JPS6030147A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS6030147A
JPS6030147A JP13797383A JP13797383A JPS6030147A JP S6030147 A JPS6030147 A JP S6030147A JP 13797383 A JP13797383 A JP 13797383A JP 13797383 A JP13797383 A JP 13797383A JP S6030147 A JPS6030147 A JP S6030147A
Authority
JP
Japan
Prior art keywords
probe
pellet
pads
displacement
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13797383A
Other languages
Japanese (ja)
Inventor
Akio Ihayasaka
伊早坂 彰夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13797383A priority Critical patent/JPS6030147A/en
Publication of JPS6030147A publication Critical patent/JPS6030147A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To improve the yield of IC pellets and the working ratio of a test system for a semiconductor wafer, and to reduce man-hours on operation by forming a conductive pattern having no relation to a circuit function around a bonding pad in an adjacently insulating manner. CONSTITUTION:Paterns 3 for detecting the displacement of a probe are formed around bonding pads 2 in an insulating manner by insulating patterns 6. When inspecting an IC pellet 1, probe groups for a probe card in a wafer test system are positioned on the bonding pads 2, and electrical characteristics are measured. When the probe is displaced, the flaw of the probe is generated outside the bonding pads. When the probe is displaced, the bonding pads 2 and the patterns 3 for detecting the displacement of the probe are brought to a conductive state. Resistance values among the bonding pads 2 and pads 4 for detecting the displacement of the probe are measured, and alarm signals are given when the pads 2 and the pads 4 are brought to a conductive state. Defectives can be detected by the displacement of the probe, and the yield of the IC pellet is improved.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明Ii半導体ウェーハに関し、特にチェックパター
ンを備えたペレット領域を含む半導体ウェーハに関する
DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a semiconductor wafer, and more particularly to a semiconductor wafer including a pellet region with a check pattern.

〔従来技術〕[Prior art]

半導体集積回路(以下半導体ICと記す)の製造工程に
半導体クエーハ検査が有り、半導体ウェーハ上に製作さ
れ、後で切断されたと@1つのベレットになるICベレ
ット領域(以下単にICベレットと起す)が良品か不良
品かの選別を行なっている。
There is semiconductor wafer inspection in the manufacturing process of semiconductor integrated circuits (hereinafter referred to as semiconductor IC), and the IC pellet area (hereinafter simply referred to as IC pellet) that becomes a single pellet when manufactured on a semiconductor wafer and later cut is We are sorting out whether the products are good or defective.

半導体ウェーハの検査は、半導体ウェーハテストシステ
ムにより行なわれており、ICテスターとウェーハプロ
ーバーより構成されている。ウェーハプローバーtiI
cペレットのポンディングパッドにプローブカードの探
針群を正!i?iK接続させる為の装置である。
Inspection of semiconductor wafers is performed using a semiconductor wafer test system, which is composed of an IC tester and a wafer prober. wafer prober tiI
Place the tips of the probe card directly on the c-pellet's pounding pad! i? This is a device for connecting iK.

ICテスターはICベレットの電気特性を測定するもの
で、電圧印加電圧測定、電圧印加電流測定、電流印加電
圧測定等の測定機能が有る。
The IC tester measures the electrical characteristics of the IC pellet, and has measurement functions such as voltage applied voltage measurement, voltage applied current measurement, and current applied voltage measurement.

ウェーハ検査の工程は、ウェーハプローバーにより1コ
ースアライメント及び7アインアフイメントを行ないI
Cベレットのポンディングパッドにグローブカードの探
針を目合わせし、ICテスターにスタート信号を出す。
The wafer inspection process involves performing one-course alignment and seven-point alignment using a wafer prober.
Align the probe of the glove card with the C-bellet's pounding pad and send the start signal to the IC tester.

ICテスターはスタート信号を受けてテス)kW行し、
良品、不良品信号とテストエンド信号を出す。ウェーハ
プローバーは良品、不良品信号による処理全行ない、テ
ストエンド信号によりテストの終了を認識する。
The IC tester receives the start signal and runs in kW,
Outputs good product/defective product signals and test end signal. The wafer prober performs all processing based on the good product and defective product signals, and recognizes the end of the test using the test end signal.

テスト終了を認識すると5次のICペレットにプローブ
カードの探針群を付文てを行ないスタート信号全ICテ
スターに出す。
When the end of the test is recognized, a probe group of the probe card is attached to the fifth-order IC pellet and a start signal is sent to all IC testers.

