JPS6231148A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6231148A
JPS6231148A JP17076185A JP17076185A JPS6231148A JP S6231148 A JPS6231148 A JP S6231148A JP 17076185 A JP17076185 A JP 17076185A JP 17076185 A JP17076185 A JP 17076185A JP S6231148 A JPS6231148 A JP S6231148A
Authority
JP
Japan
Prior art keywords
pads
sensor
semiconductor
contact
probe card
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17076185A
Other languages
Japanese (ja)
Inventor
Katsuhiko Sato
勝彦 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17076185A priority Critical patent/JPS6231148A/en
Publication of JPS6231148A publication Critical patent/JPS6231148A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To attain the sure measurement of semiconductor chips by providing the inspection pads which the probes for a sensor of a probe card are brought in contact with and the conductors which said pads are connected to, in the peripheral part of the semiconductor chip. CONSTITUTION:On the dicing run 12 extending longitudinally on a substrate 11, the inspection pads 14a, 14b, 14c, and 14d are arranged, which the probes for a sensor of a probe card are brought in contact with. Conductors 15 and 16 are arranged between the pads 14a and 14b, and between the pads 14c and 14d, respectively. A voltage is applied between the probes 17 and 18 for a sensor of the probe card in advance and when the probes 17 and 18 are brought in contact with the pads 14a and 14b respectively, a current flows. Even if one probe is not in contact with the pad, a current does not flow and the function of the sensor can be effected. Accordingly, the measurement of semiconductor chips can be made surely.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体装置に関し、特にプローブカードの針を
用いてウェハ状態の半導体チップを試験できる半導体装
置に係わる。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a semiconductor chip in a wafer state can be tested using a probe card needle.

〔発明の技術的背景〕[Technical background of the invention]

一般に、ブO−ブカードのセンサ部は例えば第3図に示
すように長針1と短針2からなり、通常、長針1、短針
2は接触部3にて接触している。そして、この状態で長
針1、短針2の間に電圧を印加すると、当然電流が流れ
る。次に、これらが半導体チップ4に徐徐に近づけてい
くと、長針1が半導体基板(ウェハ)4と接触し、同時
に長針1と短針2は離れる。この際、長針1と短針2間
に両者に電圧を印加しても電流は流れない。このように
長針1と短針2の間に電流が流れるか、あるいは流れな
いかでプローブカードが半導体基板4に接触しているか
どうかを調べる。なお、センサ部は、通常第3図のもの
を一組として2組前記半導体基板4を構成する半導体チ
ップに対して対角線上あるいはそれに近いかたちでセッ
トされる。
In general, the sensor section of a book card consists of a long hand 1 and a short hand 2, for example as shown in FIG. When a voltage is applied between the long hand 1 and the short hand 2 in this state, a current naturally flows. Next, as these gradually approach the semiconductor chip 4, the long hand 1 comes into contact with the semiconductor substrate (wafer) 4, and at the same time, the long hand 1 and the short hand 2 separate. At this time, even if a voltage is applied between the long hand 1 and the short hand 2, no current flows. In this way, it is determined whether the probe card is in contact with the semiconductor substrate 4 by whether or not current flows between the long hand 1 and the short hand 2. Incidentally, the sensor sections are usually set in two sets, one set of which is shown in FIG.

〔発明の技術的背景〕[Technical background of the invention]

しかしながら、従来技術によれば、ブローブカ−ドを長
時間使用した場合、長針1、短針2の接触部3に酸化膜
や錆等が生じ、長針1が半導体基板4と接触していない
のに接触していると感知したり、逆に半導体基板4と接
触しているにかかわらず、接触していないと感知する等
の減少が発生する。従って、前記半導体基板4から高信
頼性、高性能なセンサが得られず、無駄な時間を費やし
ていた。また、今後チップサイズが大きくなる傾向にあ
り、ウェハの反り、平行でない信号針等の問題により、
今後益々高性能なセンサが要求される。
However, according to the prior art, when a probe card is used for a long time, an oxide film, rust, etc. are formed on the contact portion 3 of the long hand 1 and the short hand 2, and the long hand 1 comes into contact with the semiconductor substrate 4 even though it is not in contact with it. This may result in a decrease in the number of contacts, such as when it is detected that the semiconductor substrate 4 is not in contact with the semiconductor substrate 4, or vice versa. Therefore, a highly reliable and high performance sensor cannot be obtained from the semiconductor substrate 4, and time is wasted. In addition, as chip sizes tend to increase in the future, problems such as wafer warping and non-parallel signal needles will cause
In the future, more and more high-performance sensors will be required.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情に鑑みてなされたもので、半導体チッ
プの周辺部あるいはダイシングライン上にプローブカー
ドのセンサ用の針を接触するための検査用パッド及びこ
れらを接続するための導体を設けることにより、半導体
チップの測定を確実になしえ、もって高信頼性、高性能
のセンサを得られる半導体装置を提供することを目的と
する。
The present invention has been made in view of the above circumstances, and is achieved by providing test pads for contacting probe card sensor needles and conductors for connecting these on the periphery of a semiconductor chip or on a dicing line. It is an object of the present invention to provide a semiconductor device that can reliably measure semiconductor chips and thereby provide a highly reliable and high-performance sensor.

