JPH0130313B2 - - Google Patents
Info
- Publication number
- JPH0130313B2 JPH0130313B2 JP5306181A JP5306181A JPH0130313B2 JP H0130313 B2 JPH0130313 B2 JP H0130313B2 JP 5306181 A JP5306181 A JP 5306181A JP 5306181 A JP5306181 A JP 5306181A JP H0130313 B2 JPH0130313 B2 JP H0130313B2
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- cell
- gate
- control gate
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000009977 dual effect Effects 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7882—Programmable transistors with only two possible levels of programmation charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/153,359 US4334292A (en) | 1980-05-27 | 1980-05-27 | Low voltage electrically erasable programmable read only memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5710977A JPS5710977A (en) | 1982-01-20 |
JPH0130313B2 true JPH0130313B2 (de) | 1989-06-19 |
Family
ID=22546878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5306181A Granted JPS5710977A (en) | 1980-05-27 | 1981-04-10 | Semiconductor circuit |
Country Status (8)
Country | Link |
---|---|
US (1) | US4334292A (de) |
EP (1) | EP0040701B1 (de) |
JP (1) | JPS5710977A (de) |
AU (1) | AU540886B2 (de) |
BR (1) | BR8103000A (de) |
CA (1) | CA1149064A (de) |
DE (1) | DE3176835D1 (de) |
ES (1) | ES8204209A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4380057A (en) * | 1980-10-27 | 1983-04-12 | International Business Machines Corporation | Electrically alterable double dense memory |
JPS57204172A (en) * | 1981-06-08 | 1982-12-14 | Ibm | Field effect transistor |
US4939559A (en) * | 1981-12-14 | 1990-07-03 | International Business Machines Corporation | Dual electron injector structures using a conductive oxide between injectors |
US4535349A (en) * | 1981-12-31 | 1985-08-13 | International Business Machines Corporation | Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing |
JPS5960797A (ja) * | 1982-09-30 | 1984-04-06 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS59110215U (ja) * | 1983-01-13 | 1984-07-25 | サンデン株式会社 | 車輌用空気調和装置の制御回路 |
US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
US4717943A (en) * | 1984-06-25 | 1988-01-05 | International Business Machines | Charge storage structure for nonvolatile memories |
JPS6113671A (ja) * | 1984-06-25 | 1986-01-21 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | メモリのチヤ−ジ記憶構造 |
US4729115A (en) * | 1984-09-27 | 1988-03-01 | International Business Machines Corporation | Non-volatile dynamic random access memory cell |
US4665417A (en) * | 1984-09-27 | 1987-05-12 | International Business Machines Corporation | Non-volatile dynamic random access memory cell |
JPS6180866A (ja) * | 1984-09-27 | 1986-04-24 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 不揮発性半導体メモリ・セル |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
US4665503A (en) * | 1985-01-15 | 1987-05-12 | Massachusetts Institute Of Technology | Non-volatile memory devices |
US4861976A (en) * | 1988-06-06 | 1989-08-29 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer |
KR920001402B1 (ko) * | 1988-11-29 | 1992-02-13 | 삼성전자 주식회사 | 불휘발성 반도체 기억소자 |
JPH0777240B2 (ja) * | 1989-01-20 | 1995-08-16 | 富士通株式会社 | 半導体装置の製造方法 |
US5258095A (en) * | 1989-01-20 | 1993-11-02 | Fujitsu Limited | Method for producing a device having an insulator sandwiched between two semiconductor layers |
DE68913190T2 (de) * | 1989-03-31 | 1994-08-04 | Philips Nv | EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht. |
US5122985A (en) * | 1990-04-16 | 1992-06-16 | Giovani Santin | Circuit and method for erasing eeprom memory arrays to prevent over-erased cells |
JPH05102438A (ja) * | 1991-10-04 | 1993-04-23 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US5138576A (en) * | 1991-11-06 | 1992-08-11 | Altera Corporation | Method and apparatus for erasing an array of electrically erasable EPROM cells |
US5359571A (en) * | 1993-01-27 | 1994-10-25 | Yu Shih Chiang | Memory array having a plurality of address partitions |
KR0149528B1 (ko) * | 1994-05-25 | 1998-10-01 | 김주용 | 반도체 소자의 콘트롤 게이트 전극 형성방법 |
US5818082A (en) * | 1996-03-04 | 1998-10-06 | Advanced Micro Devices, Inc. | E2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereof |
US5703809A (en) * | 1996-10-01 | 1997-12-30 | Microchip Technology Incorporated | Overcharge/discharge voltage regulator for EPROM memory array |
US7569882B2 (en) * | 2003-12-23 | 2009-08-04 | Interuniversitair Microelektronica Centrum (Imec) | Non-volatile multibit memory cell and method of manufacturing thereof |
US7092288B2 (en) * | 2004-02-04 | 2006-08-15 | Atmel Corporation | Non-volatile memory array with simultaneous write and erase feature |
US7020020B1 (en) * | 2004-09-21 | 2006-03-28 | Atmel Corporation | Low voltage non-volatile memory cells using twin bit line current sensing |
US7414460B1 (en) | 2006-03-31 | 2008-08-19 | Integrated Device Technology, Inc. | System and method for integrated circuit charge recycling |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5099281A (de) * | 1973-12-28 | 1975-08-06 | ||
JPS51117838A (en) * | 1975-04-10 | 1976-10-16 | Shindengen Electric Mfg Co Ltd | Semiconductor memory device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825946A (en) * | 1971-01-15 | 1974-07-23 | Intel Corp | Electrically alterable floating gate device and method for altering same |
US4161039A (en) * | 1976-12-15 | 1979-07-10 | Siemens Aktiengesellschaft | N-Channel storage FET |
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
US4274012A (en) * | 1979-01-24 | 1981-06-16 | Xicor, Inc. | Substrate coupled floating gate memory cell |
-
1980
- 1980-05-27 US US06/153,359 patent/US4334292A/en not_active Expired - Lifetime
-
1981
- 1981-03-10 CA CA000372695A patent/CA1149064A/en not_active Expired
- 1981-04-10 JP JP5306181A patent/JPS5710977A/ja active Granted
- 1981-04-28 EP EP81103165A patent/EP0040701B1/de not_active Expired
- 1981-04-28 DE DE8181103165T patent/DE3176835D1/de not_active Expired
- 1981-05-01 AU AU70075/81A patent/AU540886B2/en not_active Ceased
- 1981-05-14 BR BR8103000A patent/BR8103000A/pt unknown
- 1981-05-26 ES ES502489A patent/ES8204209A1/es not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5099281A (de) * | 1973-12-28 | 1975-08-06 | ||
JPS51117838A (en) * | 1975-04-10 | 1976-10-16 | Shindengen Electric Mfg Co Ltd | Semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
EP0040701B1 (de) | 1988-08-03 |
BR8103000A (pt) | 1982-02-02 |
EP0040701A1 (de) | 1981-12-02 |
ES502489A0 (es) | 1982-04-01 |
AU540886B2 (en) | 1984-12-06 |
AU7007581A (en) | 1981-12-03 |
JPS5710977A (en) | 1982-01-20 |
CA1149064A (en) | 1983-06-28 |
ES8204209A1 (es) | 1982-04-01 |
DE3176835D1 (en) | 1988-09-08 |
US4334292A (en) | 1982-06-08 |
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