JPS6218037Y2 - - Google Patents

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Publication number
JPS6218037Y2
JPS6218037Y2 JP1981072642U JP7264281U JPS6218037Y2 JP S6218037 Y2 JPS6218037 Y2 JP S6218037Y2 JP 1981072642 U JP1981072642 U JP 1981072642U JP 7264281 U JP7264281 U JP 7264281U JP S6218037 Y2 JPS6218037 Y2 JP S6218037Y2
Authority
JP
Japan
Prior art keywords
probe
integrated circuit
semiconductor substrate
thin metal
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1981072642U
Other languages
Japanese (ja)
Other versions
JPS57186037U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1981072642U priority Critical patent/JPS6218037Y2/ja
Publication of JPS57186037U publication Critical patent/JPS57186037U/ja
Application granted granted Critical
Publication of JPS6218037Y2 publication Critical patent/JPS6218037Y2/ja
Expired legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【考案の詳細な説明】 本考案は集積回路製造工程中のスクライブ前の
半導体基板上に形成した集積回路をICテスタに
接続した、自動プローバを使用して各種電気的試
験(以下P/W試験と記す)を確実に行なうこと
に適した半導体基板の構造に関するものである。
[Detailed description of the invention] This invention conducts various electrical tests (hereinafter referred to as P/W tests) using an automatic prober connected to an IC tester on integrated circuits formed on a semiconductor substrate before scribing during the integrated circuit manufacturing process. The present invention relates to a structure of a semiconductor substrate suitable for reliably performing the following.

従来この種の集積回路に係わる電気的試験は
ICテスタに接続した自動プローバの探針が半導
体基板上に複数個つくられた集積回路内の金属薄
膜で形成されたボンデイングパツドに逐次接触す
る方法であつた。
Conventionally, electrical tests related to this type of integrated circuit are
In this method, the probe of an automatic prober connected to an IC tester successively contacts bonding pads made of thin metal films within multiple integrated circuits fabricated on a semiconductor substrate.

この場合、自動プローバの探針カードに取付け
られた探針が老朽、変形、先端の摩耗などにより
集積回路内のボンデイングパツドに対して接触不
良を起こしたりすると実際には良品である集積回
路もICテスタが不良と判定し、その表面に傷を
付けて良品である集積回路を破壊してしまうとい
う欠点があつた。
In this case, if the probe attached to the probe card of the automatic prober causes poor contact with the bonding pad inside the integrated circuit due to aging, deformation, or abrasion of the tip, the integrated circuit may actually be a good product. The drawback was that the IC tester judged the IC to be defective and damaged the surface of the IC, destroying the good integrated circuit.

また、上記方法で半導体基板上の集積回路の試
験途中で探針の接触不良を検査する場合は、試験
を一度中断し被試験半導体基板の代りに別の金属
薄膜を全面につけた半導体基板などに探針を接触
させなければならず時間の無駄も多かつた。
In addition, when using the above method to inspect for poor contact with the probe during a test of an integrated circuit on a semiconductor substrate, it is recommended to stop the test and replace the semiconductor substrate under test with another semiconductor substrate with a thin metal film coated on its entire surface. A lot of time was wasted as the probe had to be brought into contact.

本考案の目的は、従来の集積回路を成形した半
導体基板上に探針の接触不良検出手段として金属
薄膜のパツドを持たせることにより上記欠点の解
決方法の一つを提供することにある。さらに、今
後の集積回路製造用半導体基板は大口径化が進み
集積回路のチツプ面積が大きくなることによりボ
ンデイングパツドも多くなりP/W試験時の探針
の接触不良は極めて少なくさせなければならな
い。
An object of the present invention is to provide a method for solving the above-mentioned drawbacks by providing a metal thin film pad as a probe contact failure detection means on a semiconductor substrate on which a conventional integrated circuit is formed. Furthermore, semiconductor substrates for manufacturing integrated circuits in the future will have larger diameters, and as the chip area of integrated circuits increases, the number of bonding pads will increase, and contact failures of probes during P/W tests must be extremely reduced. .

