JPH0122991B2 - - Google Patents

Info

Publication number
JPH0122991B2
JPH0122991B2 JP56112571A JP11257181A JPH0122991B2 JP H0122991 B2 JPH0122991 B2 JP H0122991B2 JP 56112571 A JP56112571 A JP 56112571A JP 11257181 A JP11257181 A JP 11257181A JP H0122991 B2 JPH0122991 B2 JP H0122991B2
Authority
JP
Japan
Prior art keywords
sno
type
ito
amorphous silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56112571A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5814582A (ja
Inventor
Yoshihiro Hamakawa
Yoshihisa Oowada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP56112571A priority Critical patent/JPS5814582A/ja
Priority to DE8282106293T priority patent/DE3280112D1/de
Priority to DE8888117644T priority patent/DE3280418T2/de
Priority to EP82106293A priority patent/EP0070509B2/de
Priority to EP88117644A priority patent/EP0309000B1/de
Priority to US06/399,312 priority patent/US4450316A/en
Publication of JPS5814582A publication Critical patent/JPS5814582A/ja
Priority to US06/552,952 priority patent/US4491682A/en
Priority to US06/552,951 priority patent/US4499331A/en
Publication of JPH0122991B2 publication Critical patent/JPH0122991B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
JP56112571A 1981-07-17 1981-07-17 高効率のアモルフアスシリコン系太陽電池 Granted JPS5814582A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP56112571A JPS5814582A (ja) 1981-07-17 1981-07-17 高効率のアモルフアスシリコン系太陽電池
DE8282106293T DE3280112D1 (de) 1981-07-17 1982-07-14 Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium.
DE8888117644T DE3280418T2 (de) 1981-07-17 1982-07-14 Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium.
EP82106293A EP0070509B2 (de) 1981-07-17 1982-07-14 Amorpher Halbleiter und photovoltaische Einrichtung aus amorphem Silizium
EP88117644A EP0309000B1 (de) 1981-07-17 1982-07-14 Amorpher Halbleiter und photovoltaische Vorrichtung aus amorphem Silizium
US06/399,312 US4450316A (en) 1981-07-17 1982-07-19 Amorphous silicon photovoltaic device having two-layer transparent electrode
US06/552,952 US4491682A (en) 1981-07-17 1983-11-17 Amorphous silicon photovoltaic device including a two-layer transparent electrode
US06/552,951 US4499331A (en) 1981-07-17 1983-11-17 Amorphous semiconductor and amorphous silicon photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56112571A JPS5814582A (ja) 1981-07-17 1981-07-17 高効率のアモルフアスシリコン系太陽電池

Publications (2)

Publication Number Publication Date
JPS5814582A JPS5814582A (ja) 1983-01-27
JPH0122991B2 true JPH0122991B2 (de) 1989-04-28

Family

ID=14590036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56112571A Granted JPS5814582A (ja) 1981-07-17 1981-07-17 高効率のアモルフアスシリコン系太陽電池

Country Status (1)

Country Link
JP (1) JPS5814582A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958874A (ja) * 1982-09-29 1984-04-04 Toshiba Corp アモルフアスシリコン太陽電池
JPS58151072A (ja) * 1983-02-08 1983-09-08 Konishiroku Photo Ind Co Ltd 光電変換素子及びその製造方法
JPS58151073A (ja) * 1983-02-08 1983-09-08 Konishiroku Photo Ind Co Ltd 光電変換素子及びその製造方法
JPS59161881A (ja) * 1983-03-07 1984-09-12 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
IN165761B (de) * 1983-07-28 1990-01-06 Energy Conversion Devices Inc
JPS60103683A (ja) * 1983-11-10 1985-06-07 Kanegafuchi Chem Ind Co Ltd 半導体装置用基板
JPS61168272A (ja) * 1985-01-21 1986-07-29 Semiconductor Energy Lab Co Ltd 非単結剤珪素太陽電池作製方法
JPS6472570A (en) * 1987-09-11 1989-03-17 Sanyo Electric Co Photovoltaic device

Also Published As

Publication number Publication date
JPS5814582A (ja) 1983-01-27

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