JPH01287951A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH01287951A JPH01287951A JP11701588A JP11701588A JPH01287951A JP H01287951 A JPH01287951 A JP H01287951A JP 11701588 A JP11701588 A JP 11701588A JP 11701588 A JP11701588 A JP 11701588A JP H01287951 A JPH01287951 A JP H01287951A
- Authority
- JP
- Japan
- Prior art keywords
- film
- element isolation
- isolation region
- oxidation
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000002955 isolation Methods 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims description 40
- 238000007254 oxidation reaction Methods 0.000 claims description 40
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 24
- 239000010703 silicon Substances 0.000 abstract description 24
- 238000005530 etching Methods 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 241000293849 Cordylanthus Species 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11701588A JPH01287951A (ja) | 1988-05-16 | 1988-05-16 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11701588A JPH01287951A (ja) | 1988-05-16 | 1988-05-16 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01287951A true JPH01287951A (ja) | 1989-11-20 |
| JPH0566011B2 JPH0566011B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-20 |
Family
ID=14701337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11701588A Granted JPH01287951A (ja) | 1988-05-16 | 1988-05-16 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01287951A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10135318A (ja) * | 1996-10-30 | 1998-05-22 | Lg Semicon Co Ltd | 半導体装置の隔離膜形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62217629A (ja) * | 1986-03-19 | 1987-09-25 | Fujitsu Ltd | 半導体装置 |
-
1988
- 1988-05-16 JP JP11701588A patent/JPH01287951A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62217629A (ja) * | 1986-03-19 | 1987-09-25 | Fujitsu Ltd | 半導体装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10135318A (ja) * | 1996-10-30 | 1998-05-22 | Lg Semicon Co Ltd | 半導体装置の隔離膜形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566011B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |