JPS61152034A - Wafer prober - Google Patents
Wafer proberInfo
- Publication number
- JPS61152034A JPS61152034A JP59279507A JP27950784A JPS61152034A JP S61152034 A JPS61152034 A JP S61152034A JP 59279507 A JP59279507 A JP 59279507A JP 27950784 A JP27950784 A JP 27950784A JP S61152034 A JPS61152034 A JP S61152034A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- contact resistance
- probe
- probe pin
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分封」
本発明は、31!!槓回路(IC)ウェハの測定・検査
を行う際に、ウェハの送シを手動及び自動で行ってクエ
へ上にプローブピンを立てる機能をもつICのウエハグ
ローバに関する。[Detailed description of the invention] [Technical packaging] The present invention is based on 31! ! This invention relates to an IC wafer glover that has the function of manually or automatically transporting the wafer and setting probe pins on the IC wafer when measuring and inspecting the IC wafer.
従来のICクエハ10−バ装置は、半導体ウェハを平面
部(ステージ)K固定し、lチップ分ずつ移動しながら
、各チップ毎にチップ上のポンディングパッドとプロー
グピンを接触させるものである。ステージは通常X、Y
、Zの3軸方向に移動可能でコンビエータによって移動
管が制御される3軸テープμ上に設けられる。そしてこ
のステージがX、Y方向に動くことによってウェハは平
面方向に移動し、垂直方向移動により各チップのポンデ
ィングパッドとプローブピンが接触するのである。この
時ICテスターを用いる事によシチッデの電気的特性を
検出してそのチップの良否を決定することができる。と
ころがクエハプローパOプローブピン先端に微細な付着
物が残)、ポンディングパッド(11!i常アμミ膜)
との接触状態が悪くなると、チップとしては良品でおる
のに、プローブピンとポンディングパッドの接触不良(
高接触抵抗)のために不良と判定されることがおこる。In a conventional IC wafer 10-bar device, a semiconductor wafer is fixed on a flat surface (stage) K, and is moved one chip at a time, so that a bonding pad on each chip is brought into contact with a probe pin. Stages are usually X, Y
, Z, and is provided on a triaxial tape μ whose movement tube is controlled by a combinator. By moving this stage in the X and Y directions, the wafer moves in the plane direction, and by moving in the vertical direction, the bonding pads of each chip and probe pins come into contact. At this time, by using an IC tester, the electrical characteristics of the chip can be detected and the quality of the chip can be determined. However, fine deposits remained on the tip of the Queha Propa O probe pin), and the bonding pad (11!
If the contact condition between the probe pin and the bonding pad deteriorates, the chip may be good, but the contact between the probe pin and the bonding pad may be poor (
High contact resistance) may result in the product being judged as defective.
一旦接触抵抗が高くなると、自動検査中においてはそれ
以後検査されるチップは殆んどが不良判定され1歩留が
極度に低下する。このように従来のウエハプローパ装置
ではプローブピンの接触抵抗が高くなる革を未然に検出
して防止することは不可能であった。Once the contact resistance becomes high, most of the chips subsequently tested during automatic testing will be determined to be defective, resulting in an extremely low yield. As described above, with the conventional wafer proper device, it has been impossible to detect and prevent the occurrence of leather which increases the contact resistance of the probe pins.
本発明の要旨とするところはプローブピンを研磨する機
構と、プローブピン先端の接触抵抗を測定する機構をも
ち、プローグピンの研磨と接触抵抗診断を行う5区がで
きることを特徴とするウエハデローパ装置である。The gist of the present invention is a wafer de-roper device that has a mechanism for polishing probe pins and a mechanism for measuring contact resistance at the tip of the probe pin, and has five sections for polishing the probe pins and diagnosing contact resistance. .
第゛1図はウエハプローパ装置のステージ部を示す。ス
テージ(1)は従来例と同様数値制御される。FIG. 1 shows the stage section of the wafer proper device. Stage (1) is numerically controlled as in the conventional example.
このステージがx、y(水平)方向に動くことによって
、ウェハ(8)が移動し、さらに2(鉛直)方向に上下
することによってウェハ(8)に形成された各チップ(
6)の検査をおこなう方法は従来と同じである。ステー
ジ(1)上にプローブピン(2)の研磨板(3)と接触
板(4)を設置する。ICテスターによシウエハ(7)
の検査(各チップの検査)を行う時、同時に定期的にプ
ローブピン(2)真下に研磨板(4)を移動させて鉛直
方向に上下することによってプローブピン(2)先端を
これにあてクリーニングする。その後プローブピン(2
)真下にアルミ板(4)を移動させて同様にステージ(
1)t−上昇させプローブピン(2)と接触板(4)を
接触させて、ICテスター(5)によって接触抵抗を測
定する。接触板(4)はアルミニウムや、銅等の導電性
金属板から構成され、研磨板(3)はセフミック板や砥
石等から形成されている。この接触抵抗が予じめ定めた
ある値以下であれば、ウェハ検査を続行するが、ある値
以上であれば検査を中止する。これら動作がIC0a*
プログラム中に折込まれ随時行えるようにしである。By moving this stage in the x and y (horizontal) directions, the wafer (8) moves, and by moving it up and down in the 2 (vertical) directions, each chip (8) formed on the wafer (8) is moved.