この様にしてICベレットの試験を次々に実行していき
半導体ウェーハの試験を完了させる。ところで、このウ
ェーハ検査工程でプローブカードの探針が接触したポン
ディングパッドには付文あとの傷かのこる。ところでこ
のウェーハ検査工程中に探針がポンディングパッドの測
定点よジ位置ずれしく以後針すれと記す)探針の先端が
ポンディングパッド以外の部分にかかると、その位置に
傷をつけてしまう。しかし探針の一部がポンディングパ
ッドに接触している限りでは電気特性測定上は何等支障
ないので測定は連続して進行してしまう。しかし針ずれ
によりポンディングパッド以外に傷のついたICベレッ
トは電気特性が良品でも組立後の信頼性が低下するので
不良品としている。従って多くの不良品を出してしまう
とbう問題が生ずる。
In this manner, the tests on the IC pellets are executed one after another until the test on the semiconductor wafer is completed. Incidentally, the bonding pad that the probe of the probe card came into contact with during this wafer inspection process is left with a scratch as a mark. By the way, during this wafer inspection process, the tip of the probe shifts from the measurement point of the bonding pad (hereinafter referred to as "needle brushing"), and if the tip of the probe hits a part other than the bonding pad, it will damage that position. . However, as long as a portion of the probe is in contact with the bonding pad, there is no problem in measuring the electrical characteristics, so the measurement continues. However, an IC pellet with scratches other than the bonding pad due to needle misalignment is considered a defective product because even if the electrical characteristics are good, the reliability after assembly is reduced. Therefore, a problem arises when a large number of defective products are produced.

ウェーハプロービングに於いて起る針ずれの原因として
は、 ウェーハプローバーは、ファインアライメントを行なう
のにレーザ光線全利用しているが、ウェーハの表面状態
に依存しており、ICベレットの位置検出個所の表面状
態が粗れていて表面状態を誤認識した場合に針ずれとな
る。
The cause of needle misalignment that occurs during wafer probing is that although wafer probers use all laser beams to perform fine alignment, it depends on the surface condition of the wafer, and the position detection point of the IC pellet If the surface condition is rough and the surface condition is misrecognized, needle misalignment occurs.

又、プローブカードの探針が曲がってしまったり、プロ
ーバーのX軸及びY軸の送り機構、精度が劣化して累積
的にずれた場合にも針ずれの原因となる。
In addition, if the probe of the probe card is bent or the precision of the X-axis and Y-axis feeding mechanisms of the prober deteriorates, resulting in cumulative displacement, needle misalignment may also occur.

以上の様な原因で起こる針ずれに対して従来の半導体ウ
ェーハテストシステムには、針ずれ全検出する機能がな
く、針ずれの検出は、作業者の目視による発見に依存し
ていた。この為、従来の半導体ウェーハテストシステム
は、自動化されたシステムであるにもかかわらず、正常
動作を確認する為に止めなければならなかった。この針
ずれの検出作業は、針ずれしていないときは、システム
の停止時間と作業者の工数からして大きな損失である。
Conventional semiconductor wafer test systems do not have a function to detect all needle misalignments caused by the above-mentioned causes, and detection of needle misalignment relies on visual inspection by an operator. For this reason, conventional semiconductor wafer test systems, even though they are automated systems, had to be stopped to confirm normal operation. This work of detecting needle misalignment, when there is no needle misalignment, is a big loss in terms of system downtime and operator man-hours.

又、針ずれを発見した場合でも、針ずれが発生して発見
されるまでの間の良品ICペレットは針ずれによりポン
ディングパッド以外に傷を生じ不良品にしてしまってい
ることが多いという問題点があった。
Another problem is that even if needle misalignment is discovered, good IC pellets between the time the needle misalignment occurs and is discovered often have scratches on areas other than the bonding pad due to the needle misalignment, resulting in defective products. There was a point.

図面を参照し従来例を更に詳しく説明する。第1図は従
来の半導体ウェーッ・に於いて、ポンディングパッドに
対して1個所が針ずれを起Cしている状況を示す図であ
る。図において、ICペレットlにはポンディングパッ
ド2が整列して多数個形成されており、グローブカード
の探針群の接触によリボンディングパッドに付文あと5
が形成されるが、左上のポンディングパッドでは針ずれ
により傷がポンディングパッド外に発生している。
The conventional example will be explained in more detail with reference to the drawings. FIG. 1 is a diagram showing a situation in which a needle misalignment occurs at one location with respect to a bonding pad in a conventional semiconductor wafer. In the figure, a large number of bonding pads 2 are formed in an array on the IC pellet l, and when the probe group of the glove card comes into contact with the bonding pads, five markings are added to the bonding pads.
However, on the upper left pounding pad, a scratch has occurred outside the pounding pad due to needle misalignment.

