JPH0124760B2 - - Google Patents

Info

Publication number
JPH0124760B2
JPH0124760B2 JP58078899A JP7889983A JPH0124760B2 JP H0124760 B2 JPH0124760 B2 JP H0124760B2 JP 58078899 A JP58078899 A JP 58078899A JP 7889983 A JP7889983 A JP 7889983A JP H0124760 B2 JPH0124760 B2 JP H0124760B2
Authority
JP
Japan
Prior art keywords
crystal
melt
gaas
magnetic field
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58078899A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59203793A (ja
Inventor
Tsuguo Fukuda
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP7889983A priority Critical patent/JPS59203793A/ja
Priority to US06/571,091 priority patent/US4637854A/en
Priority to GB08401194A priority patent/GB2136706B/en
Publication of JPS59203793A publication Critical patent/JPS59203793A/ja
Publication of JPH0124760B2 publication Critical patent/JPH0124760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7889983A 1983-01-18 1983-05-07 半絶縁性ガリウム砒素単結晶の製造方法 Granted JPS59203793A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7889983A JPS59203793A (ja) 1983-05-07 1983-05-07 半絶縁性ガリウム砒素単結晶の製造方法
US06/571,091 US4637854A (en) 1983-01-18 1984-01-16 Method for producing GaAs single crystal
GB08401194A GB2136706B (en) 1983-01-18 1984-01-17 Liquid encapsulated crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7889983A JPS59203793A (ja) 1983-05-07 1983-05-07 半絶縁性ガリウム砒素単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS59203793A JPS59203793A (ja) 1984-11-17
JPH0124760B2 true JPH0124760B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-05-12

Family

ID=13674664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7889983A Granted JPS59203793A (ja) 1983-01-18 1983-05-07 半絶縁性ガリウム砒素単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS59203793A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61286294A (ja) * 1985-06-07 1986-12-16 Toshiba Corp 単結晶引上装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57123898A (en) * 1981-01-20 1982-08-02 Toshiba Corp Preparation of semi-insulating gaas single crystal

Also Published As

Publication number Publication date
JPS59203793A (ja) 1984-11-17

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