JPH01162234U - - Google Patents

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Publication number
JPH01162234U
JPH01162234U JP5521188U JP5521188U JPH01162234U JP H01162234 U JPH01162234 U JP H01162234U JP 5521188 U JP5521188 U JP 5521188U JP 5521188 U JP5521188 U JP 5521188U JP H01162234 U JPH01162234 U JP H01162234U
Authority
JP
Japan
Prior art keywords
heat treatment
semiconductor
heat
treatment apparatus
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5521188U
Other languages
Japanese (ja)
Other versions
JPH0614480Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988055211U priority Critical patent/JPH0614480Y2/en
Publication of JPH01162234U publication Critical patent/JPH01162234U/ja
Application granted granted Critical
Publication of JPH0614480Y2 publication Critical patent/JPH0614480Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図乃至第３図は本考案の実施例に係る半導
体熱拡散装置を示し、第１図は全体断面概略図、
第２図は該装置に用いるボート形状を示す斜視図
、第３図ａ，ｂは前記ガス流緩衝部材の断面図と
その拡大図である。第４図は前記ボート上に溶着
される緩衝板の変形例を示す要部斜視図である。
第５図は従来技術に係る半導体熱拡散装置を示す
全体断面概略図である。 １：炉芯管、２：発熱体、３：ボート、４：半
導体ウエハ群、８Ａ…：ガス流緩衝部材、８ａ，
８ｂ：熱線散乱手段（８ａ：気泡、８ｂ：微小凹
凸面）、１０：熱処理区域、１１ａ，１２ａ：気
密シール部位。 1 to 3 show a semiconductor thermal diffusion device according to an embodiment of the present invention, and FIG. 1 is a schematic overall cross-sectional view;
FIG. 2 is a perspective view showing a boat shape used in the device, and FIGS. 3a and 3b are a sectional view and an enlarged view of the gas flow buffer member. FIG. 4 is a perspective view of a main part showing a modification of the buffer plate welded onto the boat.
FIG. 5 is an overall cross-sectional schematic diagram showing a semiconductor heat diffusion device according to the prior art. 1: Furnace core tube, 2: Heating element, 3: Boat, 4: Semiconductor wafer group, 8A...: Gas flow buffer member, 8a,
8b: Heat ray scattering means (8a: air bubbles, 8b: minute uneven surface), 10: heat treatment area, 11a, 12a: airtight sealing area.

Claims (1)

【実用新案登録請求の範囲】 (1) 半導体ウエハ群の熱処理を行う半導体熱処
理装置において、熱処理区域内に収納された半導
体ウエハ群の外側の任意の個所に、ほぼ透明材料
で形成されたガス流緩衝部材を配するとともに、
緩衝部材の前記熱処理区域よりの放射熱が通過す
る面内又は／及び面上に熱線散乱手段を設けた事
を特徴とする半導体熱処理装置。 (2) 前記半導体熱処理装置が、熱処理区域から
外れた個所に気密シール部位を持ち、前記熱処理
区域内に収納された半導体ウエハ群と気密シール
部位間の任意個所に前記熱線散乱手段を設けた緩
衝部材を配置した請求項(1)記載の半導体熱処理
装置。 (3) 前記熱線散乱手段が、前記緩衝部材内に内
包させた１cm3当り６０００個以上の微小気泡の
集合体である請求項(1)又は(2)記載の半導体熱処
理装置。[Claims for Utility Model Registration] (1) In a semiconductor heat treatment apparatus that heat-treats a group of semiconductor wafers, a gas flow formed of a substantially transparent material is provided at any location outside the group of semiconductor wafers housed in a heat treatment area. Along with arranging a buffer member,
A semiconductor heat treatment apparatus, characterized in that a heat ray scattering means is provided within and/or on a surface through which radiant heat from the heat treatment area of the buffer member passes. (2) A buffer in which the semiconductor heat treatment apparatus has an airtight sealing area at a location outside the heat treatment area, and the heat ray scattering means is provided at an arbitrary location between the group of semiconductor wafers housed in the heat treatment area and the airtight sealing area. 2. The semiconductor heat treatment apparatus according to claim 1, further comprising: a member arranged therein. (3) The semiconductor heat processing apparatus according to claim (1) or (2), wherein the heat ray scattering means is an aggregate of 6,000 or more microbubbles per cm 3 contained in the buffer member.
JP1988055211U 1988-04-26 1988-04-26 Semiconductor heat treatment equipment Expired - Lifetime JPH0614480Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988055211U JPH0614480Y2 (en) 1988-04-26 1988-04-26 Semiconductor heat treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988055211U JPH0614480Y2 (en) 1988-04-26 1988-04-26 Semiconductor heat treatment equipment

Publications (2)

Publication Number Publication Date
JPH01162234U true JPH01162234U (en) 1989-11-10
JPH0614480Y2 JPH0614480Y2 (en) 1994-04-13

Family

ID=31281109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988055211U Expired - Lifetime JPH0614480Y2 (en) 1988-04-26 1988-04-26 Semiconductor heat treatment equipment

Country Status (1)

Country Link
JP (1) JPH0614480Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001031694A1 (en) * 1999-10-28 2001-05-03 Applied Materials Inc. Apparatus for manufacturing semiconductor device
JP2005150573A (en) * 2003-11-19 2005-06-09 Kyocera Corp Impurity diffusion device

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434753A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Thermal balancing jig
JPS5623741A (en) * 1979-08-06 1981-03-06 Toshiba Ceramics Co Ltd Quartz glass furnace core tube for manufacturing semiconductor
JPS5674923A (en) * 1979-11-22 1981-06-20 Oki Electric Ind Co Ltd Core tube device for furnace
JPS5748270U (en) * 1980-08-30 1982-03-18
JPS57162329A (en) * 1981-03-30 1982-10-06 Fujitsu Ltd Heat treatment of semiconductor substrate
JPS5810354U (en) * 1981-07-15 1983-01-22 株式会社日立製作所 Field emission cathode
JPS58148427A (en) * 1982-10-20 1983-09-03 Toshiba Ceramics Co Ltd Quartz glass core tube for manufacture of semiconductor
JPS6122454A (en) * 1984-07-11 1986-01-31 Canon Inc Photomagnetic recording medium
JPS62123713A (en) * 1985-11-25 1987-06-05 Hitachi Hokkai Semiconductor Ltd Wafer charging jig and wafer surface treating method
JPS62259434A (en) * 1986-04-14 1987-11-11 Shinetsu Sekiei Kk Quartz glass jig
JPS6317300A (en) * 1986-07-08 1988-01-25 Shinetsu Sekiei Kk Furnace core tube made of quartz glass
JPS6331530U (en) * 1986-08-14 1988-03-01
JPS6358822A (en) * 1986-08-29 1988-03-14 Shinetsu Sekiei Kk Wafer conveying and retaining jig made of silica glass

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434753A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Thermal balancing jig
JPS5623741A (en) * 1979-08-06 1981-03-06 Toshiba Ceramics Co Ltd Quartz glass furnace core tube for manufacturing semiconductor
JPS5674923A (en) * 1979-11-22 1981-06-20 Oki Electric Ind Co Ltd Core tube device for furnace
JPS5748270U (en) * 1980-08-30 1982-03-18
JPS57162329A (en) * 1981-03-30 1982-10-06 Fujitsu Ltd Heat treatment of semiconductor substrate
JPS5810354U (en) * 1981-07-15 1983-01-22 株式会社日立製作所 Field emission cathode
JPS58148427A (en) * 1982-10-20 1983-09-03 Toshiba Ceramics Co Ltd Quartz glass core tube for manufacture of semiconductor
JPS6122454A (en) * 1984-07-11 1986-01-31 Canon Inc Photomagnetic recording medium
JPS62123713A (en) * 1985-11-25 1987-06-05 Hitachi Hokkai Semiconductor Ltd Wafer charging jig and wafer surface treating method
JPS62259434A (en) * 1986-04-14 1987-11-11 Shinetsu Sekiei Kk Quartz glass jig
JPS6317300A (en) * 1986-07-08 1988-01-25 Shinetsu Sekiei Kk Furnace core tube made of quartz glass
JPS6331530U (en) * 1986-08-14 1988-03-01
JPS6358822A (en) * 1986-08-29 1988-03-14 Shinetsu Sekiei Kk Wafer conveying and retaining jig made of silica glass

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001031694A1 (en) * 1999-10-28 2001-05-03 Applied Materials Inc. Apparatus for manufacturing semiconductor device
JP2005150573A (en) * 2003-11-19 2005-06-09 Kyocera Corp Impurity diffusion device

Also Published As

Publication number Publication date
JPH0614480Y2 (en) 1994-04-13

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