従来のP/W試験において、自動プローバの探
針が半導体基板上の被試験集積回路内のボンデイ
ングパツドに対して探針自身の不良、または被試
験半導体基板の位置合せ不良などにより接触不良
を起こすことは少なからずあつた。
In conventional P/W testing, the probe of an automatic prober may have poor contact with the bonding pad in the integrated circuit under test on the semiconductor substrate due to a defect in the probe itself or poor alignment of the semiconductor substrate under test. There were quite a few things that could happen.

本考案によれば被試験半導体表面に複数の集積
回路を形成し、そのうち少なくとも一つの集積回
路の面積を占有する一様な厚さの金属薄膜パツド
を持たせることによりP/W試験途中において不
良が連続発生した場合、自動プローバの探針を該
金属薄膜パツドに押し当ててあらかじめ用意した
接触不良検出用プログラムで該探針の不都合によ
る接触不良を診断することが出来る。
According to the present invention, a plurality of integrated circuits are formed on the surface of a semiconductor under test, and by providing a metal thin film pad of uniform thickness that occupies the area of at least one of the integrated circuits, failures occur during a P/W test. If this occurs continuously, contact failure due to an inconvenience of the probe can be diagnosed by pressing the probe of an automatic prober against the metal thin film pad and using a contact failure detection program prepared in advance.

次に本考案の実施例について図面を参照して説
明する。
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は基板表面に集積回路1を複数形成した
従来の半導体基板2である。
FIG. 1 shows a conventional semiconductor substrate 2 on which a plurality of integrated circuits 1 are formed on the surface of the substrate.

第2図は本考案による探針接触不良検出手段と
しての一つの集積回路面積を占有しボンデイング
パツドと同じ厚さの金属薄膜3を有する半導体基
板4である。
FIG. 2 shows a semiconductor substrate 4 which occupies one integrated circuit area and has a metal thin film 3 having the same thickness as a bonding pad, which serves as a probe contact failure detection means according to the present invention.

第3図〜第6図は第2図に示した該半導体基板
を使用してP/W試験時の探針接触不良を検出す
る実施例を説明する断面図であり第3図は探針カ
ード5に取付けられた探針6の直下に自動プロー
バの一部であるステージ7に固定された該半導体
基板4の一部である被試験集積回路9を移動した
図である。
3 to 6 are cross-sectional views illustrating an example of detecting probe contact failure during a P/W test using the semiconductor substrate shown in FIG. 2, and FIG. 3 is a probe card. 5 is a diagram in which an integrated circuit under test 9, which is a part of the semiconductor substrate 4 fixed to a stage 7 which is a part of an automatic prober, has been moved directly below a probe 6 attached to the probe 5. FIG.

第4図はステージ7が上昇して探針6と該半導
体基板4の一部である被試験集積回路9内につく
られた多数のボンデイングパツド8に接触してい
る図である。
FIG. 4 is a diagram in which the stage 7 has been raised and is in contact with the probe 6 and a number of bonding pads 8 formed within the integrated circuit under test 9 which is a part of the semiconductor substrate 4. In FIG.

第5図は探針6の変形が原因となつて探針6と
ポンデイングパツド8の接触不良を示す図であ
る。すなわち、第5図に示した接触不良が発生す
ると探針6に接続しているICテスタは被試験集
積回路9が良品であつても不良品と判定し、次に
ステージ7が移動して順次被試験集積回路の試験
を実行することになる。
FIG. 5 is a diagram showing poor contact between the probe 6 and the ponding pad 8 due to deformation of the probe 6. That is, when the contact failure shown in FIG. 5 occurs, the IC tester connected to the probe 6 determines that the integrated circuit under test 9 is a defective product even if it is a good product, and then the stage 7 moves and sequentially tests the IC tester. The integrated circuit under test will be tested.

このように不良品が連続発生する場合はあらか
じめICテスタ内に用意した接触不良検出用プロ
グラムを作動させ、第6図に示すように探針6の
直下に接触不良検出手段としての金属薄膜パツド
3が位置するようにステージ7を移動させ、ステ
ージ7を上昇させて探針6と金属薄膜パツド3を
接触させてから全探針のいづれか1ピンをICテ
スタから駆動ピンとして電圧を印加し、他のピン
を検出ピンとして駆動ピンからの電圧を検出する
ことにすれば探針6と金属薄膜パツド3の接触不
良が検出できる。
If defective products occur continuously in this way, a contact failure detection program prepared in advance in the IC tester is activated, and a metal thin film pad 3 is placed directly under the probe 6 as a contact failure detection means, as shown in FIG. After moving the stage 7 so that If the pin is used as a detection pin and the voltage from the drive pin is detected, poor contact between the probe 6 and the metal thin film pad 3 can be detected.