通常ポンディングパッドの周囲はシリコン酸化[(Si
02)等の絶縁物にて構成されているので表面に針ずれ
が起り絶縁膜に傷がついても直ちに特性に関係すること
な(、ICペレット1が電気特性で良品であるならば試
験結果は良品となる。
Usually, the area around the bonding pad is silicon oxide [(Si
02), so even if the needle misalignment occurs on the surface and the insulating film is scratched, it will not immediately affect the characteristics (If IC pellet 1 has good electrical characteristics, the test results will be It will be a good product.

しかしICペレット1は1個所に針ずれが生じているの
で、組立て後の信頼性の問題から外観検査により不良品
とぜざるを得なくなり前に述べたような問題点が発生す
る。
However, since the IC pellet 1 has a needle misalignment at one location, it has no choice but to be judged as a defective product by visual inspection due to reliability problems after assembly, resulting in the above-mentioned problems.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、上記した問題点全解決し、ICベレッ
トの歩留りを向上し、半導体ウェーハテストシステムの
稼動率を向上し、作業工数を低減できる・半導体クエー
ハを提供することにある。
An object of the present invention is to provide a semiconductor wafer which can solve all of the above-mentioned problems, improve the yield of IC pellets, improve the operating rate of a semiconductor wafer test system, and reduce the number of work steps.

〔発明の構成〕[Structure of the invention]

本発明の半導体ウェーッ・は、半導体集積回路の機能と
は関係のない導電性パターンをそれぞれのポンディング
パッドの周辺にこれと隣接絶縁して設けたベレット領域
金倉んで構成される。
The semiconductor wafer of the present invention is composed of a bullet region in which a conductive pattern unrelated to the function of the semiconductor integrated circuit is provided around each bonding pad adjacent to and insulated from the conductive pattern.

〔実施例の説明〕[Explanation of Examples]

次に5本発明の実施例について1図面を参照して説明す
る。
Next, five embodiments of the present invention will be described with reference to one drawing.

第2図、第3図は本発明の詳細な説明するための半導体
ウェーハの要部パターン模式図である。
FIGS. 2 and 3 are pattern diagrams of main parts of a semiconductor wafer for explaining the present invention in detail.

第2図において、工はICベレット、2はボンアイング
パッド、3は針ずれ検出用のパターンでボンティングバ
ッドの周辺に絶縁パターン6により絶縁されて設けられ
ている。4は針ずれ検出用バッドである。
In FIG. 2, numeral 2 denotes an IC pellet, 2 denotes a bonding pad, and 3 denotes a pattern for detecting needle deviation, which is provided around the bonding pad insulated by an insulating pattern 6. 4 is a needle misalignment detection pad.

以上の構成によるICペレット1の検査にあたっては、
ウェーハテストシステムのプローブカードの探針群全ポ
ンディングパッドの上に位置させ電気的特性を測定する
が、上記探針がすべて所定のポンディングパッド上にあ
るときは正規の測定がされると共に探針はポンディング
パッド上から外れないため針ずれは何等生じない。
When inspecting the IC pellet 1 with the above configuration,
The probes of the probe card of the wafer test system are placed over all the bonding pads to measure the electrical characteristics. When all the probes are on the predetermined bonding pads, normal measurements are taken and the probes are not detected. Since the needle does not come off the top of the pounding pad, no needle displacement occurs.

しかしながら第2図に示すようにポンディングパッドの
左上の探針がずれると図示のように針の傷がポンディン
グパッド外に生じ、ICペレットは不良品となる。しか
し本ICペレットには針ずれ検出用パターンが設けであ
るので探針によりポンディングパッドと針ずれ検出用パ
ターンは導通状態となり針ずれが生じたことが検出でき
る。
However, as shown in FIG. 2, if the probe on the upper left of the bonding pad is displaced, a scratch from the needle will occur outside the bonding pad as shown in the figure, and the IC pellet will be defective. However, since this IC pellet is provided with a pattern for detecting needle deviation, the probe stylus brings the bonding pad and the pattern for detecting needle deviation to a conductive state, making it possible to detect the occurrence of needle deviation.

第4図は全探針が針ずれした場合全示し、各ボンティン
グバッド2と針ずれ検出用パターン3は従って、ICテ
スターにより各ポンディングパッド2間及び各ボンティ
ングバッド2と針ずれ検出用パッド4との間の抵抗値を
測定し、導通状態であったならばICテスターより傍報
償号を出し。
FIG. 4 shows the case where all the probes are misaligned. Therefore, each bonding pad 2 and the pattern 3 for detecting needle misalignment are measured by an IC tester between each bonding pad 2 and between each bonding pad 2 and for detecting needle misalignment. Measure the resistance value between it and the pad 4, and if it is in a conductive state, the IC tester will output a signal.

警報手段全動作させ5作業者に針ずれを知らせることが
できる。
The alarm means can be fully activated to notify five workers of needle misalignment.