The method for conducting the test 6) is the same as the conventional method. A polishing plate (3) and a contact plate (4) for the probe pin (2) are installed on the stage (1). IC tester wafer (7)
When inspecting (inspecting each chip), at the same time, periodically move the polishing plate (4) directly below the probe pin (2) and move it up and down in the vertical direction to place the tip of the probe pin (2) on it for cleaning. do. Then probe pin (2
) Move the aluminum plate (4) directly below and place the stage (
1) Bring the probe pin (2) and the contact plate (4) into contact with each other by raising the probe pin (t), and measure the contact resistance using the IC tester (5). The contact plate (4) is made of a conductive metal plate such as aluminum or copper, and the polishing plate (3) is made of a cefmic plate, a grindstone, or the like. If this contact resistance is below a certain predetermined value, the wafer inspection is continued, but if it is above a certain value, the inspection is stopped. These operations are IC0a*
It is inserted into the program so that it can be performed at any time.
〔発明の効果」
以上のように本発明によれば、プローブピン先端の汚れ
による接触抵抗の増大を検知することができ、不良プロ
ーブピンによって良品チップを不良と誤認識して歩留低
下を招くことを防止することが可能となる。[Effects of the Invention] As described above, according to the present invention, it is possible to detect an increase in contact resistance due to dirt on the tip of a probe pin, and a defective probe pin can cause a good chip to be mistakenly recognized as defective, resulting in a decrease in yield. This makes it possible to prevent this.
第1図乃至第3図はこの発明の一実施例を示す図で、第
1図及び第2図は平面図、第3図は側面図である。
(1)・・・ステージ (2戸・・プローブピン (3
)・・・研磨板(4)・・・接触板 (5)・・・IC
テスター (6)・・・チップ (7)・・・ポンディ
ングパッド (8)・・・ウェハ。1 to 3 are views showing one embodiment of the present invention, in which FIGS. 1 and 2 are plan views, and FIG. 3 is a side view. (1)...Stage (2 doors...Probe pin (3)
)... Polishing plate (4)... Contact plate (5)... IC
Tester (6)...Chip (7)...Ponding pad (8)...Wafer.
Claims (1)
端の接触抵抗を測定する機構をもちプローブピンの研磨
と接触抵抗診断を行うことができることを特徴とするウ
エハプローバ装置。(1) A wafer prober device having a mechanism for polishing the probe pin and a mechanism for measuring the contact resistance at the tip of the probe pin, and capable of polishing the probe pin and diagnosing the contact resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59279507A JPS61152034A (en) | 1984-12-25 | 1984-12-25 | Wafer prober |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59279507A JPS61152034A (en) | 1984-12-25 | 1984-12-25 | Wafer prober |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61152034A true JPS61152034A (en) | 1986-07-10 |
Family
ID=17612002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59279507A Pending JPS61152034A (en) | 1984-12-25 | 1984-12-25 | Wafer prober |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61152034A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0310176A (en) * | 1989-06-07 | 1991-01-17 | Nec Yamagata Ltd | Probing apparatus |
EP0905502A2 (en) * | 1997-01-22 | 1999-03-31 | Tokyo Electron Limited | A probe apparatus and a method for polishing a probe |
US5933309A (en) * | 1998-06-02 | 1999-08-03 | International Business Machines Corporation | Apparatus and method for monitoring the effects of contact resistance |
US6306187B1 (en) | 1997-04-22 | 2001-10-23 | 3M Innovative Properties Company | Abrasive material for the needle point of a probe card |
-
1984
- 1984-12-25 JP JP59279507A patent/JPS61152034A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0310176A (en) * | 1989-06-07 | 1991-01-17 | Nec Yamagata Ltd | Probing apparatus |
EP0905502A2 (en) * | 1997-01-22 | 1999-03-31 | Tokyo Electron Limited | A probe apparatus and a method for polishing a probe |
EP0905502A3 (en) * | 1997-01-22 | 1999-08-04 | Tokyo Electron Limited | A probe apparatus and a method for polishing a probe |
US6306187B1 (en) | 1997-04-22 | 2001-10-23 | 3M Innovative Properties Company | Abrasive material for the needle point of a probe card |
US5933309A (en) * | 1998-06-02 | 1999-08-03 | International Business Machines Corporation | Apparatus and method for monitoring the effects of contact resistance |
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