本考案は以上説明したように第2図に示す該半
導体基板を第6図に示すような構成にすることに
よつて探針の老朽、変形、先端の摩耗などにより
発生する接触不良がP/W試験途中に検出可能と
なり、良品の集積回路を誤つて不良と判定するこ
とを著しく減少させる効果がある。
As explained above, the present invention reduces contact failures caused by aging, deformation, and abrasion of the tip of the probe by configuring the semiconductor substrate shown in FIG. 2 as shown in FIG. This can be detected during the W test, and has the effect of significantly reducing the possibility of erroneously determining a good integrated circuit as defective.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は集積回路を複数つくつた従来の半導体
基板を示す平面図である。第2図aは本考案の実
施例の探針接触不良検出パツドを有する半導体基
板を示す平面図であり、第2図bはこの断面図で
ある。第3図〜第6図は第2図に示した該半導体
基板を使用して構成した実施例を示す断面図であ
る。 各図において、1……集積回路、2……従来の
半導体基板、3……金属薄膜パツド、4……探針
接触不良検出パツドを有する半導体基板、5……
探針カード、6……探針、7……ステージ、8…
…ボンデイングパツド、9……被試験集積回路で
ある。
FIG. 1 is a plan view showing a conventional semiconductor substrate on which a plurality of integrated circuits are fabricated. FIG. 2a is a plan view showing a semiconductor substrate having a probe contact failure detection pad according to an embodiment of the present invention, and FIG. 2b is a sectional view thereof. 3 to 6 are cross-sectional views showing an embodiment constructed using the semiconductor substrate shown in FIG. 2. In each figure, 1... integrated circuit, 2... conventional semiconductor substrate, 3... metal thin film pad, 4... semiconductor substrate having probe contact failure detection pad, 5...
Probe card, 6... Probe, 7... Stage, 8...
...bonding pad, 9...integrated circuit under test.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 実質的に同じ大きさの多数の半導体チツプが行
列に配置され、各半導体チツプには集積回路が形
成されている半導体基板において、前記基板の一
部に、前記半導体チツプとほぼ同じ大きさであつ
て実質的に一様な厚さの金属薄膜が設けられてお
り、前記金属薄膜は、前記集積回路の電気的試験
のためのプローバが有する複数の探針を前記金属
薄膜に接触させて探針間の導通状態を調べること
により、前記複数の探針と前記集積回路内のボン
デイングパツドとの接触不良を検出するために用
いられることを特徴とする半導体基板。
In a semiconductor substrate in which a large number of semiconductor chips having substantially the same size are arranged in a matrix, each semiconductor chip having an integrated circuit formed therein, a part of the substrate is provided with a plurality of semiconductor chips having substantially the same size as the semiconductor chips. A thin metal film having a substantially uniform thickness is provided, and the thin metal film is formed by contacting the plurality of probes of a prober for electrical testing of the integrated circuit with the thin metal film. A semiconductor substrate, characterized in that it is used to detect poor contact between the plurality of probes and bonding pads in the integrated circuit by checking the conductivity between them.
JP1981072642U 1981-05-20 1981-05-20 Expired JPS6218037Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981072642U JPS6218037Y2 (en) 1981-05-20 1981-05-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981072642U JPS6218037Y2 (en) 1981-05-20 1981-05-20

Publications (2)

Publication Number Publication Date
JPS57186037U JPS57186037U (en) 1982-11-26
JPS6218037Y2 true JPS6218037Y2 (en) 1987-05-09

Family

ID=29868420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981072642U Expired JPS6218037Y2 (en) 1981-05-20 1981-05-20

Country Status (1)

Country Link
JP (1) JPS6218037Y2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098283A (en) * 1973-12-26 1975-08-05
JPS54112174A (en) * 1978-02-22 1979-09-01 Nec Corp Testing method for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098283A (en) * 1973-12-26 1975-08-05
JPS54112174A (en) * 1978-02-22 1979-09-01 Nec Corp Testing method for semiconductor device

Also Published As

Publication number Publication date
JPS57186037U (en) 1982-11-26

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