JPH0127589B2 - - Google Patents
Info
- Publication number
- JPH0127589B2 JPH0127589B2 JP53147605A JP14760578A JPH0127589B2 JP H0127589 B2 JPH0127589 B2 JP H0127589B2 JP 53147605 A JP53147605 A JP 53147605A JP 14760578 A JP14760578 A JP 14760578A JP H0127589 B2 JPH0127589 B2 JP H0127589B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- contact hole
- gate electrode
- source
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14760578A JPS5574175A (en) | 1978-11-29 | 1978-11-29 | Preparing interpolation type mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14760578A JPS5574175A (en) | 1978-11-29 | 1978-11-29 | Preparing interpolation type mos semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574175A JPS5574175A (en) | 1980-06-04 |
| JPH0127589B2 true JPH0127589B2 (OSRAM) | 1989-05-30 |
Family
ID=15434100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14760578A Granted JPS5574175A (en) | 1978-11-29 | 1978-11-29 | Preparing interpolation type mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574175A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5785226A (en) * | 1980-11-18 | 1982-05-27 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS5810856A (ja) * | 1981-07-10 | 1983-01-21 | Nec Corp | 相補型半導体集積回路装置の製造方法 |
| JPS5821858A (ja) * | 1981-07-31 | 1983-02-08 | Nec Corp | 半導体装置の製造方法 |
| JPS5885559A (ja) * | 1981-11-18 | 1983-05-21 | Nec Corp | Ｃｍｏｓ型半導体集積回路装置 |
| KR930009127B1 (ko) * | 1991-02-25 | 1993-09-23 | 삼성전자 주식회사 | 스택형캐패시터를구비하는반도체메모리장치 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51116675A (en) * | 1975-04-05 | 1976-10-14 | Fujitsu Ltd | Manufacturing method for a semiconductor device |
| JPS51134566A (en) * | 1975-05-17 | 1976-11-22 | Fujitsu Ltd | Semiconductor unit manufacturing process |
| JPS51137384A (en) * | 1975-05-23 | 1976-11-27 | Nippon Telegr & Teleph Corp <Ntt> | Semi conductor device manufacturing method |
-
1978
- 1978-11-29 JP JP14760578A patent/JPS5574175A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5574175A (en) | 1980-06-04 |
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