JPH0160938B2 - - Google Patents

Info

Publication number
JPH0160938B2
JPH0160938B2 JP56041291A JP4129181A JPH0160938B2 JP H0160938 B2 JPH0160938 B2 JP H0160938B2 JP 56041291 A JP56041291 A JP 56041291A JP 4129181 A JP4129181 A JP 4129181A JP H0160938 B2 JPH0160938 B2 JP H0160938B2
Authority
JP
Japan
Prior art keywords
etching
gas
hexafluorobenzene
oxide film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56041291A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57155732A (en
Inventor
Ryohei Kawabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP56041291A priority Critical patent/JPS57155732A/ja
Publication of JPS57155732A publication Critical patent/JPS57155732A/ja
Publication of JPH0160938B2 publication Critical patent/JPH0160938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
JP56041291A 1981-03-20 1981-03-20 Dry etching Granted JPS57155732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041291A JPS57155732A (en) 1981-03-20 1981-03-20 Dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041291A JPS57155732A (en) 1981-03-20 1981-03-20 Dry etching

Publications (2)

Publication Number Publication Date
JPS57155732A JPS57155732A (en) 1982-09-25
JPH0160938B2 true JPH0160938B2 (oth) 1989-12-26

Family

ID=12604338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041291A Granted JPS57155732A (en) 1981-03-20 1981-03-20 Dry etching

Country Status (1)

Country Link
JP (1) JPS57155732A (oth)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018016375A1 (ja) 2016-07-20 2018-01-25 昭和電工株式会社 ガス供給装置及びガス供給方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
KR100281345B1 (ko) * 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
JP4215294B2 (ja) * 1996-10-30 2009-01-28 独立行政法人産業技術総合研究所 ドライエッチング方法
US6183655B1 (en) 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6387287B1 (en) * 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
US6174451B1 (en) 1998-03-27 2001-01-16 Applied Materials, Inc. Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6849193B2 (en) 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US6432318B1 (en) * 2000-02-17 2002-08-13 Applied Materials, Inc. Dielectric etch process reducing striations and maintaining critical dimensions
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018016375A1 (ja) 2016-07-20 2018-01-25 昭和電工株式会社 ガス供給装置及びガス供給方法
US11427907B2 (en) 2016-07-20 2022-08-30 Showa Denko K.K. Gas supply apparatus and gas supply method

Also Published As

Publication number Publication date
JPS57155732A (en) 1982-09-25

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