JPS62101227U - - Google Patents
Info
- Publication number
- JPS62101227U JPS62101227U JP19110685U JP19110685U JPS62101227U JP S62101227 U JPS62101227 U JP S62101227U JP 19110685 U JP19110685 U JP 19110685U JP 19110685 U JP19110685 U JP 19110685U JP S62101227 U JPS62101227 U JP S62101227U
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- treatment furnace
- semiconductor
- treatment apparatus
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 238000009423 ventilation Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の１実施例装置の構成を示す断
面図、第２図及び第３図はそれぞれウエハを保持
するサスペンダの１実施例を示す斜視図、第４図
は熱処理炉内のガス流の状態を示す模式図、第５
図は同じくガス流を示す模式立体図、第６図より
第８図はそれぞれ従来装置の概要を示す断面図、
第９図は本考案装置におけるウエハの保持状態を
示す側断面図、第１０図は従来装置における保持
状態を示す側断面図である。
１…石英管、２…ヒーター、３…サポート、３
１…支持棒、３２…石英保護管、３３…石英ボー
ト、４…被処理ウエハ、５，６…拡散板、７…ガ
スノズル、１０…石英管、１１…ヒーター、１２
…ガス導入孔、１３…サポート、１４…バツフア
板、１５…サスペンダ、１６…ビーム、１７…ウ
エハ、１８…熱遮蔽板。
FIG. 1 is a sectional view showing the configuration of an apparatus according to an embodiment of the present invention, FIGS. 2 and 3 are perspective views showing an embodiment of suspenders for holding a wafer, and FIG. 4 is a diagram showing the gas inside the heat treatment furnace. Schematic diagram showing the state of flow, No. 5
The figure is a schematic three-dimensional diagram showing the gas flow, and Figures 6 to 8 are cross-sectional views showing the outline of the conventional device, respectively.
FIG. 9 is a side sectional view showing the wafer held in the device of the present invention, and FIG. 10 is a side sectional view showing the wafer held in the conventional device. 1...Quartz tube, 2...Heater, 3...Support, 3
DESCRIPTION OF SYMBOLS 1... Support rod, 32... Quartz protection tube, 33... Quartz boat, 4... Wafer to be processed, 5, 6... Diffusion plate, 7... Gas nozzle, 10... Quartz tube, 11... Heater, 12
...Gas introduction hole, 13...Support, 14...Buffer plate, 15...Suspender, 16...Beam, 17...Wafer, 18...Heat shield plate.
Claims (1)
に、被処理半導体基板を列設保持するサポートを
挿入し、該熱処理炉に処理用ガスを送りこむよう
にした半導体熱処理装置において、前記サポート
に懸吊したブラケツトに被処理基板を載置するこ
とにより、被処理基板が熱処理炉の下部に偏心し
た位置に装填されるようにしてなる半導体熱処理
装置。 (2) ブラケツトに対し処理用ガス導入側に流入
ガスの流速を制限するバツフア板を、同じくガス
排出側に熱遮蔽板を、それぞれサポートに懸吊し
て配置したことを特徴とする実用新案登録請求の
範囲第(1)項に記載の半導体熱処理装置。 (3) バツフア板が、熱処理炉の内径をほぼ閉塞
する板材に、多数の通気用小孔を設けたものであ
る実用新案登録請求の範囲第(2)項に記載の半導
体熱処理装置。 (4) 熱遮蔽板が、熱処理炉の端部を、適宜の隙
間を残して閉塞する板材である実用新案登録請求
の範囲第(2)項に記載の半導体熱処理装置。[Scope of Claim for Utility Model Registration] (1) Supports for holding semiconductor substrates to be processed are inserted in a heat treatment furnace equipped with a heater on the outer circumferential surface, and processing gas is fed into the heat treatment furnace. A semiconductor heat treatment apparatus, wherein the substrate to be processed is placed on a bracket suspended from the support, so that the substrate to be processed is loaded at an eccentric position at the bottom of a heat treatment furnace. (2) Registration of a utility model characterized in that a buffer plate for restricting the flow rate of inflowing gas is placed on the processing gas inlet side of the bracket, and a heat shield plate is placed on the gas outlet side, each suspended from a support. A semiconductor heat treatment apparatus according to claim (1). (3) The semiconductor heat treatment apparatus according to claim (2), wherein the buffer plate is a plate material that substantially closes the inner diameter of the heat treatment furnace and is provided with a large number of ventilation holes. (4) The semiconductor heat treatment apparatus according to claim 2, wherein the heat shielding plate is a plate material that closes the end of the heat treatment furnace leaving an appropriate gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19110685U JPS62101227U (en) | 1985-12-13 | 1985-12-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19110685U JPS62101227U (en) | 1985-12-13 | 1985-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62101227U true JPS62101227U (en) | 1987-06-27 |
Family
ID=31144943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19110685U Pending JPS62101227U (en) | 1985-12-13 | 1985-12-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62101227U (en) |
-
1985
- 1985-12-13 JP JP19110685U patent/JPS62101227U/ja active Pending
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