〔発明の概要〕[Summary of the invention]

本発明は、複数の半導体チップからなる半導体基板と、
前記半導体チップ上の周辺部に設けられたボンディング
用パッドと、前記半導体チップ上の周辺部又は該チップ
近傍のダイシングライン上に設けられプローブカードの
センサ用の針を接触するための複数の検査用パッドと、
前記検査用パッド間を接続する導体とを接続することを
特徴とし、もってプローブカードのセンサ部を確実に半
導体チップの検査用パッドに当接して、半導体チップを
確実に測定でき、高信頼性、高性能なセンサを得ること
を図ったものである。
The present invention provides a semiconductor substrate including a plurality of semiconductor chips;
A plurality of test pads for contacting bonding pads provided on the periphery of the semiconductor chip with sensor needles of a probe card provided on the periphery of the semiconductor chip or on the dicing line near the chip. pad and
The probe card is characterized in that the test pads are connected to a conductor that connects the test pads, so that the sensor part of the probe card can surely come into contact with the test pad of the semiconductor chip, and the semiconductor chip can be reliably measured, resulting in high reliability and The aim is to obtain a high-performance sensor.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第1図を参照して説明する。 An embodiment of the present invention will be described below with reference to FIG.

図中の11は、半導体基板(ウェハ)である。11 in the figure is a semiconductor substrate (wafer).

この基板11は、縦横に走るダイシングライン(一点鎖
Jり12・・・によって複数の半導体チップ13a11
3b、13c・・・に分割されている。前記基板11の
縦方向に走るダイシングラン12上には、プローブカー
ドのセンサ部の針を当接するだめの検査用パッド14a
、14b、14C。
This substrate 11 has a plurality of semiconductor chips 13a11 formed by dicing lines (single-dot chain lines 12...) running vertically and horizontally.
It is divided into 3b, 13c, and so on. On the dicing run 12 running in the vertical direction of the substrate 11, there is a test pad 14a on which the needle of the sensor section of the probe card comes into contact.
, 14b, 14C.

14dが夫々設けられている。なお、これら検査用パッ
ド14a〜14dは、半導体チップ13a・・・に通常
設けられるボンディング用パッド(図示せず)と同様な
形状となっている。前記検査用パッド14a、14b間
には導体15が、検査用パッド14G、14d間には導
体16が設けられている。
14d are provided respectively. Note that these test pads 14a to 14d have the same shape as bonding pads (not shown) normally provided on the semiconductor chips 13a... A conductor 15 is provided between the test pads 14a and 14b, and a conductor 16 is provided between the test pads 14G and 14d.

こうした構造の半導体装置をプローブカードを用いて測
定するときは、例えば第2図に示すように行なう。即ち
、プローブカードのセンサ用の針17.18の間に電圧
を印加しておき、針17と検査用パッド14a1針18
と検査用パッド14bを夫々接触させると電流が流れ、
一本でも非接触の時は電流が流れず、センサの機能を果
たすことができる。
When measuring a semiconductor device having such a structure using a probe card, the measurement is performed as shown in FIG. 2, for example. That is, a voltage is applied between the sensor needles 17 and 18 of the probe card, and the needle 17 and the test pad 14a1 needle 18
When the test pad 14b and the test pad 14b are brought into contact with each other, a current flows,
When even one wire is not in contact, no current flows and it can function as a sensor.

しかして、本発明によれば、半導体基板11の縦方向に
走るダイシングライ12上にプローブカードのセンサ用
の針17.18を接触せるための検査用パッド14a〜
14dを設け、かつこれらパッド14a〜14dの接続
用の導体15.16を設けた構造となっているため、従
来の如くセンサ用の針量に酸化膜等が生じることなく、
確実に各半導体チップ13a、13b、13c・・・等
を測定でき、高信頼性で高性能なセンサを得ることがで
きる。また、検査用パッド14a〜14dはダイシング
ライ12上に設けられているため、半導体チップの素子
面積に悪影響を与えることなく、従来の半導体チップと
同面積で同様な素子数を確保できる。更に、前記検査用
パッド14a〜14dは半導体チップに通常形成される
ボンディング用パッドと同時に形成できるため、特別な
工程を必要としない。更には、センサ用の針17.18
は通常の信号部に使用するのと同様なものを用いること
ができる。
According to the present invention, the test pads 14a to 14a are used to bring the sensor needles 17 and 18 of the probe card into contact with the dicing line 12 running in the vertical direction of the semiconductor substrate 11.
14d and conductors 15 and 16 for connecting these pads 14a to 14d, there is no oxide film or the like formed on the sensor needle as in the conventional case.
Each semiconductor chip 13a, 13b, 13c, etc. can be reliably measured, and a highly reliable and high-performance sensor can be obtained. Moreover, since the test pads 14a to 14d are provided on the dicing line 12, the same number of elements can be secured in the same area as a conventional semiconductor chip without adversely affecting the element area of the semiconductor chip. Furthermore, since the test pads 14a to 14d can be formed simultaneously with bonding pads that are normally formed on semiconductor chips, no special process is required. Furthermore, the sensor needle 17.18
can be the same as that used in a normal signal section.

