JPH01290595A - Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法 - Google Patents
Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法Info
- Publication number
- JPH01290595A JPH01290595A JP11692488A JP11692488A JPH01290595A JP H01290595 A JPH01290595 A JP H01290595A JP 11692488 A JP11692488 A JP 11692488A JP 11692488 A JP11692488 A JP 11692488A JP H01290595 A JPH01290595 A JP H01290595A
- Authority
- JP
- Japan
- Prior art keywords
- al2o3
- single crystal
- crystal film
- grown
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 18
- 229910003158 γ-Al2O3 Inorganic materials 0.000 abstract description 19
- 229910007264 Si2H6 Inorganic materials 0.000 abstract description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000000635 electron micrograph Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002524 electron diffraction data Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 241000238557 Decapoda Species 0.000 description 1
- 229910000525 Si/Al2O3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008425 Si—Al2O3 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11692488A JPH01290595A (ja) | 1988-05-16 | 1988-05-16 | Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11692488A JPH01290595A (ja) | 1988-05-16 | 1988-05-16 | Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01290595A true JPH01290595A (ja) | 1989-11-22 |
| JPH057359B2 JPH057359B2 (enrdf_load_stackoverflow) | 1993-01-28 |
Family
ID=14699049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11692488A Granted JPH01290595A (ja) | 1988-05-16 | 1988-05-16 | Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01290595A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07187892A (ja) * | 1991-06-28 | 1995-07-25 | Internatl Business Mach Corp <Ibm> | シリコン及びその形成方法 |
-
1988
- 1988-05-16 JP JP11692488A patent/JPH01290595A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07187892A (ja) * | 1991-06-28 | 1995-07-25 | Internatl Business Mach Corp <Ibm> | シリコン及びその形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH057359B2 (enrdf_load_stackoverflow) | 1993-01-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |