JPH0120542B2 - - Google Patents
Info
- Publication number
- JPH0120542B2 JPH0120542B2 JP5126880A JP5126880A JPH0120542B2 JP H0120542 B2 JPH0120542 B2 JP H0120542B2 JP 5126880 A JP5126880 A JP 5126880A JP 5126880 A JP5126880 A JP 5126880A JP H0120542 B2 JPH0120542 B2 JP H0120542B2
- Authority
- JP
- Japan
- Prior art keywords
- drain
- wiring
- gate
- polycrystalline silicon
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5126880A JPS56147472A (en) | 1980-04-18 | 1980-04-18 | Read only semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5126880A JPS56147472A (en) | 1980-04-18 | 1980-04-18 | Read only semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56147472A JPS56147472A (en) | 1981-11-16 |
| JPH0120542B2 true JPH0120542B2 (enrdf_load_stackoverflow) | 1989-04-17 |
Family
ID=12882191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5126880A Granted JPS56147472A (en) | 1980-04-18 | 1980-04-18 | Read only semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56147472A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59124761A (ja) * | 1983-01-04 | 1984-07-18 | Nec Corp | 読み出し専用メモリ |
| JPS59124760A (ja) * | 1983-01-04 | 1984-07-18 | Nec Corp | 読み出し専用メモリ |
| JPS60169164A (ja) * | 1984-02-10 | 1985-09-02 | Nippon Texas Instr Kk | Ｖ形マスクｒｏｍ装置 |
-
1980
- 1980-04-18 JP JP5126880A patent/JPS56147472A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56147472A (en) | 1981-11-16 |
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