また、上記実施例では、検査用パッドを半導体基板の縦
方向に走るダイシングライン上に設けた場合について述
べたが、これに限らない。例えば、図糸しないが、前記
基板の横方向に走るダイシングライン上でも、縦横に走
るダイシングライ上でもよい。また、第4図に示す如く
、半導体チップ21上の周辺部に設けてもよい。
Further, in the above embodiment, a case has been described in which the test pads are provided on a dicing line running in the vertical direction of the semiconductor substrate, but the present invention is not limited to this. For example, although not shown, it may be on a dicing line running in the horizontal direction of the substrate or on a dicing line running in the vertical and horizontal directions. Alternatively, as shown in FIG. 4, it may be provided at the periphery of the semiconductor chip 21.

〔発明の効果) 以上詳述した如く本発明によれば、半導体チップを確実
に測定でき、もって高信頼性でかつ高性能なセンサを提
供しえる半導体装置を提供できる。
[Effects of the Invention] As described in detail above, according to the present invention, it is possible to provide a semiconductor device that can reliably measure a semiconductor chip and provide a highly reliable and high-performance sensor.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例に係る半導体装置の平面図、
第2図はプローブカードのセンサを用いて半導体チップ
を試験する場合の説明図、第3図は従来の半導体チップ
の試験法を説明するための図、第4図は本発明の他の実
施例に係る半導体装置の平面図である。 11・・・半導体基板(ウェハ)、12・・・ダイシン
グライン、13a〜13c、21・・・半導体チップ、
14a〜14d・・・検査用パッド、15.16・・・
導体、17.18・・・針。
FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention;
FIG. 2 is an explanatory diagram for testing a semiconductor chip using a probe card sensor, FIG. 3 is a diagram for explaining a conventional semiconductor chip testing method, and FIG. 4 is another embodiment of the present invention. FIG. 2 is a plan view of a semiconductor device according to FIG. 11... Semiconductor substrate (wafer), 12... Dicing line, 13a to 13c, 21... Semiconductor chip,
14a to 14d...Testing pads, 15.16...
Conductor, 17.18...needle.

Claims (2)

【特許請求の範囲】[Claims] (1)、複数の半導体チップからなる半導体基板と、前
記半導体チップ上の周辺部に設けられたボンディング用
パッドと、前記半導体チップ上の周辺部又は該チップ近
傍のダイシングライン上に設けられたプローブカードの
センサ用の針を接触するための複数の検査用パッドと、
前記検査用パッド同志を接続する導体とを具備したこと
を特徴とする半導体装置。
(1) A semiconductor substrate consisting of a plurality of semiconductor chips, a bonding pad provided on the periphery of the semiconductor chip, and a probe provided on the dicing line on the periphery of the semiconductor chip or near the chip. a plurality of test pads for contacting the card's sensor needle;
A semiconductor device comprising: a conductor connecting the test pads to each other.
(2)、2個の検査用パッドとこれらパッドを接続する
1個の導体が存在し、これを一組として前記半導体チッ
プに対し縦方向、あるいは横方向、あるいは縦と横方向
に複数組組合わせたことを特徴とする特許請求の範囲第
1項記載の半導体装置。
(2) There are two test pads and one conductor that connects these pads, and these are used as one set to form multiple sets in the vertical direction, the horizontal direction, or the vertical and horizontal directions with respect to the semiconductor chip. A semiconductor device according to claim 1, characterized in that:
JP17076185A 1985-08-02 1985-08-02 Semiconductor device Pending JPS6231148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17076185A JPS6231148A (en) 1985-08-02 1985-08-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17076185A JPS6231148A (en) 1985-08-02 1985-08-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6231148A true JPS6231148A (en) 1987-02-10

Family

ID=15910888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17076185A Pending JPS6231148A (en) 1985-08-02 1985-08-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6231148A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5285082A (en) * 1989-11-08 1994-02-08 U.S. Philips Corporation Integrated test circuits having pads provided along scribe lines
US5616931A (en) * 1994-08-24 1997-04-01 Nec Corporation Semiconductor device
JPWO2021255842A1 (en) * 2020-06-16 2021-12-23

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5285082A (en) * 1989-11-08 1994-02-08 U.S. Philips Corporation Integrated test circuits having pads provided along scribe lines
US5616931A (en) * 1994-08-24 1997-04-01 Nec Corporation Semiconductor device
GB2292637B (en) * 1994-08-24 1998-07-22 Nec Corp Semiconductor device
JPWO2021255842A1 (en) * 2020-06-16 2021-12-23
WO2021255842A1 (en) * 2020-06-16 2021-12-23 日本電信電話株式会社 Semiconductor wafer

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