JPH0133833B2 - - Google Patents

Info

Publication number
JPH0133833B2
JPH0133833B2 JP56018228A JP1822881A JPH0133833B2 JP H0133833 B2 JPH0133833 B2 JP H0133833B2 JP 56018228 A JP56018228 A JP 56018228A JP 1822881 A JP1822881 A JP 1822881A JP H0133833 B2 JPH0133833 B2 JP H0133833B2
Authority
JP
Japan
Prior art keywords
thin film
electrode
silicon
transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56018228A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57132191A (en
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP56018228A priority Critical patent/JPS57132191A/ja
Priority to GB8123089A priority patent/GB2081018B/en
Priority to FR8114639A priority patent/FR2488013A1/fr
Priority to US06/288,605 priority patent/US4582395A/en
Priority to DE19813130407 priority patent/DE3130407A1/de
Publication of JPS57132191A publication Critical patent/JPS57132191A/ja
Priority to HK888/87A priority patent/HK88887A/xx
Publication of JPH0133833B2 publication Critical patent/JPH0133833B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP56018228A 1980-07-31 1981-02-10 Active matrix substrate Granted JPS57132191A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56018228A JPS57132191A (en) 1981-02-10 1981-02-10 Active matrix substrate
GB8123089A GB2081018B (en) 1980-07-31 1981-07-27 Active matrix assembly for display device
FR8114639A FR2488013A1 (fr) 1980-07-31 1981-07-28 Dispositif a matrice d'elements actifs
US06/288,605 US4582395A (en) 1980-07-31 1981-07-30 Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor
DE19813130407 DE3130407A1 (de) 1980-07-31 1981-07-31 Aktivmatrixanordnung fuer eine anzeigevorrichtung
HK888/87A HK88887A (en) 1980-07-31 1987-11-26 "liquid crystal display device"

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56018228A JPS57132191A (en) 1981-02-10 1981-02-10 Active matrix substrate

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP61255018A Division JPS62148928A (ja) 1986-10-27 1986-10-27 液晶表示装置
JP61255019A Division JPS62148929A (ja) 1986-10-27 1986-10-27 液晶表示装置

Publications (2)

Publication Number Publication Date
JPS57132191A JPS57132191A (en) 1982-08-16
JPH0133833B2 true JPH0133833B2 (OSRAM) 1989-07-14

Family

ID=11965798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56018228A Granted JPS57132191A (en) 1980-07-31 1981-02-10 Active matrix substrate

Country Status (1)

Country Link
JP (1) JPS57132191A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8754995B2 (en) 2008-10-15 2014-06-17 Sony Corporation Liquid-crystal display device

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
JPS6052892A (ja) * 1983-09-01 1985-03-26 セイコーエプソン株式会社 液晶表示装置
JPH0731319B2 (ja) * 1984-05-08 1995-04-10 キヤノン株式会社 電子写真複写機
JPS63170682A (ja) * 1986-10-03 1988-07-14 セイコーエプソン株式会社 アクテイブマトリクス基板
JPS62148929A (ja) * 1986-10-27 1987-07-02 Seiko Epson Corp 液晶表示装置
JPS63307431A (ja) * 1987-06-10 1988-12-15 Hitachi Ltd 薄膜半導体表示装置
JPS63307776A (ja) * 1987-06-10 1988-12-15 Hitachi Ltd 薄膜半導体装置とその製造方法
JPH0244317A (ja) * 1988-08-05 1990-02-14 Hitachi Ltd 補助容量を有する液晶表示装置
DE69125886T2 (de) 1990-05-29 1997-11-20 Semiconductor Energy Lab Dünnfilmtransistoren
JPH06342272A (ja) * 1994-05-09 1994-12-13 Seiko Epson Corp 液晶表示装置
JP2791286B2 (ja) * 1994-12-05 1998-08-27 株式会社日立製作所 半導体装置
US5726720A (en) * 1995-03-06 1998-03-10 Canon Kabushiki Kaisha Liquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate
JPH08190366A (ja) * 1995-10-06 1996-07-23 Seiko Epson Corp アクティブマトリクス基板
JPH09171374A (ja) * 1996-09-02 1997-06-30 Seiko Epson Corp アクティブマトリクス基板
JPH11338439A (ja) 1998-03-27 1999-12-10 Semiconductor Energy Lab Co Ltd 半導体表示装置の駆動回路および半導体表示装置
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US6788108B2 (en) 2001-07-30 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55518A (en) * 1978-06-14 1980-01-05 Suwa Seikosha Kk Liquid crystal display unit
JPS552266A (en) * 1978-06-20 1980-01-09 Matsushita Electric Industrial Co Ltd Image display unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8754995B2 (en) 2008-10-15 2014-06-17 Sony Corporation Liquid-crystal display device

Also Published As

Publication number Publication date
JPS57132191A (en) 1982-08-16

Similar Documents

Publication Publication Date Title
US4582395A (en) Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor
JPH0133833B2 (OSRAM)
JP2999271B2 (ja) 表示装置
US5889291A (en) Semiconductor integrated circuit
JPS6149674B2 (OSRAM)
US6312968B1 (en) Method for fabricating an electrically addressable silicon-on-sapphire light valve
JP2584290B2 (ja) 液晶表示装置の製造方法
US20040212752A1 (en) Semiconductor element and liquid crystal display device using the same
JP2898509B2 (ja) アクティブマトリックス基板及びその製造方法
JP2668317B2 (ja) アクティブマトリクスパネル
JPH0142146B2 (OSRAM)
JPH0330308B2 (OSRAM)
JPS62148929A (ja) 液晶表示装置
JPH0247865B2 (OSRAM)
JPH05136169A (ja) 薄膜トランジスタの製造方法
JP2852899B2 (ja) 薄膜トランジスタの製造方法
JP2645694B2 (ja) 薄膜トランジスタの製造方法
JP2916896B2 (ja) アクティブマトリクスパネルの製造方法及び液晶装置の製造方法
JPH05243577A (ja) 薄膜トランジスタの製造方法
JPS62148928A (ja) 液晶表示装置
JPH09120084A (ja) 液晶装置の製造方法
JPH0132661B2 (OSRAM)
JPH0851219A (ja) 液晶表示装置及びその製造方法
JPH05235037A (ja) 薄膜トランジスタの製造方法
JPH0772821B2 (ja) 液晶表示装置の製造方法