第4図は本発明による針ずれ検出用パターンを設けたI
Cペレットの一例の要部の説明用拡大図である。図に於
いて、ポンディングパッド2と針ずれ検出用パターン3
は例えばシリコン酸化膜などの絶縁パターン6により絶
縁されている。しかもこれ全境界する絶縁パターンは狭
く形成されているので探針の接触により両者は容易に導
通状態となり針ずれが容易に検出できる。
FIG. 4 shows an I
It is an explanatory enlarged view of the principal part of an example of C pellet. In the figure, the bonding pad 2 and needle misalignment detection pattern 3
are insulated by an insulating pattern 6 such as a silicon oxide film. In addition, since the insulating pattern bordering all of these is formed narrowly, the two are easily brought into conduction by contact with the probe, and needle displacement can be easily detected.

なお、針ずれ検出用パターンは半導体ウェーハ上の全て
のペレットに施こしても、また選ばれた個所のペレット
のみに施こしてもよい。
Note that the pattern for detecting needle deviation may be applied to all pellets on the semiconductor wafer, or may be applied only to pellets at selected locations.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、従来のICテスタ
ーで検出不可能であった針ずれによる不良品の検出が可
能になりICペレットの歩留りが向上し、また半導体ク
エー71テストシステムの稼動率が向上し1作業者の作
業工数を低減できる半導体ウェーハを得ることができる
As explained above, according to the present invention, it is possible to detect defective products due to needle misalignment, which could not be detected with conventional IC testers, improving the yield of IC pellets, and improving the operating rate of the semiconductor Qua71 test system. It is possible to obtain a semiconductor wafer with improved performance and a reduction in the number of man-hours required for one worker.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体ウェーハに形成したICペレット
のポンディングパッド及び針ずれにより生じfc渇を示
す図、第2図、第3図は本発明の詳細な説明するための
半導体ウェーハの要部パターン模式図、第4図は本発明
の一実施例の要部パターン拡大図である。 l・・・・・・ICペレット、2・・・・・・ポンディ
ングパッド、3・・・・・・針ずれ検出用パターン、4
・・・・・・針ずれ検出用パッド、5−・・・・・針車
あと、6・・・・−・絶縁パターン。 畢Z例 半3回 +4国
FIG. 1 is a diagram showing the fc starvation caused by a conventional bonding pad of an IC pellet formed on a semiconductor wafer and needle misalignment, and FIGS. 2 and 3 are main parts of a semiconductor wafer for detailed explanation of the present invention. FIG. 4 is an enlarged view of the main part of the pattern according to an embodiment of the present invention. l...IC pellet, 2...Ponding pad, 3...Pattern for needle misalignment detection, 4
...Pad for needle misalignment detection, 5-...Needle wheel mark, 6...Insulation pattern. Bi Z example and a half 3 times + 4 countries

Claims (1)

【特許請求の範囲】[Claims] 半導体集積回路の機能とは関係のない導電性パターンを
それぞれのポンディングパッドの周辺にこれと隣接、絶
縁して設けたベレット領域を含むことを特徴とする半導
体ウェーハ。
A semiconductor wafer comprising a pellet region in which a conductive pattern unrelated to the function of a semiconductor integrated circuit is provided around, adjacent to, and insulated from each bonding pad.
JP13797383A 1983-07-28 1983-07-28 Semiconductor wafer Pending JPS6030147A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13797383A JPS6030147A (en) 1983-07-28 1983-07-28 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13797383A JPS6030147A (en) 1983-07-28 1983-07-28 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS6030147A true JPS6030147A (en) 1985-02-15

Family

ID=15211066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13797383A Pending JPS6030147A (en) 1983-07-28 1983-07-28 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS6030147A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137350A (en) * 1988-11-18 1990-05-25 Nec Corp Semiconductor integrated circuit
US6413035B1 (en) 1999-01-11 2002-07-02 Amada Company, Limited Sheet working system
JP2005333128A (en) * 2004-05-18 2005-12-02 Samsung Electronics Co Ltd Probe pad, substrate having semiconductor device, method of testing semiconductor device and tester for testing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114349A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Detecting method for displacement in testing stage of wafer
JPS5843535A (en) * 1981-09-09 1983-03-14 Nec Corp Semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114349A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Detecting method for displacement in testing stage of wafer
JPS5843535A (en) * 1981-09-09 1983-03-14 Nec Corp Semiconductor wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137350A (en) * 1988-11-18 1990-05-25 Nec Corp Semiconductor integrated circuit
US6413035B1 (en) 1999-01-11 2002-07-02 Amada Company, Limited Sheet working system
JP2005333128A (en) * 2004-05-18 2005-12-02 Samsung Electronics Co Ltd Probe pad, substrate having semiconductor device, method of testing semiconductor device and tester for testing semiconductor device

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