JPH0121633B2 - - Google Patents
Info
- Publication number
- JPH0121633B2 JPH0121633B2 JP56209745A JP20974581A JPH0121633B2 JP H0121633 B2 JPH0121633 B2 JP H0121633B2 JP 56209745 A JP56209745 A JP 56209745A JP 20974581 A JP20974581 A JP 20974581A JP H0121633 B2 JPH0121633 B2 JP H0121633B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- guard ring
- base
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000005684 electric field Effects 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20974581A JPS58114434A (ja) | 1981-12-28 | 1981-12-28 | 高耐圧半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20974581A JPS58114434A (ja) | 1981-12-28 | 1981-12-28 | 高耐圧半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58114434A JPS58114434A (ja) | 1983-07-07 |
JPH0121633B2 true JPH0121633B2 (it) | 1989-04-21 |
Family
ID=16577928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20974581A Granted JPS58114434A (ja) | 1981-12-28 | 1981-12-28 | 高耐圧半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58114434A (it) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012004466A (ja) * | 2010-06-21 | 2012-01-05 | Hitachi Ltd | 半導体装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101345254A (zh) | 2007-07-12 | 2009-01-14 | 富士电机电子技术株式会社 | 半导体器件 |
CN103681808A (zh) * | 2012-09-09 | 2014-03-26 | 苏州英能电子科技有限公司 | 含场板结构的横向双极型晶体管 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49130184A (it) * | 1973-04-11 | 1974-12-13 | ||
JPS57155773A (en) * | 1981-03-20 | 1982-09-25 | Sanyo Electric Co Ltd | High pressure-resistant planar transistor |
-
1981
- 1981-12-28 JP JP20974581A patent/JPS58114434A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49130184A (it) * | 1973-04-11 | 1974-12-13 | ||
JPS57155773A (en) * | 1981-03-20 | 1982-09-25 | Sanyo Electric Co Ltd | High pressure-resistant planar transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012004466A (ja) * | 2010-06-21 | 2012-01-05 | Hitachi Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS58114434A (ja) | 1983-07-07 |
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