1.6.7. ,, semiconductor wafer, 210. semiconductor chip, 310. 4. A region having the required function and composed of a semiconductor element and a conductor; 4. ,,pad,501. 8. A region made of a conductor that electrically shorts all the probing probes. ,,a semiconductor wafer whose entire surface is covered with a conductor
Claims (1)
半導体チップとは別に、該半導体ウェハの電気テスト時
に用いる全探針の半導体ウェハ上の接触位置を電気的に
短絡状態にする領域を含むことを特徴とする半導体ウェ
ハ。A semiconductor wafer including a plurality of semiconductor chips, including a region separate from the semiconductor chips that electrically shorts the contact positions of all probes on the semiconductor wafer used during an electrical test of the semiconductor wafer. semiconductor wafers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25298888A JPH02100335A (en) | 1988-10-07 | 1988-10-07 | Semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25298888A JPH02100335A (en) | 1988-10-07 | 1988-10-07 | Semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02100335A true JPH02100335A (en) | 1990-04-12 |
Family
ID=17244940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25298888A Pending JPH02100335A (en) | 1988-10-07 | 1988-10-07 | Semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02100335A (en) |
-
1988
- 1988-10-07 JP JP25298888A patent/JPH02100335A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3801910A (en) | Externally accessing mechanical difficult to access circuit nodes using photo-responsive conductors in integrated circuits | |
JPH02211648A (en) | Semiconductor device | |
US6025733A (en) | Semiconductor memory device | |
JPH02100335A (en) | Semiconductor wafer | |
JP2657315B2 (en) | Probe card | |
JP3093216B2 (en) | Semiconductor device and inspection method thereof | |
JP3763258B2 (en) | Probe card and chip area sorting method using the same | |
JPH02180046A (en) | Semiconductor wafer | |
JPS6231148A (en) | Semiconductor device | |
JPH065686A (en) | Semiconductor integrated circuit device | |
JPH0269682A (en) | Connecting base plate for measurement | |
JPS6235644A (en) | Semiconductor device | |
KR19980020299A (en) | Probe tip on wafer test device for reduced contact resistance | |
JPS6384050A (en) | Integrated circuit | |
JPH06104316A (en) | Film carrier tape | |
JPH03276656A (en) | Semiconductor testing device | |
JPH0661316A (en) | Probe assembly | |
JPH0284748A (en) | Semiconductor wafer | |
JPH03284861A (en) | Probe card | |
JPS604234A (en) | Integrated circuit device | |
JPH0262947B2 (en) | ||
JPS6170734A (en) | Probe card | |
JPH04288847A (en) | Semiconductor test device | |
JPH04318951A (en) | Probe card | |
JPH03211843A (en) | Semiconductor integrated circuit |